Array
(
    [content] => 
    [params] => Array
        (
            [0] => /forum/index.php?members/francesco-p.329731/recent-content
        )

    [addOns] => Array
        (
            [DL6/MLTP] => 13
            [Hampel/TimeZoneDebug] => 1000070
            [SV/ChangePostDate] => 2010200
            [SemiWiki/Newsletter] => 1000010
            [SemiWiki/WPMenu] => 1000010
            [SemiWiki/XPressExtend] => 1000010
            [ThemeHouse/XLink] => 1000970
            [ThemeHouse/XPress] => 1010570
            [XF] => 2021370
            [XFI] => 1050270
        )

    [wordpress] => /var/www/html
)

Recent content by francesco.p

  1. F

    Questions regarding semiconductor manufacturing

    Polysilicon is just short for POLYcristalline SILICON. Highly doped polysilicon was once used instead of metal for the gate electrode. There are (were) a few good reasons for this, but you should probably refer to a solid reference book instead on multiple YT videos if you want to understand a...
  2. F

    Questions regarding semiconductor manufacturing

    Hi, I see a major problem in your pdf: in step 7, n-doped silicon cannot magically appear in the voids of step 6 (certainly not as a consequence of PR removal). As a matter of fact, in step 6 there is no reason to etch away that bit of silicon below the oxide. Doping (typically performed by ion...
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