In recent advanced nodes, via and cut patterning have constituted a larger and larger portion of the overall BEOL mask count. The advent of SALELE [1,2] caused mask count to increase for EUV as well, resulting in costs no longer being competitive with DUV down to 3nm . Further development by TEL  has shown the possibility for… Read More
Electron beam lithography is commercially used to directly write submicron patterns onto advanced node masks. With the advent of EUV masks and nanometer-scale NIL (nanoimprint lithography), multi-beam writers are now being used, compensating the ultralow throughput of a single high-resolution electron beam with the use… Read More
- This past weeks over-reaction to Canon echoes the Sculpta Scare
- Nanoimprint has made huge strides but is still not at all competitive
- Shows basic lack of understanding of technology by some pundits
- Chip industry has been searching for alternatives that don’t exist
Much ado about nothing much…..
This past week we … Read More
– SPIE EUV & Photomask conference well attended with great talks
– Chip industry focused on next gen High NA EUV & what it impacts
– Do big chips=big masks? Another Actinic tool?
– AI & chip tools, a game changer- China pre-empting more sanctions
The SPIE EUV & Photomask conference in Monterey… Read More
- The memory down cycle is longer/deeper than many thought
- The recovery will be slower than past cycles- a “U” rather than “V”
- AI & new apps don’t make up for macro weakness
- Negative for overall semis & equip- Could China extend downcycle?
Micron report suggests a longer deeper down cycle… Read More
Share your research, challenges, and breakthroughs with colleagues in San Jose
The call for papers is open. Submit your abstract and join other leading researchers who are solving challenges in optical and EUV lithography, patterning technologies, metrology, and process integration for semiconductor manufacturing and … Read More
- Huawei’s 7NM chip? This wasn’t supposed to happen
- Are Chips a weapon for U.S. or China? Role reversal?
- Will Taiwan turn from protected asset to unwanted liability?
- Are sanctions so porous that US has already lost to China?
While EUV is critical to advanced chips there are workarounds
Many people either thought or assumed… Read More
Recent articles have focused much effort on studying the stochastic behavior of secondary electron exposure of EUV resists [1-4]. Here, we consider the implications of extending similar treatments to DUV lithography.
Basic Model Setup
As before, the model uses pixel-by-pixel calculations of absorbed photon dose, followed… Read More
Extreme ultraviolet (EUV) lithography is often represented as benefiting from the 13.5 nm wavelength (actually it is a range of wavelengths, mostly ~13.2-13.8 nm), when actually it works through the action of secondary electrons, electrons released by photoelectrons which are themselves released from ionization by absorbed… Read More
High-NA EUV lithography is the anticipated new lithography technology to be introduced for the 2nm node. Essentially, it replaces the 0.33 numerical aperture of current EUV systems with a higher 0.55 numerical aperture (NA). This allows the projection of smaller spot sizes and smaller pitches, roughly 60% smaller compared … Read More