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Kinam Kim is a longtime Samsung technologist who has published many excellent articles over the years. He is now the Chairman of Samsung Electronics, and he gave a very interesting keynote address at IEDM.
He began with some general observations:
The world is experiencing a transformation powered by semiconductors that has been… Read More
IBM at IEDMby Scotten Jones on 01-10-2022 at 6:00 amCategories: Events
IBM transferred their semiconductor manufacturing to GLOBALFOUNDRIES several years ago but still maintains a multibillion-dollar research facility at Albany Nanotech. IBM is very active at conferences such as IEDM and appears to have a good public relations department because they get a lot of press.
At the Litho Workshop … Read More
Standard Cell Scaling
Complex logic designs are built up from standard cells, in order to continue to scale logic we need to continually shrink the size of standard cells.
Figure 1 illustrates the dimensions of a standard cell.
Figure 1. Standard Cell Dimensions.
From figure 1 we can see that shrinking standard cell sizes requires… Read More
I was invited to give a plenary address at the SISPAD conference in September 2021. For anyone not familiar with SISPAD it is a premiere TCAD conference. This year for the first time SISPAD wanted to address cost and my talk was “Cost Simulations to Enable PPAC Aware Technology Development”.
For many years the standard in technology… Read More
Anyone who has read my previous articles about IEDM knows I consider it the premier conference on process technology.
Last year due to COVID IEDM was virtual and although virtual offers some advantages the hallway conversations that can be such an important part of the conference are lost. This year IEDM is returning as a live event… Read More
Back in May of 2020 I published some comparisons of the cost to run a TSMC fab in Arizona versus their fabs in Taiwan. I found the fab operating cost based on the country-to-country difference to only be 3.4% higher in the US and then I found an additional 3.8% because of the smaller fab scale. Since that time, I have continued to encounter… Read More
Intel presented yesterday on their plans for process technology and packaging over the next several years. This was the most detailed roadmap Intel has ever laid out. In this write up I will analyze Intel’s process announcement and how they match up with their competitors.
10nm Super Fin (SF)
10nm is now in volume production in three… Read More
At the 2021 VLSI Technology Symposium, Imec presented on Ruthenium (Ru) and Molybdenum (Mo) as alternate Word Line (WL) materials for 3D NAND Flash “First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D NAND Memory Devices”. I had an opportunity to interview one of the authors: Maarten Rosmeulen.… Read More
FinFETs devices are reaching their limits for scaling. Horizontal Nanosheets (HNS) are a type of Gate All Around (GAA) device that offers better scaling and performance per unit area. HNS is the logical next step from FinFETs because HNS processing is similar to FinFETs with a limited number of process changes required.
At the … Read More
At the 2021 Symposium on VLSI Technology and Circuits in June a short course was held on “Advanced Process and Devices Technology Toward 2nm-CMOS and Emerging Memory”. In this article I will review the first two presentations covering leading edge logic devices. The two presentations are complementary and provide and excellent… Read More
The Data Crisis is Unfolding – Are We Ready?