Array
(
    [content] => 
    [params] => Array
        (
            [0] => /forum/index.php?threads/tsmc-to-reduce-euv-layers-for-3nm-as-part-of-cip.14536/page-2
        )

    [addOns] => Array
        (
            [DL6/MLTP] => 13
            [Hampel/TimeZoneDebug] => 1000070
            [SV/ChangePostDate] => 2010200
            [SemiWiki/Newsletter] => 1000010
            [SemiWiki/WPMenu] => 1000010
            [SemiWiki/XPressExtend] => 1000010
            [ThemeHouse/XLink] => 1000970
            [ThemeHouse/XPress] => 1010570
            [XF] => 2021370
            [XFI] => 1050270
        )

    [wordpress] => /var/www/html
)

TSMC to reduce EUV layers for 3nm as part of CIP

Sorry, Intel 4 is 13 layers. So it is 25 layers for N3 and 13 layers for Intel 4.
So Intel 4 is 2 EUV layers less (13) than TSMC N5 (15) but supposedly half-a-node denser?

I somehow doubt that TSMC use EUV layers where they're not needed, and I also doubt that Intel (with no real EUV experience) know better then TSMC (now on their 3rd EUV process *in mass production*) about how many EUV layers are needed to get a high-yielding process -- in fact, precisely the reverse, given Intel's track record.

I'll believe all those Intel 4 numbers when it's in volume production with yield as good as TSMC... ;-)
 
There has always been a large difference in lithography between tsmc foundry and Intel microprocessor. The number of EUV layers depends of the design rules.
 
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