At IEDM IMEC presented “MOCVD In[SUB]1-x[/SUB]Ga[SUB]x[/SUB]As high mobility channel for 3-D NAND Memory” authored by E. Capogreco, J. G. Lisoni, A. Arreghini, A. Subirats, B. Kunert, W. Guo, T. Maurice, C.-L. Tan, R. Degraeve, K. De Meyer, G. Van den bosch, and J. Van Houdt.
On December 15[SUP]th[/SUP] I had the opportunity … Read More







Advancing Automotive Memory: Development of an 8nm 128Mb Embedded STT-MRAM with Sub-ppm Reliability