horscht(i)
New member
I am looking for numbers or at least estimation for the footprint (area per bit) and read-out times of mask ROM versus Flash in a given process. The process can be as old as 40nm or even 65nm.
After googling around for an hour the only rather solid statement I could find is "As a consequence, energy/bit can be a factor 20 smaller and read-out 100-fold faster than 16nm flash." (
"100-fold faster" read-out sound a Little dramatic to me, though.
If there ever was a significant difference in footprint, I assume flash has now the upper hand since multi-Level cells are around.
After googling around for an hour the only rather solid statement I could find is "As a consequence, energy/bit can be a factor 20 smaller and read-out 100-fold faster than 16nm flash." (
Chips 2020: A Guide to the Future of Nanoelectronics
, page 245)."100-fold faster" read-out sound a Little dramatic to me, though.
If there ever was a significant difference in footprint, I assume flash has now the upper hand since multi-Level cells are around.