Of the three types of materials used in microelectronics – i.e., semiconductors, metals, and dielectrics – the first two often get the most attention. Yet, there is a pressing need for a rich variety of dielectric materials in device fabrication and interconnect isolation to satisfy the performance, power, and reliability … Read More
Technology Optimization for Magnetoresistive RAM (STT-MRAM)
Spin-transfer torque magnetoresistive RAM (STT-MRAM) has emerged from several foundries as a very attractive IP option. An introduction to MRAM technology from GLOBALFOUNDRIES was provided in this earlier SemiWiki article. [1]
Briefly, STT-MRAM is a non-volatile storage option with the following attractive characteristics… Read More
Optimization for pFET Nanosheet Devices
The next transition from current FinFET devices at advanced process nodes is the “nanosheet” device, as depicted in the figure below. [1]
The FinFET provides improved gate-to-channel electrostatic control compared to a planar device, where the gate traverses three sides of the fin. The “gate-all-around” characteristics… Read More
A Research Update on Carbon Nanotube Fabrication
It is quite amazing that silicon-based devices have been the foundation of our industry for over 60 years, as it was clear that the initial germanium-based devices would be difficult to integrate at a larger scale. (GaAs devices have also developed a unique microelectronics market segment.) More recently, it is also rather … Read More
3DIC Design, Implementation, and (especially) Test
The introduction of direct die-to-die bonding technology into high volume production has the potential to substantially affect the evolution of the microelectronics industry. The concerns relative to the “end of Moore’s Law”, the diminishing returns of continued (monolithic) CMOS process scaling, and the disruptive effect… Read More
Advanced Process Development is Much More than just Litho
The vast majority of the attention given to the introduction of each new advanced process node focuses on lithographic updates. The common metrics quoted are the transistors per mm**2 or the (high-density) SRAM bit cell area. Alternatively, detailed decomposition analysis may be applied using transmission electron microscopy… Read More
Design Considerations for 3DICs
The introduction of heterogeneous 3DIC packaging technology offers the opportunity for significant increases in circuit density and performance, with corresponding reductions in package footprint. Yet, the implementation of a complex 3DIC product requires a considerable investment in methodology development for all… Read More
How Intel Stumbled: A Perspective from the Trenches
Bloomberg did an interview with my favorite semiconductor analyst Stacy Rasgon on “How the Number One U.S. Semiconductor Company Stumbled” that I found interesting. Coupled with the Q&A Bob Swan did at the Credit Suisse Annual Technology Conference I thought it would be good content for a viral blog.
No Intel and Samsung are not passing TSMC
Seeking Alpha just published an article about Intel and Samsung passing TSMC for process leadership. The Intel part seems to be a theme with them, they have talked in the past about how Intel does bigger density improvements with each generation than the foundries but forget that the foundries are doing 5 nodes in the time it takes… Read More
Webinar: 5 Reasons Why Others are Adopting Hybrid Cloud and EDA Should Too!
With the complexity of transistors at an all time high and growing foundry rule decks, fabless companies consistently find themselves in a game of catch up. Semiconductor designs require additional compute resources to maintain speed and quality of development. But deploying new infrastructures at this current speed is a tall… Read More
Flynn Was Right: How a 2003 Warning Foretold Today’s Architectural Pivot