EUV lithography systems are now fully deployed in the high-volume manufacturing of leading edge semiconductor devices. In this paper, we review the performance of ASML’s current generation light sources in the field and preview the next step in EUV source performance for the NXE:3800 system. The NXE:3800 system marks a substantial step forward in scanner productivity, delivering a remarkable increase of (+50 WPH) in throughput, made possible by an increase in EUV source power (to >500W). This significant increase in power was achieved through improvements in the droplet generator, higher power CO2 drive laser, improved collector design, and enhancements in our plasma controls required for higher plasma power. Details of these developments and their impact on system design and performance will be discussed, along with recent high-power performance demonstrations of the overall integrated EUV light source system.
Recently progress of LPP EUV light source is remarkable. Ten years ago, power level is only several 10 W level. At present 250W power level is realized in semiconductor mass production factories1) by ASML. On the other hand, pioneer of this Unique technologies including; combination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied by Gigaphoton2). They have demonstrated high average power >300W EUV power with CO2 laser more than 27kW at output power in cooperation with Gigaphoton and Mitsubishi Electric3). In near future more higher power (>600W) EUV source is required to fit High NA (>0.55) lithography of semiconductor industry. In this paper we will discuss about the Sn plasma dynamics which dominate the EUV emission by using Tomson scattering (TS) measurement4. Recent TS results have revealed whole profiles of electron temperature and ion density in the EUV sources. These results mention that there is still sufficient potential to increase EUV output power and conversion efficiency in near future.
Contrary to expectations, doubling power doesn't mean doubling throughput at same dose (it's less).
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