Banner 800x100 0810
WP_Term Object
(
    [term_id] => 89
    [name] => FinFET
    [slug] => finfet
    [term_group] => 0
    [term_taxonomy_id] => 89
    [taxonomy] => category
    [description] => 
    [parent] => 0
    [count] => 226
    [filter] => raw
    [cat_ID] => 89
    [category_count] => 226
    [category_description] => 
    [cat_name] => FinFET
    [category_nicename] => finfet
    [category_parent] => 0
    [is_post] => 
)

Designing AI Accelerators with Innovative FinFET and FD-SOI Solutions

Designing AI Accelerators with Innovative FinFET and FD-SOI Solutions
by Daniel Nenni on 07-29-2020 at 10:00 am

Globalfoundries AI Webinar Hiren Majmudar

I had the pleasure of spending time with Hiren Majmudar in preparation for the upcoming AI Accelerators webinar. As far as webinars go this will be one of the better ones we have done. Hiren has deep experience in both semiconductors and EDA during his lengthy career at Intel and now with a pure play foundry. He is intelligent, personable,… Read More


How About a Faster Fast SPICE? Much Faster!

How About a Faster Fast SPICE? Much Faster!
by Tom Simon on 07-22-2020 at 10:35 am

Analog FastSPICE eXTreme

When Analog FastSPICE was first introduced in 2006 it changed the landscape for high performance SPICE simulation. During the last 14 years it has been used widely to verify advanced nanometer designs. Of course, since then the most advanced designs have progressed significantly, making verification even more difficult. Just… Read More


Staying on the Right Side in Worst Case Conditions – Performance (Part 2)

Staying on the Right Side in Worst Case Conditions – Performance (Part 2)
by Tim Penhale-Jones on 07-02-2020 at 10:00 am

Moortec Part 2 Talking Sense

In this, the second part of a two-part series we delve further into defining worst case, this time focusing specifically on device performance.

In the last blog we talked about the steady increase in power density per unit silicon area and how worst case is definitely getting worse. We discussed how in each new FinFET node the dynamic… Read More


Contact over Active Gate Process Requirements for 5G

Contact over Active Gate Process Requirements for 5G
by Tom Dillinger on 07-01-2020 at 6:00 am

frequency 5G

Summary
A recent process enhancement in advanced nodes is to support the fabrication of contacts directly on the active gate area of a device.  At the recent VLSI 2020 Symposium, the critical advantages of this capability were highlighted, specifically in the context of the behavior of RF CMOS devices needed for 5G designs.

IntroductionRead More


Multi-Vt Device Offerings for Advanced Process Nodes

Multi-Vt Device Offerings for Advanced Process Nodes
by Tom Dillinger on 06-26-2020 at 6:00 am

Ion Ioff

Summary
As a result of extensive focus on the development of workfunction metal (WFM) deposition, lithography, and removal, both FinFET and gate-all-around (GAA) devices will offer a wide range of Vt levels for advanced process nodes below 7nm.

Introduction
Cell library and IP designers rely on the availability of nFET and pFET… Read More


Design Technology Co-Optimization (DTCO) for sub-5nm Process Nodes

Design Technology Co-Optimization (DTCO) for sub-5nm Process Nodes
by Tom Dillinger on 06-23-2020 at 6:00 am

scaled metal resistance

Summary
Design Technology Co-Optimization (DTCO) analysis was pursued for library cell PPA estimates for gate-all-around (GAA) devices and new metallurgy options.  The cell design and process recommendations are a bit surprising.

Introduction
During the “golden years” of silicon technology evolution that applied Dennard… Read More


Feature-Selective Etching in SAQP for Sub-20 nm Patterning

Feature-Selective Etching in SAQP for Sub-20 nm Patterning
by Fred Chen on 06-02-2020 at 10:00 am

Feature Selective Etching in SAQP for Sub 20 nm Patterning

Self-aligned quadruple patterning (SAQP) is the most widely available technology used for patterning feature pitches less than 38 nm, with a projected capability to reach 19 nm pitch. It is actually an integration of multiple process steps, already being used to pattern the fins of FinFETs [1] and 1X DRAM [2]. These steps, shown… Read More


Talking Sense With Moortec…Are You Listening?!

Talking Sense With Moortec…Are You Listening?!
by Tim Penhale-Jones on 05-04-2020 at 10:00 am

Ear no evil

It almost doesn’t matter what your job may be, whether in the public sector or a private company, or how technical or how dangerous, many of life’s adages and sayings can be interpreted to have some direct meaning for all of us.

Over the years in our personal lives, we have been constantly advised that prevention is better than cure…certainly… Read More


Tracing Technology’s Evolution with Patents

Tracing Technology’s Evolution with Patents
by Arabinda Das on 04-23-2020 at 10:00 am

Figure 1

We live in an age of abundant information. There is a tremendous exchange of ideas crisscrossing the world enabling new innovative type of products to pop up daily. Therefore, in this era there is a greater need to understand competitive intelligence. Corporate companies today are interested in what other competitors are brewing… Read More


Advanced CMOS Technology 2020 (The 10/7/5 NM Nodes)

Advanced CMOS Technology 2020 (The 10/7/5 NM Nodes)
by Daniel Nenni on 01-28-2020 at 10:00 am

Our friends at Threshold Systems have a new class that may be of interest to you. It’s an updated version of the Advanced CMOS Technology class held last May. As part of the previous class we did a five part series on The Evolution of the Extension Implant which you can see on the Threshold Systems SemiWiki landing page HERE. And… Read More