hip webinar automating integration workflow 800x100 (1)
WP_Term Object
(
    [term_id] => 89
    [name] => FinFET
    [slug] => finfet
    [term_group] => 0
    [term_taxonomy_id] => 89
    [taxonomy] => category
    [description] => 
    [parent] => 0
    [count] => 223
    [filter] => raw
    [cat_ID] => 89
    [category_count] => 223
    [category_description] => 
    [cat_name] => FinFET
    [category_nicename] => finfet
    [category_parent] => 0
    [is_post] => 
)

Contact over Active Gate Process Requirements for 5G

Contact over Active Gate Process Requirements for 5G
by Tom Dillinger on 07-01-2020 at 6:00 am

frequency 5G

Summary
A recent process enhancement in advanced nodes is to support the fabrication of contacts directly on the active gate area of a device.  At the recent VLSI 2020 Symposium, the critical advantages of this capability were highlighted, specifically in the context of the behavior of RF CMOS devices needed for 5G designs.

IntroductionRead More


Multi-Vt Device Offerings for Advanced Process Nodes

Multi-Vt Device Offerings for Advanced Process Nodes
by Tom Dillinger on 06-26-2020 at 6:00 am

Ion Ioff

Summary
As a result of extensive focus on the development of workfunction metal (WFM) deposition, lithography, and removal, both FinFET and gate-all-around (GAA) devices will offer a wide range of Vt levels for advanced process nodes below 7nm.

Introduction
Cell library and IP designers rely on the availability of nFET and pFET… Read More


Design Technology Co-Optimization (DTCO) for sub-5nm Process Nodes

Design Technology Co-Optimization (DTCO) for sub-5nm Process Nodes
by Tom Dillinger on 06-23-2020 at 6:00 am

scaled metal resistance

Summary
Design Technology Co-Optimization (DTCO) analysis was pursued for library cell PPA estimates for gate-all-around (GAA) devices and new metallurgy options.  The cell design and process recommendations are a bit surprising.

Introduction
During the “golden years” of silicon technology evolution that applied Dennard… Read More


Feature-Selective Etching in SAQP for Sub-20 nm Patterning

Feature-Selective Etching in SAQP for Sub-20 nm Patterning
by Fred Chen on 06-02-2020 at 10:00 am

Feature Selective Etching in SAQP for Sub 20 nm Patterning

Self-aligned quadruple patterning (SAQP) is the most widely available technology used for patterning feature pitches less than 38 nm, with a projected capability to reach 19 nm pitch. It is actually an integration of multiple process steps, already being used to pattern the fins of FinFETs [1] and 1X DRAM [2]. These steps, shown… Read More


Talking Sense With Moortec…Are You Listening?!

Talking Sense With Moortec…Are You Listening?!
by Tim Penhale-Jones on 05-04-2020 at 10:00 am

Ear no evil

It almost doesn’t matter what your job may be, whether in the public sector or a private company, or how technical or how dangerous, many of life’s adages and sayings can be interpreted to have some direct meaning for all of us.

Over the years in our personal lives, we have been constantly advised that prevention is better than cure…certainly… Read More


Tracing Technology’s Evolution with Patents

Tracing Technology’s Evolution with Patents
by Arabinda Das on 04-23-2020 at 10:00 am

Figure 1

We live in an age of abundant information. There is a tremendous exchange of ideas crisscrossing the world enabling new innovative type of products to pop up daily. Therefore, in this era there is a greater need to understand competitive intelligence. Corporate companies today are interested in what other competitors are brewing… Read More


Advanced CMOS Technology 2020 (The 10/7/5 NM Nodes)

Advanced CMOS Technology 2020 (The 10/7/5 NM Nodes)
by Daniel Nenni on 01-28-2020 at 10:00 am

Our friends at Threshold Systems have a new class that may be of interest to you. It’s an updated version of the Advanced CMOS Technology class held last May. As part of the previous class we did a five part series on The Evolution of the Extension Implant which you can see on the Threshold Systems SemiWiki landing page HERE. And… Read More


ANSYS, TSMC Document Thermal Reliability Guidelines

ANSYS, TSMC Document Thermal Reliability Guidelines
by Bernard Murphy on 01-01-2020 at 6:00 am

Automotive Reliability Guide min

Advanced IC technologies, 5nm and 7nm FinFET design and stacked packaging, are enabling massive levels of integration of super-fast circuits. These in turn enable much of the exciting new technology we hear so much about: mobile gaming and ultra-high definition mobile video through enhanced mobile broadband in 5G, which requires… Read More


IEDM 2019 – TSMC 5nm Process

IEDM 2019 – TSMC 5nm Process
by Scotten Jones on 12-16-2019 at 10:00 am

IEDM is in my opinion the premiere conference for information on state-of-the-art semiconductor processes. In “My Top Three Reasons to Attend IEDM 2019” article I singled out the TSMC 5nm paper as a key reason to attend.

IEDM is one of the best organized conferences I attend and as soon as you pick up your badge you are handed a memory… Read More


My Top Three Reasons to Attend IEDM 2019

My Top Three Reasons to Attend IEDM 2019
by Scotten Jones on 10-11-2019 at 6:10 am

The International Electron Devices Meeting is a premier event to learn about the latest in semiconductor process technology. Held every year in early December is San Francisco this years conference will be held  from Decembers 7th through December 11th. You can learn more about the conference at their web site here.

This is a must… Read More