LRCX- Mediocre, flattish, long, U shaped bottom- No recovery in sight yet-2025?

LRCX- Mediocre, flattish, long, U shaped bottom- No recovery in sight yet-2025?
by Robert Maire on 04-29-2024 at 8:00 am

4d60ca863c5f696715ba448c97835bec

– Lam reports another flat quarter & guide- No recovery in sight yet
– Seems like no expectation of recovery until 2025- Mixed results
– DRAM good- NAND weak- Foundry/Logic mixed-Mature weakening
– Clearly disappointing to investors & stock hoping for a chip recovery

Another Flat Quarter &
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Intel High NA Adoption

Intel High NA Adoption
by Scotten Jones on 04-24-2024 at 6:00 pm

High NA EUV Final Pre Briefing Deck 4.15.24 embargoed til 4.18 at 7am PT (1) Page 07

On Friday April 12th Intel held a press briefing on their adoption of High NA EUV with Intel fellow and director of lithography Mark Phillips.

In 1976 Intel built Fab 4 in Oregon, the first Intel fab outside of California. With the introduction of 300mm Oregon became the only development site for Intel with large manufacturing, development,… Read More


ASML- Soft revenues & Orders – But…China 49% – Memory Improving

ASML- Soft revenues & Orders – But…China 49% – Memory Improving
by Robert Maire on 04-19-2024 at 8:00 am

Fully assembled TWINSCAN EXE 5000

ASML- better EPS but weaker revenues- 2024 recovery on track
China jumps 10% to 49%- Memory looking better @59% of orders
Order lumpiness increases with ASP- EUV will be up-DUV down
“Passing Bottom” of what has been a long down cycle

Weak revenues & orders but OK EPS

Reported revenue was Euro5.3B and EPS of Euro3.11… Read More


Pinning Down an EUV Resist’s Resolution vs. Throughput

Pinning Down an EUV Resist’s Resolution vs. Throughput
by Fred Chen on 02-21-2024 at 8:00 am

Pinning Down an EUV Resist's Resolution

The majority of EUV production is on 5nm and 3nm node, implemented by late 2022. Metal oxide resists have not been brought into volume production yet [1,2], meaning that only organic chemically amplified resists (CARs) have been used instead until now. These resists have a typical absorption coefficient of 5/um [3,4], which means

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Application-Specific Lithography: Avoiding Stochastic Defects and Image Imbalance in 6-Track Cells

Application-Specific Lithography: Avoiding Stochastic Defects and Image Imbalance in 6-Track Cells
by Fred Chen on 02-07-2024 at 6:00 am

Application Specific Lithography

The discussion of any particular lithographic application often refers to imaging a single pitch, e.g., 30 nm pitch for a 5nm-family track metal scenario. However, it is always necessary to confirm the selected patterning techniques on the actual use case. The 7nm, 5nm, or 3nm 6-track cell has four minimum pitch tracks, flanked… Read More


LRCX- In line Q4 & flat guide- No recovery yet- China still 40%- Lags Litho

LRCX- In line Q4 & flat guide- No recovery yet- China still 40%- Lags Litho
by Robert Maire on 01-29-2024 at 6:00 am

Lam Research LCRX

– Lam reported as expected and guided flat- No recovery yet
– Some mix shifts but China still 40% (8X US at 5%)-NVM still low
– HBM is promising but Lam needs a broad memory recovery
– Lam has not seen order surge ASML saw- Likely lagging by 3-4 QTRs

An in line quarter and uninspiring flat guide for Q1

As compared… Read More


ASML – Strong order start on long road to 2025 recovery – 24 flat vs 23 – EUV shines

ASML – Strong order start on long road to 2025 recovery – 24 flat vs 23 – EUV shines
by Robert Maire on 01-26-2024 at 6:00 am

ASML Cleanroom EUV Wafer Stage Training

– ASML orders more than triple sequentially- Utilization increases
– Management remains conservative with flat revenues 2024 vs 2023
– Recovery will be slow, targeting 2025- Long & weak cyclical bottom
– Litho orders are leading indicator of future wider recovery

Strong orders pave the way for
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Non-EUV Exposures in EUV Lithography Systems Provide the Floor for Stochastic Defects in EUV Lithography

Non-EUV Exposures in EUV Lithography Systems Provide the Floor for Stochastic Defects in EUV Lithography
by Fred Chen on 01-18-2024 at 10:00 am

Defocus flare (small)

EUV lithography is a complicated process with many factors affecting the production of the final image. The EUV light itself doesn’t directly generate the images, but acts through secondary electrons which are released as a result of ionization by incoming EUV photons. Consequently, we need to be aware of the fluctuations… Read More


Application-Specific Lithography: Sense Amplifier and Sub-Wordline Driver Metal Patterning in DRAM

Application-Specific Lithography: Sense Amplifier and Sub-Wordline Driver Metal Patterning in DRAM
by Fred Chen on 12-25-2023 at 10:00 am

Varying pitch in metal lines in DRAM periphery

On a DRAM chip, the patterning of features outside the cell array can be just as challenging as those within the array itself. While the array contains features which are the most densely packed, at least they are regularly arranged. On the other hand, outside the array, the regularity is lost, but the in the most difficult cases, … Read More


BEOL Mask Reduction Using Spacer-Defined Vias and Cuts

BEOL Mask Reduction Using Spacer-Defined Vias and Cuts
by Fred Chen on 12-06-2023 at 6:00 am

BEOL Mask Reduction Using Spacer Defined Vias and Cuts

In recent advanced nodes, via and cut patterning have constituted a larger and larger portion of the overall BEOL mask count. The advent of SALELE [1,2] caused mask count to increase for EUV as well, resulting in costs no longer being competitive with DUV down to 3nm [3]. Further development by TEL [4] has shown the possibility for… Read More