I was asked to give a talk at the 2021 ISS conference and the following is a write up of the talk.
The title of the talk is “Logic Leadership in the PPAC era”.
The talk is broken up into three main sections:
- Background information explaining PPAC and Standard Cells.
- A node-by-node comparisons of companies running leading edge logic
… Read More
FDSOI is gaining traction in the market place. At their foundry forum in May, Samsung announced they have 17 FDSOI products in high volume manufacturing (you can read Tom Dilliger’s write up of the Samsung Foundry Forum here). At SEMICON West in July, GLOBALFOUNDRIES (GF) announced FDSOI design wins worth $2 billion dollars in … Read More
The imec technology forum was held in Belgium last week. At the forum I had a chance to sit down with Gary Patton the CTO of GLOBALFOUNDRIES (GF) for an interview and he also presented “Enabling Connected Intelligence – Technology innovation: Enablers for an intelligent future” at the forum. In this article … Read More
“Mobile is the largest platform ever built by humanity”, Christiano Amon, Executive Vice President, Qualcomm Technologies, Inc. and President, Qualcomm CDMA Technologies speaking at the GLOBALFOUNDRIES Technologies Conference (GTC) 2017.… Read More
At Semicon West last week I attended presentations by Soitec and CEA Leti, and had breakfast with CEA Leti CEO Marie Semeria, key members of the Fully Depleted Silicon On Insulator (FDSOI) ecosystem. I have also seen some comments in the SemiWiki forum lately that make me believe there is some confusion on the roles of different companies… Read More
For an industry that drives improvement at an exponential rate it is funny how often something old is new again. Intel went into high volume production on 22nm in 2011, and TSMC and Samsung have both had 20nm technologies in production for several years. And yet, recently we have seen renewed interest in 22nm. GLOBALFOUNDRIES has… Read More
Recently I published two blogs on Fully Depleted Silicon On Insulator (FDSOI) and the potential the technology shows for a variety of low power and wireless applications. In order to produce FDSOI devices, the device layer has to be thin enough to ensure the device is fully depleted and ideally the buried oxide has to be thin enough… Read More
I recently took a look at the current status and future direction of FinFET based logic processes in my Leading Edge Logic Landscape blog. I thought it would be interesting to take a similar look at FDSOI and to compare and contrast the two processes. My Leading Edge Logic Landscape blog is available here.… Read More
On Tuesday, July 12th at SEMICON West I had an opportunity to sit down with Marie Semeria, the CEO of Leti and discuss the status and future of FDSOI. Leti pioneered FDSOI 15 years ago and has been the leading FDSOI research ever since.
Two years ago Leti and ST Micro demonstrated products on 28nm that are cost competitive with bulk technology.… Read More
The development of leading edge semiconductor technology is incredibly expensive, with estimates ranging from a few to several billion dollars for new nodes. The time to develop a leading edge process is also a critical competitive issue with some of the largest opportunities awarded based on who is first to yield on a new node.… Read More