sabarinathan
New member
Hi all,
I have been thinking over this question since long time but not able to figure out exactly.
1. We need to have exact delay model for std cells at lower technology but how do we achieve it?
130nm library (NLDM - say 5% variation with SPICE simulation) characterisation.
130nm library (CCS - say 3% variation with SPCIE simulation) characterisation.
Above mentiond 5% and 3 % variations are based on layout PEX isn't?
if so how does CCS library modeling reduces percentage of variation compare to NLDM?
i can understand CCS is based driver and receiver(load) current model but not able to get a hold on this.
2. Is SPICE simulation being done by same way for 130nm and 40nm or any difference in SPCIE simulation for both?
I have been thinking over this question since long time but not able to figure out exactly.
1. We need to have exact delay model for std cells at lower technology but how do we achieve it?
130nm library (NLDM - say 5% variation with SPICE simulation) characterisation.
130nm library (CCS - say 3% variation with SPCIE simulation) characterisation.
Above mentiond 5% and 3 % variations are based on layout PEX isn't?
if so how does CCS library modeling reduces percentage of variation compare to NLDM?
i can understand CCS is based driver and receiver(load) current model but not able to get a hold on this.
2. Is SPICE simulation being done by same way for 130nm and 40nm or any difference in SPCIE simulation for both?