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Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation
by Fred Chen on 03-02-2023 at 10:00 am

Resolution vs. Die Size Tradeoff Due to EUV Pupil Rotation

The many idiosyncrasies of EUV lithography affect the resolution that can actually be realized. One which still does not get as much attention as it should is the cross-slit pupil rotation [1-3]. This is a fundamental consequence of using rotational symmetry in ring-field optical systems to control aberrations in reflective… Read More


KLAC- Weak Guide-2023 will “drift down”-Not just memory weak, China & logic too

KLAC- Weak Guide-2023 will “drift down”-Not just memory weak, China & logic too
by Robert Maire on 02-06-2023 at 6:00 am

KLAC Tencor SemiWiki

-Business will “drift down” over the course of 2023
-Not just memory is weak- China issue, foundry/logic slowing
-March guide worse than expected (Like Lam)
-Backlog likely saw push outs & cancelations but still long

Good quarter but weak guide

Much as we saw with Lam, KLA reported a beat on the December quarter… Read More


U.S., Japan & Dutch versus China Chips & Memory looks to be in a long downturn

U.S., Japan & Dutch versus China Chips & Memory looks to be in a long downturn
by Robert Maire on 02-01-2023 at 2:00 pm

US Japan China

-US, Japan & Dutch agree to embargo some China chip equip
-Goes beyond just leading edge & will increase negative impact
-China might catch up in decades or invade Taiwan tomorrow
-Why the memory downturn could be longer than expected

Ganging up on China

It appears that the US has put together a coalition of the US, Japan and… Read More


Multiple Monopole Exposures: The Correct Way to Tame Aberrations in EUV Lithography?

Multiple Monopole Exposures: The Correct Way to Tame Aberrations in EUV Lithography?
by Fred Chen on 02-01-2023 at 6:00 am

Multiple Monopole Exposures 1

For a leading-edge lithography technology, EUV (extreme ultraviolet) lithography is still plagued by some fundamental issues. While stochastically occurring defects probably have been the most often discussed, other issues, such as image shifts and fading [1-5], are an intrinsic part of using reflective EUV optics. However,… Read More


ASML – Powering through weakness – Almost untouchable – Lead times exceed downturn

ASML – Powering through weakness – Almost untouchable – Lead times exceed downturn
by Robert Maire on 01-26-2023 at 10:00 am

Robert Maire Bloomberg

-Demand far exceeds supply & much longer than any downturn
-Full speed ahead-$40B in solid backlog provides great comfort
-ASP increase shows strength- China is non issue
-In a completely different league than other equipment makers

Reports a good beat & Guide

Revenues were Euro6.4B with system sales making up Euro4.7B… Read More


Application-Specific Lithography: Sub-0.0013 um2 DRAM Storage Node Patterning

Application-Specific Lithography: Sub-0.0013 um2 DRAM Storage Node Patterning
by Fred Chen on 01-17-2023 at 10:00 am

Application Specific Lithography 1

The pursuit of ever smaller DRAM cell sizes is still active and ongoing. DRAM cell size is projected to approach 0.0013 um2 for the D12 node. Patterning challenges are significant whether considering the use of DUV or EUV lithography. In particular, ASML reported that when center-to-center values reached 40 nm, single patterning… Read More


Secondary Electron Blur Randomness as the Origin of EUV Stochastic Defects

Secondary Electron Blur Randomness as the Origin of EUV Stochastic Defects
by Fred Chen on 01-09-2023 at 10:00 am

Secondary Electron Blur Randomness as the Origin of EUV Stochastic Defects

Stochastic defects in EUV lithography have been studied over the last few years. For years, the Poisson noise from the low photon density of EUV had been suspected [1,2]. EUV distinguishes itself from DUV lithography with secondary electrons functioning as intermediary agents in generating reactions in the resist. Therefore,… Read More


Predicting EUV Stochastic Defect Density

Predicting EUV Stochastic Defect Density
by Fred Chen on 12-04-2022 at 6:00 am

Predicting EUV Stochastic Defect Density

Extreme ultraviolet (EUV) lithography targets patterning pitches below 50 nm, which is beyond the resolution of an immersion lithography system without multiple patterning. In the process of exposing smaller pitches, stochastic patterning effects, i.e., random local pattern errors from unwanted resist removal or lack … Read More


Electron Blur Impact in EUV Resist Films from Interface Reflection

Electron Blur Impact in EUV Resist Films from Interface Reflection
by Fred Chen on 11-08-2022 at 6:00 am

Electron Blur Impact in EUV Resist Films from Interface Reflection

The resolution of EUV lithography is commonly expected to benefit from the shorter wavelengths (13.2-13.8 nm) but in actuality the printing process needs to include Pde the consideration of the lower energy electrons released by the absorption of EUV photons. The EUV photon energy itself has a nominal energy range of 90-94 eV,… Read More


Is ASML Immune from China Impact?

Is ASML Immune from China Impact?
by Robert Maire on 10-21-2022 at 10:00 am

ASML China Immunity

-ASML has great QTR & Outlook & Huge Euro8.9B orders
-Relatively immune from China due to mainly non leading edge
-Monster Euro38B backlog – 60EUV & 375DUV systems in 2023
-5% China risk to 2023- still mainly supply constrained

ASML proves litho’s place at Apex of semiconductor food chain

ASML announced… Read More