Obscuration-Induced Pitch Incompatibilities in High-NA EUV Lithography

Obscuration-Induced Pitch Incompatibilities in High-NA EUV Lithography
by Fred Chen on 06-19-2022 at 10:00 am

High NA EUV Lithography 1

The next generation of EUV lithography systems are based on a numerical aperture (NA) of 0.55, a 67% increase from the current value of 0.33. It targets being able to print 16 nm pitch [1]. The High-NA systems are already expected to face complications from four issues: (1) reduced depth-of-focus requires thinner resists, which… Read More


The Electron Spread Function in EUV Lithography

The Electron Spread Function in EUV Lithography
by Fred Chen on 06-07-2022 at 6:00 am

Electron Spread EUV

To the general public, EUV lithography’s resolution can be traced back to its short wavelengths (13.2-13.8 nm), but the true printed resolution has always been affected by the stochastic behavior of the electrons released by EUV absorption [1-5].

A 0.33 NA EUV system is expected to have a diffraction-limited point spread… Read More


0.55 High-NA Lithography Update

0.55 High-NA Lithography Update
by Tom Dillinger on 05-31-2022 at 6:00 am

mask infrastructure 0 55

At the recent SPIE Advanced Lithography + Patterning Conference, Mark Phillips from Intel gave an insightful update on the status of the introduction of the 0.55 high numerical aperture extreme ultraviolet lithography technology.  Mark went so far as to assert that the development progress toward high-NA EUV would support … Read More


Demonstration of Dose-Driven Photoelectron Spread in EUV Resists

Demonstration of Dose-Driven Photoelectron Spread in EUV Resists
by Fred Chen on 05-08-2022 at 10:00 am

Demonstration of Dose Driven Photoelectron Spread in EUV Resists

As a consequence of having a ~13.5 nm wavelength, EUV photons transfer ~90% of their energy to ionized photoelectrons. Thus, EUV lithography is fundamentally mostly EUV photoelectron lithography. The actual resolution becomes dependent on photoelectron trajectories.

Photoelectron trajectories in EUV lithography were… Read More


Has KLA lost its way?

Has KLA lost its way?
by Robert Maire on 05-01-2022 at 6:00 am

KLA SPIE 2022

-KLA has another great QTR in face of overwhelming demand
-Supply chain issues obliterated by backlog
-Longer term technology leadership concerns are increasing
-We see limited upside near term & remain cyclically cautious

Another great quarter- demand remains super strong

KLA’s performance remains great as does… Read More


Adding Random Secondary Electron Generation to Photon Shot Noise: Compounding EUV Stochastic Edge Roughness

Adding Random Secondary Electron Generation to Photon Shot Noise: Compounding EUV Stochastic Edge Roughness
by Fred Chen on 04-26-2022 at 6:00 am

Compounding EUV Stochastic Edge Roughness 2

The list of possible stochastic patterning issues for EUV lithography keeps growing longer: CD variation, edge roughness, placement error, defects [1]. The origins of stochastic behavior are now well-known. For a given EUV photon flux into the resist, a limited fraction are absorbed. Since the absorption is less than 5% affected… Read More


Chip Enabler and Bottleneck ASML

Chip Enabler and Bottleneck ASML
by Robert Maire on 04-22-2022 at 6:00 am

ASML Zeiss SemiWiki

-ASML reported an “in line” Q1- Orders remain super strong
-Ongoing supply chain issues will limit growth and upside
-ASML targets 2025 for supply fixes- We are not so sure
-Intel, TSMC, Samsung won’t be able to build all fabs they plan

ASML has “In linesh” Q1, orders still off the charts

ASML reported… Read More


Intel and the EUV Shortage

Intel and the EUV Shortage
by Scotten Jones on 04-13-2022 at 10:00 am

Slide1

In my “The EUV Divide and Intel Foundry Services” article available here, I discussed the looming EUV shortage. Two days ago, Intel announced their first EUV tool installed at their new Fab 34 in Ireland is a tool they moved from Oregon. This is another indication of the scarcity of EUV tools.

I have been tracking EUV system production… Read More


EUV Resist Absorption Impact on Stochastic Defects

EUV Resist Absorption Impact on Stochastic Defects
by Fred Chen on 04-03-2022 at 10:00 am

EUV Resist Absorption Impact on Stochastic Defects 1

Stochastic defects continue to draw attention in the area of EUV lithography. It is now widely recognized that stochastic issues not only come from photon shot noise due to low (absorbed) EUV photon density, but also the resist material and process factors [1-4].

It stands to reason that resist absorption of EUV light, which is … Read More


DUV, EUV now PUV Next gen Litho and Materials Shortages worsen supply chain

DUV, EUV now PUV Next gen Litho and Materials Shortages worsen supply chain
by Robert Maire on 04-01-2022 at 8:00 am

EUV DUV Lithography

-New PUV light source will push litho into Angstrom Era
-Rare earth elements shortages add to supply chain woes
-Could strategic wafer reserve releases lower memory pricing
-Can we cut off/turn off Russian access to chip equipment?

DUV, EUV and now “PUV” to become next generation lithography

Lithography is the locomotive… Read More