The annual International Electron Devices Meeting (IEDM) took place last month. One of the presentations on the short course was by Matthew Metz of Intel titled New Materials Systems for Moore’s Law Continuation. In essence this was a look at some of the possibilities for what comes after silicon runs out of steam.
Matthew started… Read More
With the announcement of early PDK availability for the 3nm GAA process node, designers are extremely interested in the characteristics of the new “gate-all-around” transistor structure and how it compares to the existing FinFET device. The GAA transistor has been denoted as a (horizontal) nanowire or nanosheet.
I will talk… Read More
