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Deep thinking on compute-in-memory in AI inference

Deep thinking on compute-in-memory in AI inference
by Don Dingee on 03-09-2023 at 6:00 am

Compute-in-memory for AI inference uses an analog matrix to instantaneously multiply an incoming data word

Neural network models are advancing rapidly and becoming more complex. Application developers using these new models need faster AI inference but typically can’t afford more power, space, or cooling. Researchers have put forth various strategies in efforts to wring out more performance from AI inference architectures, most notably placing parallelized execution and memory resources closer together. Compute-in-memory takes memory locality to the extreme by combining memory accesses and execution in a single operation – however, it comes with the risks and complexity of analog design and fabrication. Expedera’s new white paper examines compute-in-memory in AI inference and explores the tradeoffs versus its all-digital compute-near-memory solution optimizing all neural network processing elements.

Motivation for compute-in-memory technology

What’s the most expensive operation for a CPU? Moving data. It keeps operations from running and forms nasty bottlenecks if too much flows simultaneously. Manycore solutions like GPUs help multiplier performance but don’t eliminate the data movement penalties. Neither CPUs nor GPUs are efficient for AI inference, opening a door for the NPU (neural processing unit), seeking balance for efficient parallel execution with effective data access.

Instead of placing execution cores over here, a pile of memory over there, and a bus in between, one path to faster data access is locality – for which three basic strategies exist:

  • Compute-near-memory spreads smaller blocks of memory nearby blocks of execution units but not necessarily partitioned in a one-to-one relationship.
  • Compute-at-memory tightly couples an execution unit with its supporting memory, forming a co-processor unit that can be stepped and replicated for scale.
  • Compute-in-memory changes the memory structure by physically embedding a multiplier unit in a customized unit, so a memory read fetches a pre-multiplied result.

Saying compute-in-memory “changes the structure” may be understated. Both compute-near-memory and compute-at-memory use a conventional digital multiplier. Compute-in-memory relies on an incoming digital word triggering analog technology for multiplication and current summing. An analog-to-digital converter is required to get the result back to digital.

 

 

 

 

 

 

Conceptually, the neural network weight coefficients stay put in a compute-in-memory scheme and are always at hand for rapid multiplication with the data of interest. Cutting out data movements and streamlining operations trims AI inference time, and fewer transistors in action can mean lower power consumption. Those are good outcomes, right?

Throughput is only one factor for compute-in-memory in AI inference

Unsurprisingly, some tradeoffs arise. Some issues are inherent to the compute-in-memory structure, and some relate to the overall design and fabrication cycle.

A significant advantage of digital circuitry is noise immunity. Moving operations back into analog reintroduces noise factors and analog variation that limit realizable bit precision; researchers seem confident in 4-bit implementations. Lower AI inference precision raises demands on AI training, with more cycles required for reliable inference. Achieving higher precision, say int8, also introduces problems. The analog transistor array becomes much more complex, as does the analog-to-digital converter needed. Area and power consumption savings are offset, and the chance for bit errors rises as analog step width shrinks.

It’s certainly possible to size, interconnect, and optimize a compute-in-memory array for a particular inference model or group of similar complexity models. But, as we’ve discussed elsewhere, that removes flexibility, and the risk grows if a different model is needed. Other hits on flexibility are locking into specific, transistor-level modifications in a selected memory technology, and placement and routing constraints may appear at the system-on-chip level.

Moving into analog also means moving into a mixed-signal foundry process. Advanced nodes may be entirely off the table for some time. It also means analog expertise and tools are required, and it is difficult to scale layouts with analog circuitry.

Achieving better performance gains in all-digital NPU IP

Substantial engineering effort is often necessary to wring the last percentage points of performance out of an application unless conditions align perfectly where a bit more is possible. Use cases for compute-in-memory in AI inference will probably look like this:

  • Models with large numbers of weight coefficients, fully connected layers, and sparse activations
  • Int4 precisions where extended AI training is feasible and analog noise immunity is better
  • Scale compatible with mature mixed-signal process technology and wafer costs

Still, we’re not talking about something like a 4x performance gain with compute-in-memory compared to all-digital NPU IP. Remember that compute-in-memory is only one small part of a complete NPU solution, and performance improvements are available at other points around the core multiply operation. But are they worth the risks and costs of the analog environment?

Expedera’s value proposition is straightforward. Using high-efficiency all-digital NPU IP, combining scalable hardware with packet-based sequencing directed by compiler software, Expedera teams working with OEMs deliver better performance gains in a complete AI inference solution. As Expedera’s IP evolves and process technology advances, it gets faster, smaller, and more power efficient, and it can be customized for OEM requirements.

Compute-in-memory and Expedera NPU IP are independent of each other – both will exist in the market once compute-in-memory gains more adoption. There’s more to read about both approaches in the full Expedera white paper; simple registration gets a download.

Architectural Considerations for Compute-in-Memory in AI Inference

Also Read:

Deep thinking on compute-in-memory in AI inference

Area-optimized AI inference for cost-sensitive applications

Ultra-efficient heterogeneous SoCs for Level 5 self-driving

CEO Interview: Da Chuang of Expedera


DSP Innovation Promises to Boost Virtual RAN Efficiency

DSP Innovation Promises to Boost Virtual RAN Efficiency
by Bernard Murphy on 03-08-2023 at 6:00 am

DSP multi threading min

5G is already real, though some of us are wondering why our phone connections aren’t faster. That perspective misses the real intent of 5G – to extend high throughput (and low latency) communication to a vast number and variety of edge devices beyond our phones. One notable application is Fixed Wireless Access (FWA), promising to replace fiber with wireless broadband for last mile connectivity. Consumers are already cutting their (phone) landlines; with FWA they may also be able to cut their cable connections. Businesses can take this further, installing FWA base stations around factories, offices, hospitals, etc., to support many more smart devices in the enterprise.

An essential business requirement to enable this level of scale-out is much more cost-effective wireless network infrastructure. Open Radio Access Network (Open RAN) and virtualized RAN (vRAN) are two complementary efforts to support this objective. Open RAN standardizes interfaces across the network, encouraging competition between network component suppliers. vRAN improves throughput within a component by more efficiently exploiting a fixed hardware resource for multiple independent channels. We know how to do this with standard multi-core processor platforms, through dispatching tasks to separate cores or through multi-threading. Important functions in the RAN now run on DSPs, which also support multi-core but not multi-threading. Is DSP innovation possible to overcome this drawback?

What’s the solution?

Existing RAN infrastructure components – specifically processors used in baseband and backhaul– support virtualization / multithreading and are well established for 4G and early 5G. Surely network operators should stick to tried-and-true solutions for Open RAN and vRAN?

Unfortunately, existing components are not going to work as well for the scale-out we need for full 5G. They are expensive, power hungry (hurting operating cost), competition in components is very limited, and these devices are not optimized for the signal processing aspects of the RAN. Operators and equipment makers have enthusiastically switched to DSP-based ASICs to overcome those issues, especially as they get closer to the radio interface and user equipment, where the RAN must offer massive MIMO support.

A better solution would be to continue to leverage the demonstrated advantages of DSP-based platforms, where appropriate, while innovating to manage increasing high-volume traffic more efficiently in a fixed DSP footprint.

Higher throughput, less DSPs

Multi-core DSP system are already available. But any one of those DSP cores is handling just one channel at a time. A more efficient solution would also allow for multi-threading within a core. Commonly, it is possible to split a core to handle two or more channels at one time, but this fixed threading is a static assignment. What limits more flexibility is the vector compute unit (VCU) in each DSP core. VCUs are major differentiators between DSPs and general-purpose CPUs, handling all the signal-intensive computation – beamforming, FFT, channel aggregation and much more – in the RAN processing path between infrastructure and edge devices. VCUs consume significant footprint in DSP cores, an important consideration in multi-core systems during times when software is executing scalar operations and the VCU must idle.

Utilization can be improved significantly through the dynamic vector threading architecture illustrated in the figure above. Within one DSP core, two scalar processors support 2 channels in parallel; this does not add significantly to the footprint. The VCU is common to both processors and provides vector compute functions and a vector register file for each channel. So far this looks like the static split solution described earlier. However, when only one channel needs vector computation at a given time, that calculation can span across both compute units and register files, doubling throughput for that channel. This is dynamic vector threading, allowing two channels to use vector resource in parallel when needed, or allowing one channel to process a double-wide vector with higher effective throughput when vector need on the other channel is inactive. Naturally the solution can be extended to more than two threads with obvious hardware extensions.

Bottom line, such a system can both process with multiple cores and dynamically multi-thread vector compute within each core. At absolute peak load the system will still deliver effective throughput. During more common sub-peak loads it will deliver higher throughput for a fixed number of cores than a traditional multi-core system. Network operators, businesses and consumers will be able to get more out of installed hardware for longer, before needing to upgrade.

Talk to CEVA

CEVA have been working for many years with the big names in infrastructure hardware, consumer and business edge products. They tell me they have been actively guided by those customers towards this vector multi-threading capability, suggesting dynamic vector threading is likely to debut in products within the next few years. You can learn more about CEVA’s XC-20 family architecture offering dynamic vector threading HERE.


Multi-Die Systems Key to Next Wave of Systems Innovations

Multi-Die Systems Key to Next Wave of Systems Innovations
by Kalar Rajendiran on 03-07-2023 at 10:00 am

Shift to Multi Die Systems is Happening Now

These days, the term chiplets is referenced everywhere you look, in anything you read and in whatever you hear. Rightly so because the chiplets or die integration wave is taking off. Generally speaking, the tipping point that kicked off the move happened around the 16nm process technology when large monolithic SoCs started facing yield issues. This obviously translated to an economic issue and highlighted the fact that Moore’s Law benefit which had stood the test of time for more than five decades had started to flatten. While this is certainly true, there are lot more benefits for moving to chiplets-based designs. This “More than Moore” aspect is what will drive the chiplets adoption even faster.

I recently had a conversation on this topic, with Shekhar Kapoor, senior product line director at Synopsys. Shekhar shared Synopsys’ view on what is behind the move to multi-die systems , the challenges to overcome and the solutions that are needed to successfully support this wave.

More Than Just The Yield Benefit

Multi-die systems can accelerate the scaling of system functionality and performance. They can help lower system power consumption while increasing throughput. By allowing re-use of proven designs/dies as part of  a system implementation, they help reduce product risk and time-to-market. And, they help create new product variants rapidly and enable strategic development and management of a company’s product portfolio.

“SysMoore Era” Calls for Multi-Die Systems

Until recent years, Moore’s Law benefits delivered at the chip level translated well to satisfy the performance demands of systems. But as Moore’s Law benefits started to slow down, system performance demands have started to grow in leaps and bounds. Systems have been hitting the processing, memory and connectivity walls. Synopsys has coined the term “SysMoore Era” to refer to the future.

Take for example, the tremendous growth in artificial intelligence (AI) driven systems and advances in deep learning neural network models. The compute demand on systems have been growing at incredible rates every couple of years. As an extreme example, OpenAI’s ChatGPT application is powered by a Generative Pre-trained Transformer (GPT) model with 175 billion parameters. That is the current version (GPT3) and the next version (GPT4) is supposed to handle 100 trillion parameters. Just imagine the compute demand of such a system.

On average, the Transformer models have been growing in complexity by 750x over a two-year period and systems are hitting the processing wall. Domain Specific Architectures are being adopted to close the gap on performance demand. Multi-die systems are becoming essential to address the system demands of the “SysMoore Era.”

Multi-Die System Challenges

Heterogeneous die integration introduces a number of challenges. Die-to-die connectivity is at the heart of multi-die systems as different components need to properly communicate with each other. System pathfinding is a closely related challenge that involves determining the best data path between components in the system. Multi-die systems must be designed to also ensure that each component is supplied with adequate power and cooling, while also minimizing system level power consumption. Memory utilization and coherency are also important challenges as these systems must be designed to ensure efficient memory utilization and coherency across the different components. Software development and validation at the system level is yet another challenge as each component may have its own software stack. Design implementation has to be done for efficient die/package co-design with system signoff as the goal. And all this should be accomplished with cost-effective manufacturability and long-term reliability in mind.

Multi-Die System Solutions

Just as Design Technology Co-Optimization (DTCO) is very important in a monolithic SoC scenario, System Technology Co-Optimization (STCO) is imperative in a multi-die system scenario. To address multi-die system challenges, the solutions can be broadly categorized into the following areas of focus.

Architecture Exploration

A system level tool that allows early exploration and system partitioning for optimizing thermal, power and performance is imperative. Just as a chip-level platform architect tool was critical for a monolithic SoC scenario, so is a system-level platform architect tool for a multi-die system, if not more critical.

Software Development and Validation

High-capacity emulation and prototyping solutions are essential to support rapid software development and validation for the various components of a multi-die system.

Design Implementation

Access to robust and secure die-to-die IP and a unified exploration-to-signoff platform are key to an effective and efficient die/package co-design of the various components of a multi-die system.

Manufacturing & Reliability

Multi-die system hierarchical test, diagnostics and repair and holistic test capabilities are essential for manufacturability and long-term system reliability. Environmental, structural and functional monitoring are needed to enhance the operational metrics of a multi-die system. The solution comprises silicon IP, EDA software and analytics insights for the In-Design, In-Ramp, In-Production and In-Field phases of the product lifecycle.

Summary

As a leader in “Silicon to Software” solutions to enable system innovations, Synopsys offers a complete solution to design, manufacture and deploy multi-die systems. For solution-specific details, refer to their multi-die system page.

Also Read:

PCIe 6.0: Challenges of Achieving 64GT/s with PAM4 in Lossy, HVM Channels

Synopsys Design Space Optimization Hits a Milestone

Webinar: Achieving Consistent RTL Power Accuracy


Calibre IC Manufacturing papers at SPIE 2023

Calibre IC Manufacturing papers at SPIE 2023
by Daniel Nenni on 03-07-2023 at 6:00 am

SPIE 2023 San Jose

The Siemens Calibre group was very busy last week at SPIE. Calling Calibre industry leading really is an understatement. Calibre is one of the reasons Moore’s Law has continued to this day. This tool is legendary. You can get more information on the Calibre landing page including product information, resource guide, blogs and much more:

Design with Calibre

The industry-leading Calibre toolsuite provides physical verification (DRC), circuit verification (LVS, PEX), and reliability verification (PERC), as well as Calibre DFM optimization, to ensure IC designs will deliver the power, performance, and foundry yield today’s markets demand. Across all process nodes and design styles, innovative functionality ensures the Calibre toolsuite provides accurate, efficient, comprehensive IC verification while minimizing resources and tapeout schedules.

SPIE Advanced Lithography + Patterning

SPIE is the international society for optics and photonics. We bring engineers, scientists, students, and business professionals together to advance light-based science and technology.

In case you missed SPIE or you missed some of the Calibre papers here they are. If you would like us to dig deeper on any one of them let me know, fascinating stuff, absolutely:

Join Calibre IC Manufacturing at SPIE Advanced Lithography 2023, Feb 26 – March 3, 2023, at the San Jose Convention Center. Siemens will be presenting 16 papers. (All presentations listed in Pacific Time.)

27 February 2023

27 February 2023 • 10:50 AM – 11:10 AM
Structured assist features in inverse lithography
Paper 12495-2

27 February 2023 • 4:20 PM – 4:40 PM
Resolution enhancement techniques @0.55 NA EUV applied for 6th generation of 10nm DRAM Joint paper of IMEC and Siemens EDA
Paper 12495-9

28 February 2023

28 February 2023 • 1:40 PM – 2:10 PM
Extending design technology co-optimization from technology launch to HVM (Keynote Presentation)
Paper 12495-14

28 February 2023 • 3:40 PM – 4:10 PM
EUV Full-chip curvilinear mask options for logic via and metal patterning (Invited Paper)
Paper 12495-18

1 March 2023

1 March 2023 • 10:30 AM – 10:50 AM
Stochastic aware EUV OPC on random logic via Joint paper of IMEC and Siemens EDA
Paper 12494-26

1 March 2023 • 10:50 AM – 11:10 AM
A ML based OPC model pattern down-selection method with mask and wafer contours
Paper 12499-17

1 March 2023 • 1:20 PM – 1:40 PM
IC layouts patterns topological profiling using directional geometrical kernels Joint paper of Ain Shams University and Siemens EDA
Paper 12495-29

1 March 2023 • 5:30 PM – 7:00 PM
CPU time prediction using machine learning for post-tapeout flow runs (PTOF)
Paper 12495-64

1 March 2023 • 5:30 PM – 7:00 PM
Design-aware virtual metrology and process recipe recommendation Joint paper of GlobalFoundries and Siemens EDA
Paper 12495-75

1 March 2023 • 5:30 PM – 7:00 PM
Impact of mask rule constraints on ideal SRAF placement
Paper 12494-54

1 March 2023 • 5:30 PM – 7:00 PM
EUV SRAFs printing modeling and verification in 2D hole array Joint paper of IMEC and Siemens EDA
Paper 12494-61

1 March 2023 • 5:30 PM – 7:00 PM
Design rule manual and DRC code qualification flows empowered by high coverage synthetic layouts generation Joint paper of SAMSUNG Electronics and Siemens EDA
Paper 12495-72

1 March 2023 • 5:30 PM – 7:00 PM
Application of Gaussian Random Field EUV stochastic model to quantification of stochastic variability of EUV vias Joint paper of IMEC and Siemens EDA
Paper 12494-67

1 March 2023 • 5:30 PM – 7:00 PM
AI-guided reliability diagnosis for 5,7nm automotive process Joint paper of SAMSUNG Electronics and Siemens EDA
Paper 12496-142

1 March 2023 • 5:30 PM – 7:00 PM
Hybrid deep learning OPC framework with generative adversarial network Joint paper of Institute of Microelectronics, Beijing Superstring Academy of Memory Technology, and Siemens EDA
Paper 12495-69

2 March 2023

2 March 2023 • 8:00 AM – 8:30 AM
Novel approach to solving systematic pattern yield limiters with volume scan diagnosis (Invited Paper) Joint paper of PDF Solutions and Siemens EDA
Paper 12495-39

2 March 2023 • 11:00 AM – 11:20 AM
Unsupervised ML classification driven process model coverage check Joint paper of SAMSUNG Electronics and Siemens EDA
Paper 12495-44

Also Read:

The State of FPGA Functional Verification

Interconnect Choices for 2.5D and 3D IC Designs

The State of IC and ASIC Functional Verification


Report from SPIE- EUV’s next 15 years- AMAT “Sculpta” braggadocio rollout

Report from SPIE- EUV’s next 15 years- AMAT “Sculpta” braggadocio rollout
by Robert Maire on 03-06-2023 at 10:00 am

EUV DUV Lithography

-We attended the SPIE lithography Conference in San Jose
-No significant news or announcements on EUV
-Focus on 500WPM target and High & Hyper NA rollout
-AMAT overblown Sculpta-Not exactly what its cracked up to be

SPIE Lithography 2023

We have been attending SPIE for many years now and are happy to see a return to pre Covid levels with more people traveling from Asia than we had seen in a while.

However we did not see as many presentations from TSMC as there had been in past years when their presentations made headlines and riled he EUV community with their market leading news about EUV.

The conference continues to be a broad discussion of the entire lithography infrastructure which obviously revolves around EUV. Relatively few discussions about power and progress as EUV is obviously very commonplace and widely accepted. Delivery times and availability are the most common questions.

Martin Van Den Brink great presentation- the conference highlight

We thought the highlight of the conference was the keynote, opening presentation, by Martin van den Brink the long time CTO of ASML and life force behind EUV.

We had met him many years ago, in 1995, when we worked on ASML’s IPO when ASML was a distant third behind the powerhouses of Nikon and Canon. It is a prime example of persistence.

Martin spoke of the past 15 years and the next 15 years of EUV and where we are going and what ASML’s targets are.

Although there is a huge amount of work to be done to get to high NA EUV it is not nearly the same effort required as the original rollout of EUV. In his presentation he showed that there is significant reuse of existing EUV technology such that high NA will be more evolutionary than revolutionary. Obviously, some key components, such as lenses will be completely new but there is more engineering to be done and less pioneering.

He also spoke about a 1000 watt target power which seems so much more attainable now than previous power improvements. He made a few self effacing jokes about his prior power timeline estimates which were slightly off (which we well remember) and drew some laughs from the audience.

Part of the reason to get to 1000 watts is to get to 500 wafers per hour and importantly not just in EUV but DUV as well. ASML clearly understands the concern about price/productivity which is especially focused on high priced litho tools.

The productivity focus on DUV is well deserved in our view as it remains the workhorse of litho.

Productivity is the key element in ASML’s pricing strategy. Improved throughput is the value justification for higher pricing. ASML has long used this sort of “value” based pricing and the way to support increased pricing is to increase wafers per hour.

We could joke that a one wafer per hour increase in productivity equates to a million dollars in additional pricing and we may not be that far off….

The rest of Martin’s presentation was a firehose of excellent information and facts and figures which went by too fast to fully sink in….but worth a slower replay.

One of the key data points was 100KW (100 thousand watts) of power required per wafer processed through litho tools. This is an astounding number and its not just the laser power its also the power to accelerate and decelerate huge blocks of granite stages ever faster, at blinding speeds, as throughput increases.

We have pointed to power requirements of fabs before as an increasing issue. This is why Samsung is building its own power generation in Texas as it can’t use the unreliable grid there. Another interesting factoid, not mentioned by Martin, is that TSMC consumes roughly 10% of the entire island of Taiwan’s power grid for its fabs!

The keynote is well worth a replay or two……

AMAT’s “Sculpta”- Mea Culpa of braggadicio

Applied Materials did a lot of “stretching reality” in its rollout of its new Sculpta tool at SPIE.

First off, calling it “pattern shaping” is a bit of a stretch as we could just as easily call all existing etch and deposition “pattern shaping” as they both shape existing patterns by adding or subtracting materials.

It would be much more accurate and truthful to call it “selective etch” which is what it really is but perhaps AMAT thought it a bit too pedestrian and want to get in on the “litho luster” that they are missing.

The Sculpta selective etch is basically sidewall etch that removes material from a specific side of a feature to shorten it.

Selective etch is also neither new nor unique as suggested in the rollout. The technology described is quite similar to Tokyo Electron’s GCIB (gas cluster ion beam) technology from their Epion division thats has been around for many, many years whose key product is “Ultratrimmer” which does the same thing as AMATs Scuplta , that is “trimming” of features. The main difference we can see is directing the trim at an angle to hit the sidewall of a feature. There are also other ion beam type etch and deposition systems in the world.

To also suggest that Scuplta is a replacement for double patterning EUV is also a stretch as it only serves as a replacement in certain circumstances and far from all. So to suggest this will have some sort of significant impact, like eliminating double patterning, or EUV usage is also a long stretch.

This is just another etch tool in the arsenal of many different etch tools, it is NOT a patterning tool. It is not as enabling as Lam’s high aspect ratio etcher which enables stacked NAND. It is an alternate, apparently cheaper, way of producing features which are already produced today by a more complex method. It is certainly not an EUV replacement, just another etcher that etches what EUV prints.

It will take significant time for the industry to adopt it, if they do, so we don’t see any near term impact on valuation.

The general sense I got from talking to many participants at SPIE was “why are they announcing at etch tool at SPIE?”. Others just yawned. Not exactly a “breakthrough in patterning technology”, just more marketing hyperbole.

Announcing a truly competitive new reticle inspection tool or dry resist tool would have been much more appropriate at SPIE

The stocks

The negative reaction on ASML’s stock was an overreaction to overblown marketing hype.

Applied is trying to steal the thunder of a growing, strong and not slowing litho market dominated by ASML instead of being part of the currently shrinking deposition and etch markets that AMAT is in. By relabeling a selective etch tool as a “patterning” tool there is hope to get some of the litho luster they lack.

But being just another etch tool doesn’t help the stock as much. We don’t see significant near term impact on anyone from SPIE and certainly not Applied.

We still remain very cautious on the group as the semiconductor market remains oversupplied and we have yet to see a real bottom. Those who suggest we have seen a bottom have instead seen a mirage.

We continue to look for real signs of a turn especially in the still falling memory market.

About Semiconductor Advisors LLC
Semiconductor Advisors is an RIA (a Registered Investment Advisor),
specializing in technology companies with particular emphasis on semiconductor and semiconductor equipment companies. We have been covering the space longer and been involved with more transactions than any other financial professional in the space. We provide research, consulting and advisory services on strategic and financial matters to both industry participants as well as investors. We offer expert, intelligent, balanced research and advice. Our opinions are very direct and honest and offer an unbiased view as compared to other sources.

Also Read:

KLAC- Weak Guide-2023 will “drift down”-Not just memory weak, China & logic too

Hynix historic loss confirms memory meltdown-getting worse – AMD a bright spot

Samsung- full capex speed ahead, damn the downturn- Has Micron in its crosshairs

Lam chops guidance, outlook, headcount- an ugly, long downturn- memory plunges


Semiconductors and Mobile Communications: 5G and Beyond

Semiconductors and Mobile Communications: 5G and Beyond
by Kalar Rajendiran on 03-06-2023 at 6:00 am

RF Front End Increasing in Complexity

Mobile World Congress (MWC) is the world’s largest gathering of mobile industry innovators where one can hear the latest on advanced technologies and solutions. This year, it took place from February 27 through March 2. Soitec was there to share their insights on how mobile communications are going to evolve with 5G and beyond and showcase their innovative solutions. The company highlighted the critical role semiconductors will play to deliver on the full promise of 5G and beyond and corresponding silicon opportunities. It also demonstrated its commitment to sustainability by showcasing a number of initiatives it has implemented to reduce its environmental footprint.

5G Transforming the World

As the technology world continues to advance, 5G is quickly transforming the way we think, work, and interact. 5G is creating a new era of connectivity and enabling us to experience faster, more reliable networks and data speeds. It has significantly increased the demand for reliable, high-performance RF Front End (RFFE) solutions.

RF at the Heart of 5G Mobile

RFFE circuitry is what processes the radio frequency signals in a mobile device. It is responsible for transmission and reception of signals, amplification of signals, and noise reduction. In other words, it is the heart of mobile communications and is essential for providing seamless connectivity. With every new generation of mobile connectivity, the demand for higher speeds, wider bandwidths and better performance has been increasing. 5G will be the key engine powering our connected society through the end of this decade, in a wide range of markets. Public and private 5G networks, fixed wireless access (FWA), smart transportation, non-terrestrial networks, massive IoT, and XR (VR/AR/MR) are markets to name a few. The RFFE circuitry has increased in complexity over the generations and will continue to increase in complexity as 3GPP’s new releases for 5G are announced. The main challenges for 5G RFFE for mobiles are high-speed communications, long battery life and circuity footprint optimization.

About Soitec

Soitec is a world leader in designing and manufacturing innovative semiconductor materials. Its strategy is to produce engineered substrates to address the different segments of the semiconductor value chain. By combining physical properties such as current, wave and light, engineered substrates create value at the system level in terms of high data rates, power efficiency and sensing accuracy. By supporting foundries, design houses and fabless semiconductor companies, Soitec stands at a $1B in revenue as of FY2022. With about 10% of its revenue dedicated to R&D, Soitec files about 300 patents each year. Over the next three years, Soitec will be increasing its global fab capacity to about 4.5 millions wafers a year.

The top end markets supported by Soitec are mobile communications, automotive & industrial and smart devices. Soitec’s comprehensive portfolio of engineered substrates are of course geared to support the mobile connect, automotive & industrial and smart devices markets. The following chart shows Soitec’s broad product portfolio.

Soitec’s Unique Position

Soitec’s RF-SOI has already become a standard for implementing front-end modules in smartphones. Its RF-SOI, FD-SOI, Piezo-on-insulator (POI) and Gallium Nitride (GaN) technologies are specifically designed to address the challenges of 5G RFFE.

Together, the RF-SOI and FD-SOI solutions will enable high-performance 5G RFFE at reduced power consumption and lowest cost. The POI technology from Soitec enables implementation of high-performance 5G filters to support a wide range of upcoming 5G applications in the sub-6GHz spectrum. The GaN technology is designed to enable extremely high-speed and low-power solutions for 5G RFFE.

The following chart highlights the semiconductor opportunity for Soitec’s above mentioned technologies in high-end smartphones over the next four years.

Summary

With its broad range of technologies and solutions, Soitec is helping to push the boundaries of mobile technology and make it easier and more cost-effective for manufacturers to produce high-quality, reliable devices. By addressing the complexity of the 5G RFFE, Soitec’s RF-SOI, FD-SOI, POI and RF GaN solutions will enable customers to quickly and reliably deploy their 5G applications.

Contact Soitec to learn more about how it is helping end-customers derive the full benefits of 5G and Beyond in a more sustainable manner.

About Soitec

Soitec (Euronext, Tech 40 Paris) is a world leader in designing and manufacturing innovative semiconductor materials. The company uses its unique technologies and semiconductor expertise to serve the electronics markets. With more than 3,500 patents worldwide, Soitec’s strategy is based on disruptive innovation to answer its customers’ needs for high performance, energy efficiency and cost competitiveness. Soitec has manufacturing facilities, R&D centers and offices in Europe, the U.S. and Asia. Fully committed to sustainable development, Soitec adopted in 2021 its corporate purpose to reflect its engagements: “We are the innovative soil from which smart and energy efficient electronics grow into amazing and sustainable life experiences.”

Also Read:

3DIC Physical Verification, Siemens EDA and TSMC

Advances in Physical Verification and Thermal Modeling of 3DICs

Samsung- full capex speed ahead, damn the downturn- Has Micron in its crosshairs


Podcast EP146: How Rapid Silicon Will Change Innovation with Naveed Sherwani

Podcast EP146: How Rapid Silicon Will Change Innovation with Naveed Sherwani
by Daniel Nenni on 03-03-2023 at 10:00 am

Dan is joined by Dr. Naveed Sherwani, a well-known semiconductor industry veteran with over 35 years of entrepreneurial, engineering, and management experience. He is widely recognized as an innovator and leader in the field of design automation of ASICs and microprocessors. Naveed now serves as CEO of Rapid Silicon, aiming to drive the next wave of innovation by using the open source to disrupt the FPGA industry.

Dan explores the mission of Rapid Silicon with Naveed and how domain-specific FGPAs will change the innovation landscape going forward. Custom RISC-V architectures, edge computing expansion and IoT are a few of the areas explored in this far-reaching and informative discussion.

The views, thoughts, and opinions expressed in these podcasts belong solely to the speaker, and not to the speaker’s employer, organization, committee or any other group or individual.


The Billion Dollar Question – Single or Double Digit Semiconductor Decline

The Billion Dollar Question – Single or Double Digit Semiconductor Decline
by Malcolm Penn on 03-03-2023 at 6:00 am

Market Forecasts Feb 2023
Source: Future Horizons

In 2021, we shocked the industry with our predictions of a double-digit ‘supercycle’ in 2022, followed by a crash in 2023. Despite industry skepticism, bordering on outright disbelief, our predictions were on point, based on decades of semiconductor experience and data analysis.

Now, as the industry finally accepts the impending crash, many still cling to the belief that their sector or application will be unaffected. As such, today’s debate has shifted from whether the market will go negative to whether it will be a single- vs double-digit decline.

We stand firmly by our belief that the market is heading for a 22 percent double-digit decline, despite, once again, being at odds with the industry consensus.

The Billion Dollar Question

At our recent January 2023 industry update webinar, we reconfirmed our May 2022 forecast for a 22 percent double-digit decline in 2023, despite the fact most (if not all?) other industry pundits were suggesting only a minor single digit decline, once again placing us well and truly out on a limb.

2023 SC Market Forecasts (By Value)

Source: Company Reports / SEMI / Semiconductors Intelligence / Future Horizons

This now marks the third time in a row where we have been at odds with industry consensus.

We do not do this to be contrarian, we simply cannot see how the low single-digit forecasts can be achieved.  For this to happen, the market would need to have already bottomed out and there is not a single piece of evidence, either anecdotal or factual, to substantiate that view. Almost two months into 2023, with the first quarter virtually in the bag, not a single individual, firm, or organization is forecasting the worst of the downturn is over.

The fact of the matter is the 2021-22 boom and 2023 bust are just a re-run of the infamous chip industry cyclicality … the seventeenth since the first cyclical downturn in 1961 … it’s just that the gap from the last cycle had been longer than normal, lulling the industry into a false sense of security that, for a whole sense of intellectually compelling reasons, the chip cycles had been tamed.

In retrospect, all that had happened was a week economy since the mid-2020’s financial meltdown had enabled the industry to dodge the bullet. The market boom and shortages would have hit home four years earlier, in 2018, had the chip market not collapsed in the second half of the year due to the US-China trade war and tariffs.

Back To Basics

Why are we so convinced the 2023 correction will be strong when everyone else thinks otherwise? Because the key industry fundamentals, namely unit demand, manufacturing capacity and IC ASPs, are all in bad shape.

First, driven by product shortages and extended delivery lead times, unit demand rises well above the long-term average and, as a result, inventory levels throughout the industry are at historically high levels. That’s akin to shipping ahead, and with lead times now falling, we already bought at lot of today’s needs yesterday.

Second, as demand falls away, ASPs start to plummet as suppliers drop prices in order to stimulate new demand.

Third, it takes a long time to add new production but eventually it catches up and lead times then start to fall triggering a liquidation of the now excess inventory.  In the meanwhile, the new capacity buildout continues to gain momentum stoking capacity just when you don’t need it. It takes a minimum of four quarters to rein in CapEx when no longer needed.

So, we now have unit demand falling, an ASP rout in full swing and excess capacity yet to peak.  It will take at least two to three quarters for this imbalance to stabilize which means the whole of 2023 is going to face strong headwinds.

Add to that a global economic outlook still clouded in fog and uncertainty, there is no way one can reasonably expect a single digit chip market downturn.

Time For Clear Heads & Action

That said, there is no need for panic or despair; the industry has been here several times before and, whilst these situations are always challenging and harsh, they are quite normal and natural and, ironically, a time when real market share gains are made.  It’s just a classic semiconductor market downturn, treading a well-trodden path.

Time now to roll up one’s sleeves and do whatever’s necessary to survive in the near-term but without prejudicing the longer-term; whatever actions are taken now need to be with the inevitable 2024 upturn clearly and firmly in mind.

This is no time to panic, more a time for decisive action, cool heads and first mover advantage. It is time to get ready for the inevitably 17th industry upturn which is just around the corner.

Also Read:

The Semiconductor Market Downturn Has Started

Semiconductor Crash Update

Are We Headed for a Semiconductor Crash?


Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation
by Fred Chen on 03-02-2023 at 10:00 am

Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

The many idiosyncrasies of EUV lithography affect the resolution that can actually be realized. One which still does not get as much attention as it should is the cross-slit pupil rotation [1-3]. This is a fundamental consequence of using rotational symmetry in ring-field optical systems to control aberrations in reflective optics [4-7].

On current 0.33 NA EUV systems, line pitches of 40 nm or less require dipole illumination, with illumination onto the mask coming from opposite sides of the optical axis. As the pitches are reduced, the range of allowed illumination angles is narrowed, also referred to as lower pupil fill. However, the range of illumination angles is actually rotated across the arc-shaped exposure field. Without proper caution, an angle suited for illumination in the center of the field can fail to be suitable at the edge of the field.

Dipole rotation with +/- 18 deg range for 28 nm horizontal line pitch restricts the originally allowed dipole with 28% pupil fill (left) to a rotation-safe pupil fill of 12% (right).

By limiting the exposed field width, the rotation range can be contained so that the rotation-safe pupil fill can be at least 20% to prevent system absorption and preserve throughput. For example, for the 28 nm pitch case, the allowed rotation range is less than +/- 9 degrees, while for the 30 nm pitch case, the rotation-safe pupil fill is 23% for the full +/- 18 degree range.

For the 0.55 NA systems, the imaging is anamorphic (8x in Y, 4x in X), so that the rotation range at the mask is halved for the wafer image. However, the pupil fill is likely to be restricted to <20% pupil fill regardless of rotation just due to the more limited depth of focus. For example, going from 30 nm pitch on 0.33 NA to 18 nm pitch on 0.55 NA, the pupil fill can be reduced from 23% to 18% just to accommodate +/-20 nm defocus. Rotation limits this down further to 8%.

The end result of these limitations would be die size limitations as a function of pitch once pitches are small enough. For example, die width should be restricted to less than 13 mm (half of the 26 mm maximum) for the 28 nm pitch on 0.33 NA. Even with die widths that follow this limit, it is a common practice to fit multiple dies in a single exposure field. In this case, the limit applies to the width of the multi-die exposure field. This would have some impact on the throughput due to the overhead of more frequent scanning [8].

Intel dodged this bullet by limiting 0.33 NA applications to 30 nm pitch and higher [9]. On the other hand, TSMC [10] and Samsung [11] have already applied 28 nm pitches, so they have undoubtedly come up against this limitation, although single exposure is made less likely as well by stochastic printing concerns and image fading, from EUV mask 3D effects.

References

[1] A. V. Pret et al., Proc. SPIE 10809, 108090A (2018).

[2] R. Miyazaki and P. Naulleau, Synchrotron Radiation News, 32(4), 2019: https://escholarship.org/uc/item/07h5f8vn

[3] F. Chen, The Need for Low Pupil Fill in EUV Lithography, https://www.linkedin.com/pulse/need-low-pupil-fill-euv-lithography-frederick-chen/

[4] M. F. Bal, F. Bociort, and J. J. M. Braat, Appl. Opt. 42, 2301 (2003); http://homepage.tudelft.nl/q1d90/FBweb/paraxial%20predesign.pdf

[5] W. C. Sweatt, OSA Meeting on Diffractive Optics: Design, Fabrication, and Applications, 1994; https://www.osti.gov/servlets/purl/10134858

[6] M. Antoni et al., Proc. SPIE 4146, 25 (2000).

[7] D. M. Williamson, Proc. SPIE 3482, 369 (1998).

[8] F. Chen, A Forbidden Pitch Combination at Advanced Lithography Nodes, https://www.linkedin.com/pulse/forbidden-pitch-combination-advanced-lithography-nodes-frederick-chen/

[9] R. Venkatesan et al., Proc. SPIE 12292, 1229202 (2022).

[10] https://www.angstronomics.com/p/the-truth-of-tsmc-5nm

[11] K. C. Park and H. Simka, 2021 IITC.

This article first appeared in LinkedIn Pulse: Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

Also Read:

Multiple Monopole Exposures: The Correct Way to Tame Aberrations in EUV Lithography?

Application-Specific Lithography: Sub-0.0013 um2 DRAM Storage Node Patterning

Secondary Electron Blur Randomness as the Origin of EUV Stochastic Defects