IMEC Technology Forum (ITF) – EUV When, Not If

IMEC Technology Forum (ITF) – EUV When, Not If
by Scotten Jones on 05-28-2016 at 7:00 am

For me personally EUV has been something of a roller coaster ride over the last several years. I started out a strong believer in EUV but then at the SPIE Advanced Lithography Conference in 2014 TSMC gave a very negative assessment of EUV, and there was a SEMATECH paper on high NA EUV that struck me as extremely unlikely to succeed. I … Read More


IMEC Technology Forum (ITF) – IC Innovation

IMEC Technology Forum (ITF) – IC Innovation
by Scotten Jones on 05-25-2016 at 7:00 am

IMEC is a technology research center located in Belgium that is one of the premier semiconductor research centers in the world today. The IMEC Technology Forum (ITF) is a two-day event attended by approximately 1,000 people to showcase the work done by IMEC and their partners.

Luc Van Den Hove is the president and CEO of IMEC and he… Read More


3D NAND – Moore’s Law in the third dimension

3D NAND – Moore’s Law in the third dimension
by Scotten Jones on 05-07-2016 at 4:00 am

For more than a decade 2D NAND has been the leading driver of lithography shrinks, for example, Samsung went from 120nm in 2003 to 16nm in 2014 with shrinks on an almost yearly basis, but the shrinks came at a price. At 16nm Self Aligned Quadruple Pattering (SAQP) was required for the most critical layers and patterning related costs… Read More


EUV is coming but will we need it?

EUV is coming but will we need it?
by Scotten Jones on 04-12-2016 at 4:00 pm

I have written multiple articles about this year’s SPIE Advanced Lithography Conference describing all of the progress EUV has made in the last year. Source power is improving, photoresists are getting faster, prototype pellicles are in testing, multiple sites around the world are exposing wafers by the thousands and more. Read More


10nm SRAM Projections – Who will lead

10nm SRAM Projections – Who will lead
by Scotten Jones on 03-25-2016 at 12:00 pm

At ISSCC this year Samsung published a paper entitled “A 10nm FinFET 128Mb SRAM with Assist Adjustment System for Power, Performance, and Area Optimization. In the paper Samsung disclosed a high density 6T SRAM cell size of 0.040µm[SUP]2[/SUP]. I thought it would be interesting to take a look at how this cell size stacks … Read More


SPIE – Interview with Greg Mcintyre of IMEC

SPIE – Interview with Greg Mcintyre of IMEC
by Scotten Jones on 03-15-2016 at 7:00 am

One of the things I really like about major technical conferences is the opportunity to meet with people for networking and interviews. On Wednesday at the Advanced Lithography Conference I had the opportunity to interview Greg Mcinttyre, the director of advanced patterning at IMEC.

IMEC researchers are the first author on 32… Read More


Intel EUV Photoresist Progress and ASML High NA EUV

Intel EUV Photoresist Progress and ASML High NA EUV
by Scotten Jones on 03-10-2016 at 4:00 pm

SPIE Days 3 and 4:

Anna Lio of Intel presented EUV resists: What’s next?

Intel wants to insert EUV at 7nm but it has to be ready and economical. Critical Dimension Uniformity (CDU), Line Width Roughness (LWR) and edge placement/stochastics are all stable on 22nm, 14nm and 10nm pilot lines.… Read More


Coventor ASML IMEC: The last half nanometer

Coventor ASML IMEC: The last half nanometer
by Scotten Jones on 01-19-2016 at 4:00 pm

On Tuesday evening December 8[SUP]th[/SUP] at IEDM, Coventor held a panel discussion entitled the “The last half nanometer”. Coventor is a leading provider of simulation software used to design processes. This is my third year attending the Coventor panel discussion at IEDM and they are always excellent with very strong panels… Read More