UC Berkeley did the heavy lifting:
en.wikipedia.org
The potential of Digh Hisamoto's research on DELTA transistors drew the attention of the
Defense Advanced Research Projects Agency (DARPA), which in 1997 awarded a contract to a research group at
UC Berkeley to develop a deep
sub-micron transistor based on DELTA technology.
[13] The group was led by Hisamoto along with
TSMC's
Chenming Hu. The team made the following breakthroughs between 1998 and 2004.
[14]
- 1998 – N-channel FinFET (17 nm) – Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor, Wen-Chin Lee, Jakub Kedzierski, Erik Anderson, Hideki Takeuchi, Kazuya Asano[15]
- 1999 – P-channel FinFET (sub-50 nm) – Digh Hisamoto, Chenming Hu, Xuejue Huang, Wen-Chin Lee, Charles Kuo, Leland Chang, Jakub Kedzierski, Erik Anderson, Hideki Takeuchi[16]
- 2001 – 15 nm FinFET – Chenming Hu, Yang-Kyu Choi, Nick Lindert, P. Xuan, S. Tang, D. Ha, Erik Anderson, Tsu-Jae King Liu, Jeffrey Bokor[17]
- 2002 – 10 nm FinFET – Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor, David Kyser, Chenming Hu, Tsu-Jae King Liu, Bin Yu, Leland Chang[18]
- 2004 – High-κ/metal gate FinFET – D. Ha, Hideki Takeuchi, Yang-Kyu Choi, Tsu-Jae King Liu, W. Bai, D.-L. Kwong, A. Agarwal, M. Ameen
They coined the term "FinFET" (fin field-effect transistor) in a December 2000 paper,
[19] used to describe a non-planar, double-gate transistor built on an SOI substrate.
[20]