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Spot Pairs for Measurement of Secondary Electron Blur in EUV and E-beam Resists

Spot Pairs for Measurement of Secondary Electron Blur in EUV and E-beam Resists
by Fred Chen on 08-14-2022 at 8:00 am

Spot Pairs for Measurement of Secondary Electron Blur in EUV

There is growing awareness that EUV lithography is actually an imaging technique that heavily depends on the distribution of secondary electrons in the resist layer [1-5]. The stochastic aspects should be traced not only to the discrete number of photons absorbed but also the electrons that are subsequently released. The electron… Read More


EUV’s Pupil Fill and Resist Limitations at 3nm

EUV’s Pupil Fill and Resist Limitations at 3nm
by Fred Chen on 08-08-2022 at 10:00 am

EUV Pupil Fill and Resist Limitations at 3nm p1

The 3nm node is projected to feature around a 22 nm metal pitch [1,2]. This poses some new challenges for the use of EUV lithography. Some challenges are different for the 0.33NA vs. 0.55NA systems.

0.33 NA

For 0.33 NA systems, 22 nm pitch can only be supported by illumination filling 4% of the pupil, well below the 20% lower limit for

Read More

ASML- US Seeks to Halt DUV China Sales

ASML- US Seeks to Halt DUV China Sales
by Robert Maire on 07-10-2022 at 6:00 am

China Semiocnductor Ban DUV EUV

-If you can’t beat them, embargo them
-It has been reported US wants ASML to halt China DUV tools
-US obviously wants to kill, not just wound China chip biz
-Is this embargo the alternative to failed CHIPS act?
-Hard to say “do as I say, not as I do”- but US does anyway

First EUV ban now DUV ban? Are process & yieldRead More


ASML EUV Update at SPIE

ASML EUV Update at SPIE
by Scotten Jones on 06-24-2022 at 6:00 am

12051 4 SPIE2022 Smeets 0.33 NA EUV systems for High Volume Manufacturing Page 07

At the 2022 SPIE Advanced Lithography Conference, ASML presented an update on EUV. I recently had a chance to go over the presentations with Mike Lercel of ASML. The following is a summary of our discussions.

0.33 NA

The 0.33 NA EUV systems are the production workhorse systems for leading edge lithography today. 0.33 NA systems are… Read More


Obscuration-Induced Pitch Incompatibilities in High-NA EUV Lithography

Obscuration-Induced Pitch Incompatibilities in High-NA EUV Lithography
by Fred Chen on 06-19-2022 at 10:00 am

High NA EUV Lithography 1

The next generation of EUV lithography systems are based on a numerical aperture (NA) of 0.55, a 67% increase from the current value of 0.33. It targets being able to print 16 nm pitch [1]. The High-NA systems are already expected to face complications from four issues: (1) reduced depth-of-focus requires thinner resists, which… Read More


The Electron Spread Function in EUV Lithography

The Electron Spread Function in EUV Lithography
by Fred Chen on 06-07-2022 at 6:00 am

Electron Spread EUV

To the general public, EUV lithography’s resolution can be traced back to its short wavelengths (13.2-13.8 nm), but the true printed resolution has always been affected by the stochastic behavior of the electrons released by EUV absorption [1-5].

A 0.33 NA EUV system is expected to have a diffraction-limited point spread… Read More


Double Diffraction in EUV Masks: Seeing Through The Illusion of Symmetry

Double Diffraction in EUV Masks: Seeing Through The Illusion of Symmetry
by Fred Chen on 05-22-2022 at 7:00 am

Double Diffraction in EUV Masks

At this year’s SPIE Advanced Lithography conference, changes to EUV masks were particularly highlighted, as a better understanding of their behavior is becoming clear. It’s now confirmed that a seemingly symmetric EUV mask absorber pattern does not produce a symmetric image at the wafer, as a conventional DUV … Read More


Demonstration of Dose-Driven Photoelectron Spread in EUV Resists

Demonstration of Dose-Driven Photoelectron Spread in EUV Resists
by Fred Chen on 05-08-2022 at 10:00 am

Demonstration of Dose Driven Photoelectron Spread in EUV Resists

As a consequence of having a ~13.5 nm wavelength, EUV photons transfer ~90% of their energy to ionized photoelectrons. Thus, EUV lithography is fundamentally mostly EUV photoelectron lithography. The actual resolution becomes dependent on photoelectron trajectories.

Photoelectron trajectories in EUV lithography were… Read More


Adding Random Secondary Electron Generation to Photon Shot Noise: Compounding EUV Stochastic Edge Roughness

Adding Random Secondary Electron Generation to Photon Shot Noise: Compounding EUV Stochastic Edge Roughness
by Fred Chen on 04-26-2022 at 6:00 am

Compounding EUV Stochastic Edge Roughness 2

The list of possible stochastic patterning issues for EUV lithography keeps growing longer: CD variation, edge roughness, placement error, defects [1]. The origins of stochastic behavior are now well-known. For a given EUV photon flux into the resist, a limited fraction are absorbed. Since the absorption is less than 5% affected… Read More


Intel and the EUV Shortage

Intel and the EUV Shortage
by Scotten Jones on 04-13-2022 at 10:00 am

Slide1

In my “The EUV Divide and Intel Foundry Services” article available here, I discussed the looming EUV shortage. Two days ago, Intel announced their first EUV tool installed at their new Fab 34 in Ireland is a tool they moved from Oregon. This is another indication of the scarcity of EUV tools.

I have been tracking EUV system production… Read More