TSMC’s 2024 Sustainability Report: Pioneering a Greener Semiconductor Future

TSMC’s 2024 Sustainability Report: Pioneering a Greener Semiconductor Future
by Admin on 09-07-2025 at 8:00 am

TSMC Substainability Report 2024 2025

TSMC, the world’s most trusted semiconductor foundry, released its 2024 Sustainability Report, underscoring its commitment to embedding environmental, social, and governance principles into its operations. Founded in 1987 and headquartered in Hsinchu Science Park, TSMC employs 84,512 people globally and operates facilities across Taiwan, China, the U.S., Japan, and Europe. The report, spanning 278 pages, highlights TSMC’s role as an “innovation pioneer, responsible purchaser, practitioner of green power, admired employer, and power to change society.” Amid rising global risks like extreme weather, as noted in the World Economic Forum’s Global Risks Report, TSMC emphasizes multilateral cooperation to advance sustainability, aligning with UN Sustainable Development Goals (SDGs).

In letters from ESG Steering Committee Chairperson C.C. Wei and ESG Committee Chairperson Lora Ho, TSMC reaffirms sustainability as core to its resilience and competitiveness. Wei stresses that ESG is embedded in every decision, driving net zero emissions by 2050 and carbon neutrality. The company saved 104.2 billion kWh globally in 2024 through efficient chips, equivalent to 44 million tons of reduced carbon emissions. By 2030, each kWh used in production is projected to save 6.39 kWh worldwide. Ho highlights collaborations across five ESG directions: green manufacturing, responsible supply chains, inclusive workplaces, talent development, and care for the underprivileged.

Environmentally, as a “practitioner of green power,” TSMC focuses on climate and energy (pages 108-123), water stewardship (pages 124-134), circular resources (pages 135-146), and air pollution control (pages 147-153). It deployed 1,177 energy-saving measures, achieving 810 GWh in annual savings and 13% renewable energy usage, targeting 60% by 2030 and RE100 by 2040. Scope 1-3 emissions reductions follow SBTi standards, with 2025 as the baseline for absolute cuts by 2035. A new carbon reduction subsidy for Taiwanese tier-1 suppliers and the GREEN Agreement for 90% of raw material emitters aim to slash Scope 3 emissions. Water-positive goals by 2040 include a 2.7% reduction in unit consumption and 100% reclaimed water systems. Circular efforts recycled 97% of waste globally, transforming 9,400 metric tons into resources, while volatile organic compounds and fluorinated GHGs saw 99% and 96% reductions, respectively.

Socially, TSMC positions itself as an “admired employer” (pages 155-202), fostering an inclusive workplace with a Global Inclusive Workplace Statement and campaigns on action, equity, and allyship. It conducted a global Workplace Human Rights Climate Survey and expanded human rights due diligence to suppliers, incorporating metrics into long-term goals. Women comprise 40% of employees, with targets for over 20% in management. Talent development averaged 90 learning hours per employee, with programs like the Senior Manager Learning and Development achieving 90-point satisfaction. Occupational safety maintained an incident rate below 0.2 per 1,000 employees, enhanced by 24/7 ambulances and diverse protective gear. As a force for societal change (pages 204-232), TSMC’s foundations benefited 1,391,674 people through 171 initiatives, investing NT$2.441 billion. Social impact assessments using IMP and IRIS+ frameworks supported STEM education, elderly care, and SDG 17 partnerships.

Governance-wise (pages 234-251), TSMC reported NT$2.95 trillion in revenue and NT$1.17 trillion in net income, with 69% from advanced 7nm-and-below processes. R&D spending hit US$6.361 billion, up 3.1-fold in a decade. The ESG Performance Summary (pages 263-271) details metrics like 100% supplier audits and top rankings in DJSI and MSCI ESG.

Bottom line: The report showcases TSMC’s 2024 achievements: 11,878 customer innovations, 96% customer satisfaction, and NT$2.45 trillion in Taiwanese economic output, creating 358,000 jobs. Despite challenges like geopolitical tensions, TSMC’s net zero roadmap and inclusive strategies position it as a sustainability leader, driving shared value for stakeholders and a resilient future.

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TSMC Describes Technology Innovation Beyond A14

TSMC Brings Packaging Center Stage with Silicon


TSMC 2025 Update: Riding the AI Wave Amid Global Expansion

TSMC 2025 Update: Riding the AI Wave Amid Global Expansion
by Daniel Nenni on 09-05-2025 at 6:00 am

CC Wei Donold Trump Handshake

Welcome to the second half of a very exciting year in semiconductors. While Intel and Samsung Foundry have made quite a few headlines, TSMC continues to execute flawlessly at 3nm and 2nm. With the TSMC OIP Ecosystem Forums starting later this month let’s take a look at how we got to where we are today.

The TSMC OIP Ecosystem Forum is the second series of events. At the previous TSMC Technology Symposium last April we were told that N2 design starts were exceeding N3 which was quite a statement. From what I have learned from the ecosystem over the last few months, that may have been an understatement. TSMC N2 is absolutely dominating the foundry business and for good reasons, but most importantly it is trust. TSMC’s market share at 3nm and 2nm is upwards of 90% while their total market share is now between 60-70%. Simply amazing but well deserved.

Financially, TSMC has delivered stellar results. In the second quarter of 2025, revenue reached a record $30.1 billion, marking a 44% year-over-year increase. Gross margins climbed to 59%, up 5 percentage points from the previous year, reflecting strong pricing power and efficiency gains from previous nodes. Net profit surged, with earnings per share hitting NT$15.36, beating analyst forecasts. For the first half of the year, total sales hit $60.5 billion, a 40% jump from 2024. Buoyed by this momentum, TSMC raised its full-year 2025 revenue growth guidance to approximately 30%, up from 25%. Personally I believe TSMC is once again being conservative. My guess would be 35% revenue growth but that depends on China business (Nvidia) which seems to be constrained.  Either way it will be another great year for TSMC.

My optimism stems from unrelenting AI-related demand with revenue from AI accelerators expected to double in 2025. TSMC capital expenditures for the year are projected at $38 billion to $42 billion, focusing on advanced process technologies and overall capacity expansion.

On the technology front TSMC is still pushing boundaries. The company plans to start high volume manufacturing of its N2 chips in the fourth quarter of 2025 which is earlier than anticipated, meaning yield is higher than anticipated. Trial production at its Kaohsiung and Hsinchu fabs has already begun with Apple, Nvidia, AMD, Qualcomm, and MediaTek leading customer demand. Looking further ahead, TSMC broke ground on a 1.4nm facility in Taiwan, with mass production targeted for the second half of 2028, promising 15% performance gains and 30% power savings. Additionally, advanced packaging capacity (CoWoS) has already doubled to 75,000 WPM six months ahead of schedule through partnerships with ASE and Amkor.

Expansion remains a key strategy amid geopolitical tensions. TSMC’s Arizona subsidiary turned profitable in the first half of 2025, reporting a $150.1 million net profit after initial losses. The company is also advancing fabs in Europe and Japan to strengthen supply chains. In Taiwan, new facilities like Fab 25 in the Central Taiwan Science Park will house 1.4nm and 1nm plants with trial production starting in 2027. A new Taiwanese law ensures cutting-edge tech stays on the island, keeping overseas fabs one generation (N-1) behind. This move addresses U.S.-China trade frictions and potential tariffs, which TSMC has flagged as potential risks.

Despite headwinds like currency fluctuations and rising operational costs, TSMC’s outlook is bullish. Third-quarter revenue is forecasted at $31.8 billion to $33 billion, supported by AI and high-performance computing demand. Monthly revenues through June 2025 showed consistent growth, with June alone up 39.6% year-over-year. Analysts maintain a “Buy” rating, citing sustained AI momentum and even Jensen Huang (Nvidia CEO) has a “Buy” rating on TSMC (“anybody who wants to buy TSMC stock is a very smart person”). Never in the 30+ year history of Nvidia and TSMC have I ever seen Jensen so complimentary of TSMC and that will tell you how closely they are working together.

From 2025 to 2030, TSMC’s investments will reshape sectors like AI, automotive, and consumer electronics, reinforcing its ecosystem for a competitive landscape. As my semiconductor bellwether, TSMC’s trajectory signals a thriving semiconductor industry though vigilance on geopolitics remains essential. Dr. C.C. Wei has proven to be a politically savvy leader so I have no concerns here at this point in time. Go TSMC and GO semiconductor industry, $1 trillion dollars by 2030, absolutely!

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Alchip Launches 2nm Design Platform for HPC and AI ASICs, Eyes TSMC N2 and A16 Roadmap

Alchip Launches 2nm Design Platform for HPC and AI ASICs, Eyes TSMC N2 and A16 Roadmap
by Daniel Nenni on 07-22-2025 at 6:10 am

Alchip TSMC N2 announcement SemiWiki

Alchip Technologies, a global leader in high-performance computing (HPC) and AI infrastructure ASICs, has officially launched its 2nm Design Platform, marking a major advancement in custom silicon design. The company has already received its first 2nm wafers and is collaborating with customers on the development of high-performance ASICs built on this next-generation node. This milestone positions Alchip among the earliest adopters of TSMC’s leading-edge technologies, with a clear roadmap that extends to both TSMC’s N2 (2nm) and upcoming A16 (1.6nm) process technologies.

Advanced Chiplets and Packaging for 2nm Compute Systems
The new design platform delivers a full-stack methodology for building compute-dense, power-efficient ASICs on TSMC’s N2 node. It supports a broad set of chiplet integration strategies, enabling 2nm compute dies to work in tandem with 3nm or 5nm I/O chiplets. This approach supports a heterogeneous architecture that optimizes performance, yield, and design flexibility—critical in the post-Moore’s Law era.

Alchip’s platform also supports TSMC’s CoWoS®-S/R/L 2.5D/3D packaging, System on Integrated Chip (SoIC®-X) bonding, and is on track to support System on Wafer (SoW™) packaging for 3DICs. Additionally, die-to-die (D2D) IP and IO chiplet development are built into the platform, ensuring robust interconnect and thermal-aware design.

Overcoming N2 Design Complexity

TSMC’s N2 process represents its first gate-all-around (GAAFET) node, replacing FinFETs with nanosheet transistors. This shift offers notable benefits in performance, power efficiency, and area (PPA), with up to 10–15% speed gain or 25–30% power reduction over N3E. However, it also introduces significant layout and manufacturing challenges. These include tighter design rules, more complex power and signal routing, and new constraints around nanosheet stacking and variability.

Alchip’s 2nm Design Platform is engineered to address these issues head-on. The design flow is optimized to manage the increased diversity of standard cells and the denser transistor layouts introduced at N2. By anticipating placement, routing, and power integrity challenges early in the design process—before floorplanning or clock tree synthesis—Alchip reduces turnaround time while enhancing design predictability.

Power and Thermal Density Solutions

At 2nm, power and thermal density per square millimeter rise significantly due to increased gate counts and faster switching. Alchip’s methodology addresses this with thermal-aware floorplanning, advanced packaging co-optimization, and strategic power distribution planning. Even in the absence of native 2nm I/O chiplets, the platform supports mixed-node integration using 3nm and 5nm I/O for early deployment and yield optimization.

First-Pass Success, SoIC Demonstration, and A16 Transition

Alchip’s 2nm test chip achieved first-pass silicon success, validating both its methodology and IP stack. The design featured the company’s proprietary AP-Link-3D I/O interface, demonstrating full compatibility with SoIC-X chiplet interconnect. These results reinforce Alchip’s leadership in 3D integration and position it well for TSMC’s future process nodes, including A16™, which introduces backside power delivery and further transistor performance improvements.

Positioning for the TSMC N2 Era

TSMC began risk production on N2 in late 2024, with volume ramp expected in the second half of 2025. N2 introduces nanosheet GAAFETs, enabling better electrostatic control and design flexibility with variable channel widths. Alchip’s 2nm platform ensures customers are equipped to tap into these benefits while mitigating the risks associated with early-node development.

“We’re open for business and ready to support customers’ 2nm demand,” said Erez Shaizaf, CTO of Alchip Technologies. “Our new platform positions us as an industry leader, not only at 2nm but as we prepare for TSMC’s A16 era.”

“The is really just another milestone on our 2nm roadmap. Alchip’s 2nm platform is ready to work with key IP vendors, and we’ve been actively engaged with a couple of different companies on their 2nm ASIC developments. We anticipate this to be a very popular node for high-performance computing innovation,” explains Dave Hwang, General Manager, North America Business Unit.

Contact Alchip

About Alchip

Founded in 2003 and headquartered in Taipei, Alchip Technologies Ltd. is a leading global ASIC provider, specializing in HPC and AI applications. Its services span ASIC design, chiplet integration, 2.5D/3D packaging, and manufacturing management. Alchip serves top-tier system companies worldwide and is listed on the Taiwan Stock Exchange .

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Certus Semiconductor at the 2025 Design Automation Conference #62DAC

Certus Semiconductor at the 2025 Design Automation Conference #62DAC
by Daniel Nenni on 06-15-2025 at 10:00 am

62nd DAC SemiWiki

Certus Semiconductor Brings High-Performance Custom I/O and ESD IP to DAC 2025

Certus Semiconductor, a trusted leader in custom I/O and ESD solutions, will exhibit at booth #1731 during DAC 2025, June 23–27 in San Francisco. Known for its robust, customer-proven IP tailored for challenging applications, Certus will highlight its extensive portfolio of high-speed, multi-voltage, and specialty I/O libraries that deliver seamless integration and outstanding protection across advanced nodes.

With over 16 years of experience, Certus specializes in developing custom I/O and ESD solutions for a wide range of high-performance interfaces—WiFi, Cellular, HDMI, LVDS, USB, XAUI, and up to 256Gb SerDes—while supporting harsh environments like automotive, industrial, and aerospace.

Certus recently joined the TSMC Open Innovation Platform® (OIP) IP Alliance, enabling the company to apply its custom I/O and ESD technology to TSMC’s advanced process nodes and deliver optimized, foundry-aligned IP to a broader base of SoC developers.

At DAC 2025, Certus will demonstrate how its IP portfolio supports:

  • Multi-protocol and multi-voltage I/O libraries for simplified integration across a wide voltage and protocol range
  • Combo GPIOs supporting interfaces like I²C/I³C/SPI/LVCMOS/HSTL/SSTL/eMMC
  • High-voltage and ultra-high-voltage (10V, 20V+) ESD protection on low-voltage CMOS for analog, RF, and MEMS applications
  • Custom die-to-die and high-speed SerDes I/O solutions with industry-leading low capacitance and robust ESD performance
  • Radiation-hardened and automotive-grade solutions across process nodes from 180nm down to 12nm

Certus’s IP is designed for performance, reliability, and ease of use—backed by expert technical support and a deep understanding of customer integration needs. Whether you’re working on ultra-low-power sensor interfaces or high-speed SoC interconnects, Certus offers IP that’s built to meet your design challenges head-on.

Visit Certus at DAC 2025 (booth #1731) to see how their cutting-edge custom I/O and ESD solutions can streamline your next chip design.

Learn more at www.certus-semi.com

DAC registration is open.

Also Read:

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CEO Interview: Stephen Fairbanks of Certus Semiconductor


Alchip’s Technology and Global Talent Strategy Deliver Record Growth

Alchip’s Technology and Global Talent Strategy Deliver Record Growth
by Kalar Rajendiran on 05-20-2025 at 10:00 am

Alchip TSMC 2nm N2

Alchip Technologies Ltd., a global leader in high-performance computing (HPC) and artificial intelligence (AI) ASIC design and production services, continues its trajectory of rapid growth and technical leadership by pushing the boundaries of advanced-node silicon, expanding its global design capabilities, and building customer-centric solutions that differentiate at the packaging level. In a candid update from CEO Johnny Shen, three pillars emerged as central to Alchip’s strategy: technology leadership, talent deployment, and customer-driven business execution.

TECHNOLOGY: 2nm and 3nm

Alchip is preparing for a significant technology inflection with the introduction of 2nm  design enablement, the first gate-all-around (GAA) transistor node. While 3nm (the final FinFET-based node) will dominate most production designs in 2025, a select few projects are advancing into 2nm, which introduces unique design complexities. These include significantly higher compute power requirements for final sign-off and verification.

During peak 3nm workloads, Alchip leveraged more than 500 servers; for 2nm, even larger compute infrastructures will be required. The company’s 2nm test chip taped out in 2024, with silicon results expected soon. These results will help quantify the PPA (power, performance, area) delta between 3nm and 2nm. While pure 2nm designs might be rare, hybrid approaches—with compute logic in 2nm and analog/mixed-signal components in 3nm chiplets—are becoming common among customers.

Alchip’s early 2nm work is already being validated by one of its more significant customers, who plans to initiate both a test chip and product chip kickoff, within 2025. This underscores Alchip’s credibility as a first-choice ASIC partner for leading-edge silicon.

TEAM: Strategic Global Expansion of Engineering Resources

With 86% of 2024 revenue originating from North America, and with global expansion considerations, Alchip is aggressively shifting its design workforce to Taiwan, Japan, and Southeast Asia. In Vietnam, where the company already employs 30 engineers, headcount is expected to grow to 70–80 by the end of 2025. Similarly, Malaysia’s team is expanding from 20 to approximately 50 engineers. By year-end, over half of Alchip’s engineering workforce will reside outside China.

This distributed R&D model not only ensures IP security and compliance with international regulations but also enables proximity to foundries, customers, and local talent pools. In the United States, Alchip is scaling up its Field Application Engineers (FAEs), Program Managers (PMs), and senior R&D experts to support a customer base that demands nuanced understanding of compute architecture, PPA trade-offs, and roadmap alignment.

For package and assembly support, much of the technical interface remains US-based, with Taiwan-based experts frequently dispatched to co-locate with customers when needed. Testing and product engineering disciplines remain centralized in Taiwan, where Alchip’s reputation as a top-tier semiconductor employer provides a strong pipeline of experienced hires.

BUSINESS: Record-Breaking Growth Driven by Differentiated Solutions

In 2024, Alchip delivered its seventh consecutive year of record financials, with revenue of $1.62 billion and net income of $200.8 million—each marking new highs. These numbers translate into a revenue-per-employee ratio of approximately $2.5 million, placing Alchip among the most productive companies in the semiconductor industry.

Core to this growth is the company’s differentiated package engineering. While customers rarely question Alchip’s ability to deliver on the compute side, most customer inquiries now revolve around packaging strategy. These include determining the optimal HBM stack configuration, interposer design, chiplet integration, thermal modeling, and overall system optimization.

Alchip has completed 18 CoWoS (Chip-on-Wafer-on-Substrate) designs, the most of any ASIC partner, according to TSMC. These designs have varied significantly by customer, each requiring unique interposer geometries, memory bandwidth targets, and form factor considerations. Johnny attributes this capability to Alchip’s focus on emerging, high-tech startups, whose need to innovate quickly forces the company to stay ahead of the technology curve.

This flexibility and deep design experience have made Alchip a go-to partner not only for startups, but also for established tech giants pursuing the next wave of AI and HPC performance.

Outlook: Enabling Tomorrow’s Compute Platforms

With 20–30 tape outs per year, Alchip maintains a rapid feedback loop that continuously hones its methodology, toolchains, and cross-functional workflows. As customers move toward 2nm GAA, 3DIC architectures, and multi-die systems, Alchip is positioning itself as a turnkey provider of silicon, packaging, and system-level integration expertise.

Its tight alignment with TSMC’s roadmap, along with a strategic pivot toward a distributed global engineering footprint, ensures that Alchip will remain a critical player in enabling the future of AI and HPC workloads. The company’s ability to combine advanced silicon design with deep system integration know-how is what makes it not just a service provider—but a true innovation partner.

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Analog Bits Steals the Show with Working IP on TSMC 3nm and 2nm and a New Design Strategy

Analog Bits Steals the Show with Working IP on TSMC 3nm and 2nm and a New Design Strategy
by Mike Gianfagna on 05-09-2025 at 8:00 am

Analog Bits Steals the Show with Working IP on TSMC 3nm and 2nm and a New Design Strategy

The TSMC Technology Symposium recently kicked off in Santa Clara, with a series of events scheduled around the world. This event showcases the latest TSMC technology. It is also an opportunity for TSMC’s vast ecosystem to demonstrate commercial application on TSMC’s technology. There is a lot to unpack at an event like this. There are great presentations and demonstrations everywhere, but occasionally a company rises above the noise and grabs the spotlight with unique or memorable news.

My view is that Analog Bits stepped into the spotlight this year with cutting-edge analog IP on the latest nodes and a strategy that will change the way design is done. Let’s examine how Analog Bits steals the show with working IP on TSMC 3nm and 2nm and a new design strategy.

Blazing the Trail to 2nm

Working silicon demonstrations of TSMC’s CLN2P technology represent rare air at this TSMC event. Analog Bits recently completed a successful second test chip tapeout at 2nm, but the real news is the company also came to the show with multiple working analog IPs at 2nm. Six precision IPs were demonstrated, the locations of those blocks on the test chip is shown below and the finished chip pictured at the top of this post.

ABITCN2P – Test Chip Layout

What follows are some details from the cutting edge. Let’s begin with the wide range PLL.  Features of this IP include:

  • Electrically programmable for multiple applications
  • Wide range of input and output frequencies for diverse clocking needs
  • Implemented with Analog Bits’ proprietary architecture
  • Low power consumption
  • Spread spectrum tracking capability
  • Requires no additional on-chip components or bandgaps, minimizing power consumption
  • Excellent jitter performance with optimized noise rejection

The figure below illustrates some power and jitter numbers. Note the jitter data is for the whole test setup, test chip output buffers, test board, measurement equipment, and not a de-embedded number of the PLL standalone.

PLL Jitter and Power

Next is the PVT sensor. IPs like this are critical for managing power and heat. There will be more on power management in a bit. Features of this IP include:

  • High accuracy thermometer is a highly integrated macro for monitoring temperature variation on-chip
  • Industry leading accuracy untrimmed, with easy trimming procedures
  • An additional voltage sample mode is included allowing for voltage monitoring
  • The block includes a simple-to-use digital interface that works with standard core and IO level power supplies
  • Implemented with Analog Bits’ proprietary architecture
  • Low power consumption

Demonstrations included showcasing the temperature accuracy and temperature and voltage linearity of the IP.

Next is a droop detector. Voltage droop is another key item for power management.  It occurs when the current in the power delivery network (PDN) abruptly changes, often due to workload fluctuations. This effect can lead to supply voltage drops across the chip which can cause performance degradation, reduce energy efficiency, and even result in catastrophic timing failures. Feature of this IP include:

  • Integrated voltage reference for stand-alone operation
  • Easy to integrate with no additional components or special power requirements
  • Easy to use and configure
  • Programmable droop detection levels
  • Low power
  • Implemented with Analog Bits’ proprietary architecture
  • Requires no additional on-chip macros, minimizing power consumption

The next IP is an 18-40MHz crystal oscillator. Features for this IP include:

  • Pad macro that supports most industry standard crystals in the 18-40MHz range
  • Uses standard CMOS transistors
  • Power-down option for IDDQ testing
  • Oscillator by-pass mode option for logic testing
  • Self-contained ESD protection structure

And finally, the differential transmit (TX) and receive (RX) IP blocks. Features here include:

TX

  • Wide frequency range support up to 2,000 MHz output for diverse clocking needs
  • Implemented with Analog Bits’ proprietary architecture
  • Low power consumption
  • Requires no additional on-chip components or bandgaps, minimizing power consumption

RX

  • Differential clock receiver
  • Single-ended output to chip core
  • Wide ranges of input frequencies for diverse clocking needs
  • Implemented with Analog Bits’ proprietary architecture
  • Low power consumption
  • Programmable termination
  • Spread spectrum tracking capability
  • Requires no additional on-chip components or bandgaps, minimizing power consumption

On the Cutting Edge with 3nm IP

Four power management IPs from TSMC’s CLN3P process were also demonstrated at the show. The test chip these IPs came from is also pictured in the graphic at the top of this post. The IPs demonstrated include:

A scalable low-dropout (LDO) regulator. Features of this IP include:

  • Integrated voltage reference for precision stand-alone operation
  • Easy to integrate with no additional components or special power requirements
  • Easy to use and configure
  • Scalable for multiple output currents
  • Programmable output level
  • Trimmable
  • Implemented with Analog Bits’ proprietary architecture
  • Requires no additional on-chip macros, minimizing power consumption

The line regulation performance of this IP is shown in the figure below.

Next is a spread spectrum clock generation PLL supporting PCIe Gen4 and Gen5. Features of this IP include:

  • High performance design emphasis for meeting low jitter requirements in PCIe Gen4 and Gen5 applications
  • Implemented with Analog Bits’ proprietary LC architecture
  • Low power consumption
  • Spread spectrum clock generation (SSCG) and tracking capability
  • Excellent jitter performance with optimized noise rejection
  • Calibration code and bandgap voltage observability (for test)
  • Requires no additional on-chip components, minimizing power consumption

A high-accuracy thermometer IP using Analog Bits patented pinless technology was also demonstrated. Features of this IP include:

  • IP is a highly integrated macro for monitoring temperature variation on-chip
  • Industry leading accuracy untrimmed, with easy trimming procedures
  • An additional voltage sample mode is included allowing for voltage monitoring
  • The block includes a simple-to-use digital interface that works with just standard core and power supply saving customers analog routing and simplifying package design
  • Pinless technology means the IP is powered by the core voltage, no analog power pin is required
  • Low power consumption

Voltage linearity for this IP is shown in the figure below.

Voltage Linearity

And finally, a droop detector for 3nm. Features include:

  • Integrated voltage reference for stand-alone operation
  • Easy to integrate with no additional components or special power requirements
  • Easy to use and configure
  • Programmable droop detection levels
  • Low power
  • Implemented with Analog Bits’ proprietary architecture
  • Requires no additional on-chip macros, minimizing power consumption

Intelligent Power Architecture Launches a New Design Strategy

Innovation brings new challenges. A big design challenge is optimizing performance and power in an on-chip environment that is constantly changing, is prone to on-chip variation and is faced with all kinds of power-induced glitches. As multi-die design grows, these problems are compounded across many chiplets that now also need a high-bandwidth, space-efficient, and power-efficient way to communicate.

This problem cannot be solved as an afterthought. Plugging in optimized IP or modifying software late in the design process will not be enough. Analog Bits believes that developing a holistic approach to power management during the architectural phase of the project is the only path forward.

It is against this backdrop that the company announced its Intelligent Power Architecture initiative at the TSMC Technology Symposium. The company stated that its high-accuracy on-die PVT sensors, process performance monitors, integrated power-on resets, droop detectors, LDOs, and glitch catchers all work together with its low power SerDes, ADCs and pinless IP libraries to deliver a power management architecture that will meet the most demanding requirements. Pinless IP technology, invented by Analog Bits, will become even more critical to migrate below 3nm as all of the IP will work directly from the core voltage. The technology is already proven in production silicon on N5 and N3.

Analog Bits stated the company is already working with large, successful organizations that are building some of the most power-hungry chips in the world to achieve this goal. The mission now is to bring an intelligent power architecture to mainstream design for all companies. This work will be interesting to watch as Analog Bits re-defines the way advanced design is done. 

To Learn More

You can find extensive coverage of Analog Bits on SemWiki here. You can also learn more about what Analog Bits did at the TSMC Technology Symposium here, including additional IP demos  of automotive grade pinless high-accuracy PVT, pinless PLL, and PCIe SERDES on TSMC N5A. And you can watch the details of both the 2nm and 3nm demos here.

Keep watching the company’s website as the strategy behind the Intelligent Power Architecture unfolds. And that’s how Analog Bits steals the show with working IP on TSMC 3nm and 2nm and a new design strategy.

Also Read:

2025 Outlook with Mahesh Tirupattur of Analog Bits

Analog Bits Builds a Road to the Future at TSMC OIP

Analog Bits Momentum and a Look to the Future


TSMC Describes Technology Innovation Beyond A14

TSMC Describes Technology Innovation Beyond A14
by Mike Gianfagna on 05-01-2025 at 10:00 am

Device Architecture Outlook

The inaugural event for the 2025 TSMC Technology Symposium recently concluded in Santa Clara, California. This will be followed by events around the world over the next two months. We have summarized information from this event regarding process technology innovation and advanced packaging innovation. Overall, the A14 process node was deemed to define the most advanced technology available from TSMC. Recently, a presentation from the event was posted that discusses technology leadership, and in that presentation, what lies beyond A14. Seeing what’s around the next corner is always interesting. Let’s look at how TSMC describes technology innovation beyond A14.

The Presenter

Dr. Yuh Jier Mii

The presenter was Dr. Yuh-Jier Mii, EVP and Co-Chief Operating Officer at TSMC. Dr. Mii is an excellent presenter. He describes very complex work in language everyone can understand. His presentation builds on work he presented at last year’s IEDM event. Dr. Mii covered a lot of information. A link is coming. But first, I’d like to focus on his comments on innovation at TSMC beyond A14. 

What Was Said

The broad focus of Dr. Mii’s discussion focused on new transistor architectures and new materials. He began by discussing device architectures. The current evolution is from FinFET to Nanosheet. Beyond these technologies, vertically stacked NFET and PFET devices, called CFETs is a likely scaling candidate. Beyond CFET, there are breakthroughs in channel material that can enable further dimensional scaling and energy reduction. These developments are summarized in the graphic above.

Dr. Mii reported that TSMC has been actively building CFET devices on silicon to enable the next level of scaling. TSMC presented its first CFET transistor at a 48nm gate pitch at IEDM 2023. This year at IEDM, TSMC presented the smallest CFET inverter. The figure below illustrates the well-balanced performance characteristics of this device up to 1.2V.

He explained that this demonstration achieved a significant milestone in CFET technology development that will help to drive future technology scaling.

Dr. Mii reported that great progress has also been made on transistors with 2D channel materials. TSMC has demonstrated the first electrical performance using a monolayer channel in stacked nanosheet architecture similar to the N2 technology. An inverter has also been developed using well-matched N and P channel devices operating at 1V. This work is summarized in the figure below.

Going forward, there are plans to continue to develop new interconnect technologies to improve interconnect performance. For copper interconnect, the plan is to use a new via scheme to reduce via resistance and coupling capacitance. Work is also underway on a new copper barrier to reduce copper line resistance.

Beyond copper, there is work underway on new metal materials with an air gap that could further reduce resistance and coupling capacitance. Intercalated Graphene is another new and promising metal material that could significantly reduce interconnect delay in the future. This work is summarized in the graphic below.

To Learn More

Dr. Mii covered many other topics. You can view his entire presentation here. And that’s how TSMC describes technology innovation beyond A14.

Also Read:

TSMC Brings Packaging Center Stage with Silicon

TSMC 2025 Technical Symposium Briefing

IEDM 2025 – TSMC 2nm Process Disclosure – How Does it Measure Up?


TSMC Brings Packaging Center Stage with Silicon

TSMC Brings Packaging Center Stage with Silicon
by Mike Gianfagna on 04-23-2025 at 11:45 am

TSMC Brings Packaging Center Stage with Silicon

The worldwide TSMC 2025 Technology Symposium recently kicked off with the first event in Santa Clara, California. These events typically focus on TSMC’s process technology and vast ecosystem. These items were certainly a focus for this year’s event as well. But there is now an additional item that shares the spotlight – packaging technology. Thanks to the increase in heterogeneous integration driven in large part by AI, the ability to integrate multiple dies in sophisticated packages has become another primary driver for innovation. So, let’s look at what was shared at the pre briefing by Dr. Kevin Zhang and how TSMC brings packaging center stage with silicon.

A Growing Palette of Options

TSMC has taken advanced packaging well beyond the 2.5D interposer approach that is now quite familiar. The diagram above was provided by TSMC to illustrate the elements that comprise the TSMC 3DFabric® technology portfolio. According to TSMC, transistor technology and advanced packaging integration technology go hand-in-hand to provide its customers with a complete product-level solution.

On the left are the options for stacking or die-level/wafer-level integration. SoIC-P ( below) uses microbump technology to deliver down to a 16um pitch. Using bumpless technology (SoIC-X), you can achieve a few micron pitch. TSMC started with 9um and is now in production at 6um with more improvements to come, creating a monolithic-like integration density.

For 2.5/3D integration, there are many options available. Chip on Wafer on Substrate (CoWoS) technology supports both the familiar silicon interposer as well as CoWoS-L, which uses an organic interposer with a local silicon bridge for high-density interconnect. CoWos-R provides a pure organic interposer.

Integrated Fan-Out (InFO) technology began in 2016 for mobile applications. The platform has been expanded to support automotive applications as well.

There is also the newer System-on-Wafer (TSMC-SoW™) packaging. This technology broadens the integration scale to the wafer level. There is a chip-first approach (SoW-P), where the chip is put on the wafer and then an integrated RDL is built to bring the dies together.  Or, there is a chip-last approach (SoW-X), where you first build the interposer at the wafer level and then add the chips across the wafer. This last approach can produce a design that is 40X larger than the standard reticle size.

High-performance computing for AI is clearly a major driver for advanced packaging technology. The first diagram below provided by TSMC, illustrates a typical AI accelerator application today that integrates a monolithic SoC with HBM memory stacks through a silicon interposer. Some major improvements that are coming for this type of architecture as shown on the next diagram.

The monolithic SoC is now replaced with a 3D stack of chips to address high-density compute requirements. HBM memory stacks are integrated with an RDL interposer. Integrated silicon photonics will also be part of the design to improve communication bandwidth and power. Integrated voltage regulators will also help to optimize power for this type of application.

Regarding power optimization, future AI accelerators can require thousands of watts of power, creating a huge challenge in terms of power delivery into the package. Integrated voltage regulators will help to tame this class of problem. TSMC has developed a high-density inductor which is a key component required to develop this class of regulator. So, a monolithic PMIC plus this Inductor can provide a 5X power delivery density (vs. PCB level).

There are many exciting new technologies on the horizon which will require all the packaging innovation discussed here. Augmented reality glasses is one example of a new product that will require everything discussed. A device like this will require, among other things, an ultra-low power processor, a high resolution camera for AR sensing, eNVM for code storage, a large main processor for spatial computing, a near-eye display engine, WiFi/Bluethooth for low latency RF, and a digital intensive PMIC for low power charging. This kind of product will set a new bar for complexity and efficiency.

While autonomous vehicles get a lot of attention, the demands of humanoid robots were also discussed. TSMC provided the graphic below to illustrate the significant amount of advanced silicon required. And the ability to integrate all of this into dense, power efficient packages is critical as well.

To Learn More

It was clear at the TSMC Technology Symposium that advanced processing and advanced packaging will need to work as one going forward to achieve the type of product innovation on the horizon. TSMC has clearly taken this challenge and is developing unified offerings to address the coming requirements.

You can learn more about TSMC’s 3DFabric Technology here. And that’s why TSMC brings packaging center stage with silicon.

 

UPDATE: TSMC is sharing recordings of the presentations HERE.

Also Read:

TSMC 2025 Technical Symposium Briefing

IEDM 2025 – TSMC 2nm Process Disclosure – How Does it Measure Up?

TSMC Unveils the World’s Most Advanced Logic Technology at IEDM

IEDM Opens with a Big Picture Keynote from TSMC’s Yuh-Jier Mii

 


TSMC 2025 Technical Symposium Briefing

TSMC 2025 Technical Symposium Briefing
by Daniel Nenni on 04-23-2025 at 11:40 am

TSMC Advanced Tecnology RoadMap 2025 SemiWiki

At the pre-conference briefing, Dr. Kevin Zhang gave quite a few of us media types an overview of what will be highlighted at the 2025 TSMC Technical Symposium here in Silicon Valley. Since most of the semiconductor media are not local this was a very nice thing to do. I will be at the conference and will write more tomorrow after the event. TSMC was also kind enough to share Kevin’s slides with us.

The important thing to note is that TSMC is VERY customer driven so this presentation is based on interactions with the largest semiconductor manufacturing customer base the industry has ever seen, absolutely.

As you can imagine, AI is driving the semiconductor industry now not unlike what smartphones did for the last two decades. The difference being that AI consumes leading edge silicon at an alarming rate which is a good thing for the semiconductor industry. While AI is very performance centric, it must also be power sensitive. This puts TSMC in a very strong position from all of those years of manufacturing mobile SOCs for smartphones and other battery operated devices.

Kevin started with the AI revolution and how AI will be infused into most every electronic device from the cloud to the edge and will enable many new applications. Personally, I think AI will transform the world in a similar fashion as smartphones have but on a much grander scale.

Not long ago the mention of the semiconductor industry hitting $1T seemed like a dream. It is one thing for industry observers like myself to say it but it is quite another when TSMC does. There is little doubt in my mind that it will happen based on my observations inside the semiconductor ecosystem.

There have been some minor changes to the TSMC roadmap. It has been extended out to 2028 adding N3C and A14. The C is a compressed version meaning the yield learning curve is at a point where the process can be further optimized for density.

A14 will certainly be a big topic of discussion at the event. A14 is TSMC’s second generation of nanosheet transistor which is considered a full node (PPA) versus N2: 10-15% speed improvement at the same power, 25-30% power reduction at the same speed, and 1.2X logic density improvement. The first iteration of 14A does not have backside power delivery. It was the same with N2 which was followed by A16 with Super Power Rail (SPR). SPR for A14 is expected in 2029.

The TSMC 16A specs were updated as well. 16A is the first version of SPR for reduced IR drop and improved logic density. This has the transistor connection on the back. SPR is targeted at AI/HPC designs with improved signal routing and power delivery. A16 is on track for production in the second half of 2026. In comparison to N2P, A16 provides an 8-10% speed improvement at the same power, 15-20% power reduction at the same speed.

From what I have heard TSMC N2 is yielding quite well and is on track for production later this year. The big question is who will be the first customer to ship N2 product? Usually it is Apple but word on the street is the iPhones this year will again be using N3. I already have an N3 iPhone so I will skip this generation if that is the case. If Apple does an N2 based iPhone Max Pro this year then count me in!

TSMC N2P is also on track for production in the second half of 2026. As compared to N3E, N2P offers: 18% speed improvement at the same power, a 36% power reduction at the same speed, and a 1.2x density improvement.

The most interesting thing about N2 is the rapid growth of tape-outs between N5, N3, and N2. It really is astounding. Given that TSMC N3 was an absolute landslide for customer tape-outs I had serious doubts if we would ever see a repeat of that success but here we are. Again, in the past mobile was the driver for early tape-outs but now we have AI/HPC as well.

Finally, as Kevin said, TSMC N3 is the last and best FinFET technology available on such a massive scale with N3, N3E, N3P, N3X, N3A, and now N3C. Yet, N2 tape-outs beat N3 in the first year and the second year even more so. Simply amazing. I guess the question is who is NOT using TSMC N2?

The second part of the presentation was on packaging which will be covered in another blog. After the event I can provide even more details and get a feeling for the vibe at the event from the ecosystem. Exciting times!

UPDATE: TSMC is sharing recordings of the presentations HERE.

Also Read:

TSMC Brings Packaging Center Stage with Silicon

IEDM 2025 – TSMC 2nm Process Disclosure – How Does it Measure Up?

TSMC Unveils the World’s Most Advanced Logic Technology at IEDM

IEDM Opens with a Big Picture Keynote from TSMC’s Yuh-Jier Mii


TSMC’s Innovations in Physical Design for Semiconductor Scaling

TSMC’s Innovations in Physical Design for Semiconductor Scaling
by Daniel Nenni on 04-20-2025 at 8:08 am

LC LU TSMC ISPD 2017

In a 2017 ISPD presentation, TSMC Fellow LC Lu outlined critical challenges and innovations in physical design to sustain power, speed, and area scaling trends in semiconductors. As Moore’s Law faces economic hurdles, process-design co-optimization emerges as key to extending it. Lu emphasized application-optimized platforms for mobile, high-performance computing (HPC), automotive, and IoT, balancing area, performance, and power (PPA) with functional safety and ultra-low power needs.

Semiconductor trends highlight slowing primary dimension scaling (metal, gate, fin pitches), making area reduction harder. Innovations like fin depopulation boost cell density by reducing fins from 3-4 in 16nm to 2 in 7nm, easing scaling pressure. This not only increases logic density by up to 3x but also enhances speed-power efficiency: higher-fin cells offer peak speed, while fewer fins excel at same-power speed or same-speed low power. Cell utilization rises from 70% to 80%, aided by power plan optimizations.

Power grid (PG) enhancements are pivotal for logic density. To counter IR drop, PG via counts increase across generations, but shrinking pitches harms routing. Evolving from uniform to dual M1 architectures via top-down or bottom-up co-design allows better cell placement freedom. Power stubs over straps maximize cells under PG, and staggered pins add access points (from 5 to 6), minimizing unused space.

Extreme Ultraviolet (EUV) lithography further densifies routing. Compared to inverse lithography or multiple patterning, EUV single patterning and directed self-assembly (DSA) enable finer pitches (12-16nm half-pitch). Shifting metal:poly pitch from 1:1 to 2:3 provides more metal resources, reducing coupling capacitance and boosting routing tracks, though requiring dual library sets for offsets.

Performance scaling grapples with exponential metal/via resistance growth—up to 3x from 40nm to 5nm—dominating delay (50% BEOL impact at 5nm). Via pillars mitigate this: large drivers, thick upper metals, and pillar structures slash transistor, wire, and via resistance. Automated EDA flows insert electromigration (EM) and performance via pillars across placement, CTS, and routing, reducing BEOL delay impact significantly.

Power scaling leverages ultra-low voltage (ULV) for IoT efficiency, but challenges functionality and variation. Solutions include skew/fine-grained cells, high-stack designs, transmission gates, and multi-bit flops to curb delay degradation. Flop robustness demands high-sigma checks for write paths. Delay variation explodes at low VDD, turning non-Gaussian; new models split distributions into early/late for accurate STA, aligning with Monte Carlo simulations via advanced statistical OCV.

Heterogeneous integration via 3D packaging achieves low-cost, high-performance systems. InFO (Integrated Fan-Out) and CoWoS (Chip-on-Wafer-on-Substrate) outperform traditional SIP/MCM, enabling vertical stacking for better form factors and bandwidth. InFO variants (PoP, Multi-chip) suit small dies (<400mm², <1000 I/Os), while CoWoS handles large HPC integrations (>1000mm², >3000 I/Os). Co-design flows incorporate inter-die DRC/LVS, SI/PI simulations, thermal-aware EM/IR, yielding 12% better thermal dissipation and 5-10% voltage droop reduction in InFO-PoP with IPD.

Machine learning (ML) tackles rising physical design complexity. TSMC’s platform extracts features from APR databases, trains models to predict routing congestion and detours, eliminating biases in traditional EDA heuristics. This enables pre-route optimizations, like accurate ARM A72 clock gating, boosting post-route speed by 40-150MHz with 95% detour prediction accuracy.

In conclusion, these innovations—fin depopulation, EUV, via pillars, ULV modeling, 3D integration, and ML—extend Moore’s Law through EDA-physical design synergy. As nodes shrink, such co-optimizations ensure complex 3D SoCs meet PPA demands, driving future mobile, HPC, and IoT advancements.

TSMC