Summary
As a result of extensive focus on the development of workfunction metal (WFM) deposition, lithography, and removal, both FinFET and gate-all-around (GAA) devices will offer a wide range of Vt levels for advanced process nodes below 7nm.
Introduction
Cell library and IP designers rely on the availability of nFET and pFET… Read More
Rapidus, IBM, and the Billion-Dollar Silicon Sovereignty Bet