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Highlights of the “Intel Accelerated” Roadmap Presentation

Highlights of the “Intel Accelerated” Roadmap Presentation
by Tom Dillinger on 07-30-2021 at 6:00 am

ribbon FETs

Introduction

Intel recently provided a detailed silicon process and advanced packaging technology roadmap presentation, entitled “Intel Accelerated”.  The roadmap timeline extended out to 2024, with discussions of Intel client, data center, and GPU product releases, and especially, the underlying technologies to be … Read More


Intel Accelerated

Intel Accelerated
by Scotten Jones on 07-27-2021 at 6:00 am

Intel Process Name Decoder

Intel presented yesterday on their plans for process technology and packaging over the next several years. This was the most detailed roadmap Intel has ever laid out. In this write up I will analyze Intel’s process announcement and how they match up with their competitors.

10nm Super Fin (SF)

10nm is now in volume production in three… Read More


WEBINAR: Architecture Exploration of System-on-chip using VisualSim Hybrid RISC-V and ARM Processor library

WEBINAR: Architecture Exploration of System-on-chip using VisualSim Hybrid RISC-V and ARM Processor library
by Daniel Nenni on 07-26-2021 at 6:00 am

Aug5 TechTalk 2

80% of specification optimization and almost 100% of the performance/power trade-offs can be achieved during architecture exploration of product design.  RISC-V offers a huge opportunity with lots of pipeline and instruction set enhancement opportunities.  Can it really attain the utopian success that people are looking… Read More


Magnetic Immunity for Embedded Magnetoresistive RAM (eMRAM)

Magnetic Immunity for Embedded Magnetoresistive RAM (eMRAM)
by Tom Dillinger on 07-22-2021 at 6:00 am

coil interaction

Previous SemiWiki articles have discussed the introduction of embedded Spin-Transfer Torque Magnetoresistive RAM IP from GLOBALFOUNDRIES, as an evolution replacement for non-volatile embedded flash memory. (link, link)

Those articles described the key features of STT-MRAM technology, but didn’t delve into a key reliability… Read More


WEBINAR: Maximizing Exit Valuations for Technology Companies

WEBINAR: Maximizing Exit Valuations for Technology Companies
by Daniel Nenni on 07-21-2021 at 10:00 am

Silicon Catalyst Exit Webinar

I had the opportunity to speak with Pete Rodriguez and Alain Labat in regards to the upcoming webinar on M&A. I have worked with both Pete and Alain in the past so I can tell you personally that this event will be well worth your time. This is truly an all star cast with a collective experience base with billions of dollars worth of … Read More


EDA Flows for 3D Die Integration

EDA Flows for 3D Die Integration
by Tom Dillinger on 07-20-2021 at 6:00 am

future integration

Background

The emergence of 2.5D heterogeneous die integration using a silicon (or organic) interposer has enabled unique system architectures.  The term “More than Moore” has been used to describe the circuit density and cost advantages of leveraging multiple die in the package, the die potentially in different process technologies. … Read More


How can Semiconductor Manufacturers add new Capacity to Meet Demand as Quickly as Possible?

How can Semiconductor Manufacturers add new Capacity to Meet Demand as Quickly as Possible?
by Daniel Nenni on 07-19-2021 at 10:00 am

Aston Webinar

The causes of the chip shortage crisis have been widely discussed, but what about specific solutions? How can semiconductor manufacturers add new capacity to meet demand as quickly as possible?

While there is a lot of talk about investment in building new chip plants, these traditional methods of manufacturing capacity growth… Read More


VLSI Technology Symposium – Imec Alternate 3D NAND Word Line Materials

VLSI Technology Symposium – Imec Alternate 3D NAND Word Line Materials
by Scotten Jones on 07-19-2021 at 6:00 am

T8 1 Arjun Page 08

At the 2021 VLSI Technology Symposium, Imec presented on Ruthenium (Ru) and Molybdenum (Mo) as alternate Word Line (WL) materials for 3D NAND Flash “First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D NAND Memory Devices”. I had an opportunity to interview one of the authors: Maarten Rosmeulen.… Read More


TSMC Design Considerations for Gate-All-Around (GAA) Technology

TSMC Design Considerations for Gate-All-Around (GAA) Technology
by Tom Dillinger on 07-12-2021 at 6:00 am

mobility differences 3

The annual VLSI Symposium provides unique insights into R&D innovations in both circuits and technology.  Indeed, the papers presented are divided into two main tracks – Circuits and Technology.  In addition, the symposium offers workshops, forums, and short courses, providing a breadth of additional information.

At… Read More


VLSI Technology Symposium – Imec Forksheet

VLSI Technology Symposium – Imec Forksheet
by Scotten Jones on 07-06-2021 at 6:00 am

VLSI2021 T2 1 Mertens v2 Page 05

FinFETs devices are reaching their limits for scaling. Horizontal Nanosheets (HNS) are a type of Gate All Around (GAA) device that offers better scaling and performance per unit area. HNS is the logical next step from FinFETs because HNS processing is similar to FinFETs with a limited number of process changes required.

At the … Read More