I would argue yes, but I'm mostly losing that argument. It is interesting to see just what the difference is between silicon dioxide gate dielectric (40nm) and high dielectric constant (28 and 20nm), on both the design and manufacturing side. Also the difference between silicon on insulator 32nm versus high dielectric constant 28 and 20nm.
View attachment 3205
IBM 14nm FinFet Wafer
GFI told me last week that Dresden Fab 1 has shipped 250k+ 32nm SOI HKMG wafers thus far, which is more than TSMC, implying that they have the needed experience to be successful at the smaller nodes.
"We consider 32/28nm as one node because the HKMG integration is the same. That's why we say our learning on 32nm translates directly to 28nm. 22/20nm is a similar situation, however the majority of the industry is adopting 20nm. That is our primary technology platform offering."
Sounds logical to me. Anybody else care to argue differently?
GLOBALFOUNDRIES Dresden Fab Ships 250,000th 32nm HKMG Wafer
32nm HKMG ramp leads foundry industry and outpaces previous ramp at 45nm node
Milpitas, Calif., March 21, 2012 – GLOBALFOUNDRIES today announced that its Fab 1 in Dresden, Germany has shipped a quarter of a million semiconductor wafers based on 32nm High-k Metal Gate (HKMG) technology. The milestone represents a significant lead over other foundries in HKMG manufacturing and carries on a long tradition of rapidly ramping leading-edge technologies to volume production.
On a unit basis, cumulative 32nm shipments for the first five quarters of wafer production are more than double that achieved during the same period of the 45nm technology ramp, demonstrating that the overall 32nm ramp has significantly outpaced the 45nm ramp, despite the integration of a number of new and complex elements in both design and process technologies.
Press Release
D.A.N.
View attachment 3206
View attachment 3205
IBM 14nm FinFet Wafer
GFI told me last week that Dresden Fab 1 has shipped 250k+ 32nm SOI HKMG wafers thus far, which is more than TSMC, implying that they have the needed experience to be successful at the smaller nodes.
"We consider 32/28nm as one node because the HKMG integration is the same. That's why we say our learning on 32nm translates directly to 28nm. 22/20nm is a similar situation, however the majority of the industry is adopting 20nm. That is our primary technology platform offering."
Sounds logical to me. Anybody else care to argue differently?
GLOBALFOUNDRIES Dresden Fab Ships 250,000th 32nm HKMG Wafer
32nm HKMG ramp leads foundry industry and outpaces previous ramp at 45nm node
Milpitas, Calif., March 21, 2012 – GLOBALFOUNDRIES today announced that its Fab 1 in Dresden, Germany has shipped a quarter of a million semiconductor wafers based on 32nm High-k Metal Gate (HKMG) technology. The milestone represents a significant lead over other foundries in HKMG manufacturing and carries on a long tradition of rapidly ramping leading-edge technologies to volume production.
On a unit basis, cumulative 32nm shipments for the first five quarters of wafer production are more than double that achieved during the same period of the 45nm technology ramp, demonstrating that the overall 32nm ramp has significantly outpaced the 45nm ramp, despite the integration of a number of new and complex elements in both design and process technologies.
Press Release
D.A.N.
View attachment 3206
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