Array ( [content] => [params] => Array ( [0] => /forum/index.php?threads/exotic-memories.17181/ ) [addOns] => Array ( [DL6/MLTP] => 13 [Hampel/TimeZoneDebug] => 1000070 [SV/ChangePostDate] => 2010200 [SemiWiki/Newsletter] => 1000010 [SemiWiki/WPMenu] => 1000010 [SemiWiki/XPressExtend] => 1000010 [ThemeHouse/XLink] => 1000970 [ThemeHouse/XPress] => 1010570 [XF] => 2021370 [XFI] => 1050270 ) [wordpress] => /var/www/html )
I think mram is already yielding on 22 fdx for gf, and you can buy it right now. According to their roadmap 12fdx should have it and be out, but GF hasn’t said anything about its roadmap or 12fdx since like 2019. I get the feeling they haven’t ramped it since they are still building an ecosystem with 22fdx. Intel has said 16 will have a full range of different memory devices. Rram I know nothing about.
So MRAM needs to be written to multiple times to guarantee a sufficient probability? Doesn't that imply a high write latency?SRAM, and EFLASH poor scaling at <40nm are main drivers, but it's not a 1-to-1 replacement.
STTMRAM dies from high current needed for any decent write speed.
Also, the showstopper is the weird probabilistic write property of MRAM.
Every time you write to an MRAM, there is a chance that it will not flip the cell, and this is inherent to quantum nature of underlying process.
To guarantee 10^18-10^20 error rate comparable to MRAM, you need to degrade MRAM endurance to 10^15, not much better than a good NOR flash.
So MRAM needs to be written to multiple times to guarantee a sufficient probability? Doesn't that imply a high write latency?
12FDX was always aimed to be a denser 22FDX, similar FETs but with a fully double-patterned metal stack. The problem is that it's then trying to compete with FinFET on the things that FinFET is good at (speed, density -- and available at all nodes down to 3nm...) without having the economies of scale or the IP ecosystem, and with no real advantage for the applications that people use 22FDX (or bigger FDSOI) mentioned on the FDSOI thread.I think mram is already yielding on 22 fdx for gf, and you can buy it right now. According to their roadmap 12fdx should have it and be out, but GF hasn’t said anything about its roadmap or 12fdx since like 2019. I get the feeling they haven’t ramped it since they are still building an ecosystem with 22fdx. Intel has said 16 will have a full range of different memory devices. Rram I know nothing about.
MRAM has better endurance than 10^15? Any references for that?To guarantee 10^18-10^20 error rate comparable to MRAM, you need to degrade MRAM endurance to 10^15, not much better than a good NOR flash.
My understanding is that Hf/ZrO2 based ultra-thin films are looking good on depolarization:Were it not for depolarization concerns, FeFETs would be much more attractive than MRAM.
IEDM session 10.7 shows an MRAM from Samsung with 1e14 endurance. Now we are in the zone for general purpose memory. The engineering looks expensive, many layers must be deposited, each column seems to have 10 elements.
The concern was the short (breakdown) fail rate (not quantified, probably embarrassing) and read disturb rate (1e14) which means a disturb (destructive read) could happen within a year.IEDM session 10.7 shows an MRAM from Samsung with 1e14 endurance. Now we are in the zone for general purpose memory. The engineering looks expensive, many layers must be deposited, each column seems to have 10 elements.