Webinar: Prototyping Atomistic Nanoscale Devices
OnlineLearn How Victory Atomistic TCAD Solution Can Help You Succeed at Prototyping Atomistic Nanoscale Devices Ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. Thanks to Victory Atomistic’s combination of non-equilibrium Green’s functions (NEGF) and state-of-the-art band structure calculations, versatile, …
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