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Phil Kaufman Award Recipient 2013: Chenming Hu

Phil Kaufman Award Recipient 2013: Chenming Hu
by Paul McLellan on 04-03-2013 at 2:15 am
Categories: EDA, Events

This year’s recipient of the Kaufman Award is Dr Chenming Hu. I can’t think of a more deserving recipient. He is the father of the FinFET transistor which is clearly the most revolutionary thing to come along in semiconductor for a long time. Of course he wasn’t working alone but he was the leader of the team at UC Berkeley that developed the key structures that keep power under control and so allow us to continue to scale process nodes.

In the past, the Kaufman Award recipient has been finalized in the summer and actually awarded at a special dinner in the fall. This year is different. The award will take place at DAC in Austin on Sunday evening. The award will be presented by Klaus Schuegraf, Group Vice President of EUV Product Development at Cymer, Inc.

A quick bio of Dr Hu:In a professional career spanning four decades, including over thirty years as a professor of electrical engineering and computer science at UC Berkeley, Dr. Hu has advanced semiconductor technologies through his nearly one thousand research publications including four books, led or helped build leading companies in the industry, and trained hundreds of graduate students. His students occupy leadership positions in industry and academia. Dr. Hu received a bachelor degree from National Taiwan University, masters and PhD degrees from UC Berkeley. He has served on the faculty of MIT and UC Berkeley as well as the chief technology officer for TSMC, the world’s largest semiconductor foundry. He founded Celestry Design Technologies, an EDA company that was later acquired by Cadence Design Systems. He was elected to the US National Academy of Engineering in 1997, the Academia Sinica in 2004, and the Chinese Academy of Sciences in 2007. He received the IEEE Andrew S. Grove Award, the Don Pederson Award and the Jun-Ichi Nishizawa Medal for his contributions to MOSFET device, technology and circuit design. Among his many other awards is UC Berkeley’s highest honor for teaching, the Berkeley Distinguished Teaching Award. Dr. Hu served as a board chairman of the nonprofit East Bay Chinese School and currently serves on the board of the nonprofit Friends of Children with Special Needs.


Often the Kaufman award is for work that had a major influence on EDA or semiconductor many years ago, although of course like Newton (Isaac, not Richard) almost said, today’s EDA stands on the shoulders of yesterday’s giants. Certainly Dr Hu’s work on device modeling has had that sort of effect. But it is hard to imagine a more timely award than this, nor to better what Aart de Geus, chairman of the award selection committee, said:
“Recognizing Chenming Hu the very year in which the entire EDA, IP, and Semiconductor industry is unleashing the next decade of IC design through the 16/14nm FinFET generation is not a coincidence, but illustrates how a great contributor can impact an entire industry!”

The full press release is on the EDAC website here.

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TSMC to Talk About 10nm at Symposium Next Week

TSMC to Talk About 10nm at Symposium Next Week
by Daniel Nenni on 04-02-2013 at 8:05 pm
Categories: EDA, Foundries, FPGA, TSMC

Given the compressed time between 20nm and 16nm, twelve months versus the industry average twenty four months, it is time to start talking about 10nm, absolutely. Next Tuesday is the 19th annual TSMC Technology Symposium keynoted of course by the Chairman, Dr. Morris Chang.

Join the 2013 TSMC Technology Symposium. Get the latest on:

  • TSMC’s 20nm, 16nm, and below process development status including FinFet and advanced lithography insights
  • TSMC’s new High-Speed Computing, Mobile Communications, and Connectivity & Storage technology development
  • TSMC’s robust Specialty Technology portfolio that includes CMOS Image Sensor (CIS), Embedded Flash, Power IC and MEMS
  • TSMC’s GIGAFAB™ programs and improvements that enhance time-to-volume
  • TSMC’s 18-inch manufacturing technology development
  • TSMC’s Advanced Backend Technology for 3D-IC, CoWoS (Chip-on-Wafer-on-Substrate), and BOT (Bump-on-Trace)
  • New Design Enablement Flows and Design Services on TSMC’s Open Innovation Platform®

REGISTER HERE

TSMC takes this opportunity each year to let customers know what is coming and get feedback on some of the challenges we will face in the coming process technologies. I remember 2 years ago when TSMC asked customers openly if they were ready for FinFETs. The answer was mixed, the mobile folks definitely said yes but the high performance people were not as excited. Here we are, two years later, with FinFET test chips taping out. So yes, these conferences are important. This is the purest form of collaboration and SemiWiki is happy to be part of it.

TSMC will also let us know that 20nm is not just on schedule but EARLY. They have been working around the clock to make sure our iPhone6s arrive on time so don’t expect any 20nm delays. In fact, recent news out of Hsinhcu says TSMC will begin installing 20nm production equipment in Fab 14 two months early of the June 2013 target. 20nm is also the metal fabric for 16nm FinFETs so expect no delays there either.

The COWOS update will be interesting. Liam Madden, Xilinx Vice President of FPGA development, did the keynote at the International Symposium on Physical Systems (ISPD) last month and three-dimensional integration was the focus on the kickoff day. EETimes did a nice write up on it: 3-D Integration Takes Spotlight at ISPD:

“For many years, designers kept digital-logic, -memory and analog functions on separate chips—each taking advantage of different process technologies,” said Madden. “On the other side are system-on-chip [SoC]solutions, which integrate all three functions on the same die. However now there is a third alternative that takes advantage of both worlds—namely 3-D stacking.”


3D transistors plus 3D IC integration will keep the fabless semiconductor moving forward at a rapid pace. If you would like to learn more, Ivo Bolsens, CTO of Xilinx, will be keynoting the Electronic Design Processing Symposium in Monterey, CA this month. The abstract of his keynote is HERE.

There is also a 3D IC panel “Are we there yet?” moderated by Mr 3D IC himself Herb Reiter. Herb will be joined by Dusan Petranovic of Mentor Graphics, Brandon Wang of Cadence, Mike Black of Micron, and Gene Jakubowski of E-System Design. Abstracts are HERE. Register today, room is limited!

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Intelligent tools for complex low power verification

Intelligent tools for complex low power verification
by Pawan Fangaria on 04-02-2013 at 8:05 pm
Categories: EDA, Synopsys

The burgeoning need of high density of electronic content on a single chip, thereby necessitating critical PPA (Power, Performance, Area) optimization, has pushed the technology node below 0.1 micron where static power becomes equally relevant as dynamic power. Moreover, multiple power rails run through the circuit at different voltages catering to analog as well as digital portions of the design. Pins in a gate can be driven by power rails at different voltages. IP blocks such as ARM micro-processors typically come with multiple power rails and also in-built power domains for power management of the blocks. The network according to its logical portions driven by particular supply nets is divided into different power domains, all of which may not be active at the same time. Any un-required domain can remain off hence saving the power. Various techniques and different types of multi-rail cells such as level shifters, power switches, isolation cells etc. are employed to manage power.

Tools must be capable of dealing with multiple power rails and intelligently associating logic with their respective supply nets. That would mean relating to the voltage levels at various nodes at which the design is operating. Also the connectivity and constraint between supply net and power pin, which depend on the context in which the multi-rail cell has been instantiated, needs to be captured. IPs can have separate internal power switches and logic divided into multiple power regions complicating the matter further.

Synopsys’s Eclypse Low Power Solution provides state-of-the-art verification tools MVSIM and MVRC and necessary infrastructure for complete low power verification. MVSIM accurately verifies all power transitions in succession through various voltage levels. MVRC statically checks for correct implementation of power management scheme. The system provides a comprehensive solution for verifying multi-rail cells at RTL, netlist and at PG-netlist stages of the design flow.

Eclypsecaptures cell level information such as logic to power pin association in Synopsys’s existing Liberty format enhanced with standard low power attributes thus providing consistent, integrated platform for the overall design flow enabling designers work independently at different levels such as chip, RTL or cell level in the flow. Chip level information such as chip-level power rail connection with cell-level power pins is provided in power intent file using UPF (Unified Power Format, IEEE 1801 standard). By using UPF a designer can define complete power architecture of the design; partition the design and assign blocks to various power domains which enable MVSIM and MVRC to infer power pin connections with associated logic. For hierarchical flow, Eclypse provides simple commands to associate inputs and outputs of a block to its power pins.

[Example – multi-rail design]

MVSIM accounts for right analog levels of voltages at various pins and hence can simulate different power techniques such as power gating, dynamic voltage scaling, state retention etc. For IPs it can detect available power-aware models and automatically replace the non-power-aware simulation models with the corresponding power-aware models. It also provides option to choose between power-aware or non-power-aware mode depending on the simulation requirement.

[MVSIM output of multi-rail design – with island_V3 off, instance3 output is corrupted]

MVRC verifies static power management of the design taking care of right connection between pins and their supply nets, right insertions and connections of low power structures like level shifters, power switches, retention registers etc. At RTL level, it combines the cell level information from the library with the chip level information available in the UPF format to determine the associated supply net for each node in the design and report any architectural issues or missing/redundant isolation/level-shifter policies in UPF. Similarly it can check netlist after synthesis or post layout for right power pin connectivity and missing/redundant cells with respect to policies defined in UPF.

A very nice detailed description about the methodology has been provided by Synopsys in its white paper located at Low Power Verification for Multi-rail Cells

Considering analog and digital designs to co-exist with increasing design size and complexity, operating at different voltage levels, it’s inevitable to go without multi-rails that introduce its own challenges to low power verification. Eclypse along with MVSIM and MVRC incrementally adds that extra intelligence into their system of library and chip level infrastructure including UPF to provide a comprehensive solution for static and dynamic power simulation and verification of multi-rail low power circuits.

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What really means high reliability for OTP NVM?

What really means high reliability for OTP NVM?
by Eric Esteve on 04-02-2013 at 4:04 am
Categories: IP, Sidense

Normal operation range for a Semiconductor device is not made equal for systems… If you consider a CPU running inside an aircraft engine control system, this device should operate at temperature ranged between -55°C and +125°C, when an Application Processor for smartphone is only required to operate in the 0°C to +70°C range. When Sidense announce that their OTP macros are fully qualified for -40ºC to 150°C read and field-programmable operations for TSMC’s 180nm BCD 1.8/5V/HV and G 1.8/5V processes, this represent a design challenge probably as difficult to meet that, for example, pushing a Cortex A9 ARM CPU embedded in a 28 nm Application Processor to run at 3 GHz instead of 1.5 GHz.

My very first job was in a characterization department and, even if the technology was CMOS 2 micron, the physics’ laws are still the same today, on a 28 nm or 180 nm technology. Both Temperature and Voltage are used to stress Silicon devices, in order to push it to their operating limits much faster. If you increase ambient temperature, a circuit will operate at lower frequency (and performance), and will be degraded much faster. Increasing the operating voltage will also “help” degrading the chip faster. The type of defects generated by Temperature and Voltage stress are for example:

  • Electro-migration, affecting the metal lanes in charge of connecting transistors; the metal atoms are physically moving as a consequence of the Electric field, leading interconnects to break. The temperature acting as an accelerator.

  • Oxide breakdown,affect the Silicon thin oxide (SiO2) located between the gate and the channel, at the hearth of the transistor. Both Temperature and Voltage accelerates oxide breakdown. This is a defect in regular transistors, but this effect is also used in a positive way in Non Volatile Memory (NVM), as you will program the memory cell by trapping charges in an isolated location, by breaking the oxide one time, and one time only, so the name One Time Programmable (OTP).

  • Leakage current:increasing the ambient temperature will increase the Brownian motion, so the leakage current. Leakage current is usually the first enemy of NVM, because the memory cell capability of retaining charge for a long time has a direct impact on the NVM reliability, the amount of alien charge joining -or leaving- the cell due to leakage current could change the stored value, “0” becoming “1” and reverse. But not for Sidense 1T-OTP NVM cell:

In fact, Sidense 1T-Fuse™ technology is based on a one transistor non-volatile memory cell that does not rely on charge storage, rendering a secure cell that can not be reverse engineered. The 1T-Fuse™ is smaller than any alternative NVM IP manufactured in a standard-logic CMOS process. The OTP can be programmed in the field, during wafer or production testing. In fact, the trimming requirement becomes more important as process nodes shrink due to the increased variability of analog circuit performance parameters at smaller processes, due to both random and systematic variations in key manufacturing steps. This manifests itself as increasing yield loss when chips with analog circuitry migrate to smaller process nodes since a larger percentage of analog blocks on a chip will not meet design specifications due to variability in process parameters and layout.

Examples where trimming is used include automotive and industrial sensors, display controllers, and power management circuits. OTP technology can be implemented in several chips used to build “life critical” systems: Brake calibration, Tire pressure, Engine control or temperature or even Steering calibration… The field-programmability of Sidense’s OTP allows these trim and calibration settings to be done in-situ in the system, thus optimizing the system’s operation. You can implement trimming and calibration of circuits such as analog amplifiers, ADCs/DACs and sensor conditioning. There are also many other uses for OTP, both in automotive and in other market segments, including microcontrollers, PMICs, and many others.

Sidense 1T-OTP has been fully qualified for automotive temperature range, supporting AEC-Q100 Grade 0 applications on TSMC 180nm BCD process. That means that Sidense NVM IP can support applications that require reliable operation and long-life data retention in high-temperature environments. We have seen on the few above examples how Electromigration, Oxyde Breakdown or leakage current can severely impact semiconductor devices under high temperature and/or high voltage conditions. This qualification of Sidense 1T-OTP is a great proof of robustness for this NVM IP design. We can expect the automotive segment chip makers to adopt it, because they have to select a qualified IP, and we also think that chip makers serving other segments should also take benefit of such a robust and proven design, even if they will implement the NVM IP in smaller technology nodes, down to 40 nm.

Eric Esteve from IPNEST

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TSMC Tapes Out First 64-bit ARM

TSMC Tapes Out First 64-bit ARM
by Paul McLellan on 04-02-2013 at 2:15 am
Categories: Arm, EDA, Foundries, IP, TSMC

TSMC announced today that together with ARM they have taped out the first ARM Cortex-A57 64-bit processor on TSMC’s 16nm FinFET technology. The two companies cooperated in the implementation from RTL to tape-out over six months using ARM physical IP, TSMC memory macros, and a commercial 16nm FinFET tool chain enabled by TSMC’s open innovation platform (OIP).

ARM announced the Cortex-A57 along with the new ARMv8 instruction architecture back at the end of October last year, along with the Cortex-A53 which is a low-power implementation. The two cores can be combined in the big.LITTLE configuration to combine high performance with power efficiency.

Since the beginning, ARM processors have been 32 bit, even back when many controllers in markets like mobile were 16 bit or even 8 bit. This is the first of the new era of 64-bit ARM processors. These are targeted at datacenters and cloud computing, and so is a much more head-on move into Intel’s core market. Of course, Intel is also trying, with Atom, to get into mobile where ARM remains the king. I doubt that this processor will be used in mobile for many years. There is a rule of thumb that what is used on the desktop migrates into mobile 5 years later.


TSMC have been working with ARM for several process nodes over many years. At 40nm they had optimized IP. Then at 28nm they taped out a 3GHz ARM Cortex-A9. At 20nm it was a multi-core Cortex-A15. Now, at 16nm, a Cortex-A57.

This semiconductor process is basically one with the power and drive advantages of FinFET transistors, but with the more mature 20nm metal fabric that does not require excessive double patterning and the attendant extra cost. This process is 2X the gate density of 28nm with 30+% speed improvement and power at least 50% less. This 16FF process enters risk-production at the end of this year. Everything needed for doing design from both TSMC and its ecosystem partners is available now for early adopters.

As I talked about last week when Cliff Hou of TSMC presented a keynote at SNUG, modern processes don’t allow all the development to be serialized. The process, the design tools and the IP needs to be developed in parallel. This test chip is a big step, since it is a tapeout of an advanced core very early in the life-cycle of the process. In addition to being a proof of concept it will offer opportunities to learn all the way through the design and manufacturing process.

Last year, TSMC had capacity to produce 15.1 million 8-inch equivalent wafers. If my calculation is correct that is over 1000 acres of silicon. That’s a pretty big farm.

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GF, Analog and Singapore

GF, Analog and Singapore
by Paul McLellan on 04-01-2013 at 5:35 pm
Categories: Foundries, GlobalFoundries

The world is analog and despite enormous SoCs in the most leading-edge process node being the most glamorous segment of the semiconductor industry, it turns out that one of the fastest growing segments is actually analog and power chips in older process technologies. Overall, according to Semico, analog and power ICs, including discretes, are a $45B market today and growing at close to a 15% CAGR, faster than the overall semiconductor market.

As a business, analog is especially attractive. Not just because it is growing faster than the overall semiconductor market, but also because, except for the most advanced mixed-signal SoCs (such as cell-phone modems), analog typically doesn’t use the most advanced semiconductor manufacturing technology. Accuracy rather than raw speed is typically what makes an analog design difficult. Analog design is more of an art than a science, with some of the smartest designers. This makes it impossible to move a design quickly from one fab to another or from one technology node to the next. So the analog business is characterized by long product cycles sometimes measured in decades.

In digital design, most of the differentiation in the product is in the design rather than in the semiconductor process itself. That is not true in analog where a good foundry can partner with its customers to create real value in the silicon itself. This will continue due to the increasing need for power-efficient analog, increased density and generally providing a higher quality product at lower cost.

Many markets that require a high analog and power content are heavily safety oriented. Most obviously, medical, automotive and mil-aero. This puts a premium on having solid manufacturing technology that can pass stringent quality and reliability qualification.

Further, there is increasingly a voltage difference between the SoCs that perform the major computation, which typically are running below 1V today, and the sensors, actuators, antennas and power supplies which require anything from 5V up to hundreds of volts. This creates an opportunity for analog using non-CMOS processes such as BCD (Bipolar-CMOS-DMOS) and for varieties that support even higher voltages for segments such as lighting, as the switch from incandescent to LED gradually takes place.

GLOBALFOUNDRIES addresses these markets with a platform-based product strategy accompanied with an investment strategy to put appropriate capacity in place to build a large scalable analog business. This is a part of its long-term strategic initiative called “Vision 2015.”

The two primary analog platforms are:

  • 0.18um modular platform, with analog, BCD, BCDlite and 700V power
  • 0.13um modular platform with analog, BCD and BCDlite

These platforms are modular in the sense that different capabilities can be added to a base platform depending on what devices are actually required in the final product, and especially how high a voltage is required to be supported. This creates a scalable manufacturing process that has flexibility to mix and match devices while at the same time being able to pass the highest standard qualifications. The modular aspect also enables manufacture at the lowest cost, only using fabrication steps that are actually required for the devices on that wafer batch.


These analog platforms will run in Singapore in 200mm and 300mm fabs, which will also run 55nm and 40nm digital production.

GLOBALFOUNDRIES has already announced plans to strengthen its 300mm manufacturing capability in Singapore by increasing the capacity to be on a trajectory of nearly one million wafers per year. The expansion is planned to be complete by the middle of 2014.

I will be hosting a webinar on the analog and power markets, and the capital plans to support manufacture, on Tuesday April 9th. Join the webinar here. OOPS: forgot to say it is at 10am Pacific

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April 17-19: Overbooked!

April 17-19: Overbooked!
by Paul McLellan on 04-01-2013 at 4:23 pm
Categories: Events, Global Semiconductor Alliance, IP, Semiconductor Services

For three days in a couple of weeks time there is a crash of conferences, spread out all over the extended Bay Area.

Firstly, from 17-19th April at the Santa Clara Hyatt is the Linley Mobile Conference. This covers all things microprocessor in the mobile industry. Details of the conference including the full agenda are here. The conference is free for qualified attendees (which doesn’t include EDA company employees but does include your humble blogger). 9am on 17th Linley gives the keynote, a one hour Mobile Market Overview. Registration is here.

From 18th-19th down in Monterey is the 20th Electronic Design Process Symposium, EDPS. Ivo Bolsens, the CTO of Xilinx, gives the keynote 18th on The All Programmable SoC. Gary Smith gives the after-dinner keynote on Silicon Platforms + Virtual Platforms. On 19th, Dan Nenni (yes, new levels of SemiWiki fame or something) gives the keynote on The FinFET Value Proposition. The rest of the day is all FinFET all the time too. Once Dan’s worked out what he is going to say I’m sure he’ll be blogging about it here.

On the first day there are also sessions on ESL & Platforms, Design Collaboration, and 3D IC (the TSV type not the FinFET type). One the second day the two sessions are on FinFET Design Challanges and FinFET Design Enablement Challenges.

The full program is here. Registration is here.

On Thursday 18th at the Computer History Museum in Mountain View is the GSA Silicon Summit. Registration is free for GSA members, otherwise $50. The day is split into 3 panel sessions:

  • Disruptive Innovation: Enabling Technology for the Connected World of Tomorrow
  • How More Than Moore Impacts the Internet of Things
  • Integration Challenges and Opportunities

The full program is here. Registration is here.

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Clock Gating: Sequential Is Better

Clock Gating: Sequential Is Better
by Paul McLellan on 04-01-2013 at 3:46 pm
Categories: EDA

Sequential clock gating offers more power savings that can be obtained just with combinational clock gating. However, sequential clock gating is very complex as it involves temporal analysis over multiple clock cycles and examination of the stability, propagation, and observability of signal values.

Trying to do sequential clock gating manually is extremely difficult if at all possible, as it requires keeping track of data values over multiple cycles. But it is very attractive, especially in wide datapaths where saving unnecessary clocking can produce power savings as large as 30%. The basic idea is simple. If a register wasn’t clocked on this clock cycle, and it feeds another register on the next clock cycle then that following register does not need to be clocked on the next cycle since it already must contain the correct value. But although the basic idea is simple, getting all the details right in real world designs is not simple at all.

However, in addition to the challenge of correctly inferring which cycles to which registers can be gated, there is an equivalent problem which is how to verify that the inserted sequential clock-gating logic has been inserted correctly. Almost by definition, sequential clock gating changes the behavior of registers and memories and so introduces new verification challenges. Simulation is too time-consuming and is not exhaustive and ordinary formal verification often comes up short either in capability or in ease-of-use. What is required is sequential formal verification.

Next week, Rob Eccles of Calypto will present a webinar Impact of Sequential Clock Gating on Design Flow and Verification. This will cover the latest in sequential clock gating methodologies and its impact on the overall design flow,. He will also describe the latest sequential formal analysis, automated sequential clock gating, ECO and verification. Today, Rob is an AE at Calypto primarily supporting PowerPro. Prior to joining Calypto he was a design engineer and CAD engineer at AMD, Vitesse and Xilinx.

The webinar is April 9th at 10am Pacific. More details, including a link to register, are here.

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Power integrity: ground, and other fairy tales

Power integrity: ground, and other fairy tales
by Don Dingee on 03-31-2013 at 8:30 pm
Categories: EDA, Siemens EDA

Ground. It’s that little downward-pointing triangle that somehow works miracles on every schematic. It looks very simple until one has to tackle modern power distribution network (PDN) design on a board with high speed and high power draw components, and you soon discover ground is a complicated fairy tale with a lot of influences.

No amount of signal integrity analysis will save a design if the power integrity is lacking. We’ve been looking around at various tools for power and signal integrity, and I wanted a closer look at the Mentor Graphics offering. HyperLynx 9.0 is making its debut with new features for DDR memory analysis and more, but the baseline of features for power integrity analysis is intact from the prior version.

I grabbed an oldie-but-goodie Mentor webinar on “Design for Signal & Power Integrity with HyperLynx 8.0”, featuring independent consultant Dr. Eric Bogatin and Chuck Ferry of Mentor talking through the subtleties of PDN analysis. Eric proposed three basic goals for any design: providing stable voltages to the chip pads across the spectrum from DC to more than the bandwidth of signals; providing a low impedance return path (the correct name for “ground”) for signals; and mitigating EMI.

He then injected the first dose of reality: what does 100A look like, anyway? We think of high amperages involved in something like the circuit breaker panel on the side of our building, or in gigantic chunks of copper. On boards with multiple processors, power supply current on primary voltages can add up quickly, including spikes from simultaneous switching of signals. He sets a goal of 1mOhm impedance, from DC to GHz ranges, for a PDN.

In a simple fairy tale, there are 3 “habits” to minimize PDN impedance. The first is to place power and ground planes on adjacent layers separated by a thin dielectric, close to the surface if possible. The second is to use short surface traces for decoupling capacitors. The third is to choose the number and values of decoupling caps to fine-tune the impedance profile where needed.

In the full-length book of short stories, the darker characters in the PDN show up. There are lots of voltage rails on a board, each with characteristics of loading and decoupling. There are not enough planes as a result, and even good planes are non-optimally shaped or look more like Swiss cheese underneath difficult components (often the highest current draws). Space is always at a premium, so locating the decoupling caps may be a struggle.

Coping and hoping used to be the strategy: do what worked on prior designs, go to the “guru” and ask for his layout advice, or dump a lot of margin in with more layers to accommodate planes and more decoupling. In a better strategy, design rules and virtual prototyping enter the story to help create a “correct by design” environment with the minimum margin needed for performance goals, which helps minimize cost.

Chuck then showed some of the capability of HyperLynx in analyzing power integrity. The first is pictured above: being able to look at current density and IR drop across the layout, with the red and yellow areas where things are happen. At a more detailed level, HyperLynx can drill down and look at simulated current at each via, quickly revealing possible problem areas that may need rerouting or additional traces (usually not enough ground vias) to deliver current.

This type of post-layout visualization of power integrity can head off problems before they ruin a design. There is nothing more evil than trying to debug an elusive voltage drop on a critical area of a physical prototype, burning braincells on power instead of signaling performance. Mentor is even offering a cloud-based version of HyperLynx PI for designers to try it out.

In your experience, is the empirical wisdom of the guru still enough to succeed in power distribution on boards, or is something more analytical needed to navigate the fairy tale? Have you tried HyperLynx PI and have some thoughts? Where are you still running into problems where new tools might help? Thoughts welcome.

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Tackling Circuit Level EM Analysis for RF, MMW and High Speed Analog Designs

Tackling Circuit Level EM Analysis for RF, MMW and High Speed Analog Designs
by Daniel Nenni on 03-31-2013 at 8:07 pm
Categories: EDA, General

Accuracy, ease of use and performance have always been paramount for electromagnetic analysis software. Historically, it has been hard to find all three of these qualities in one tool. The result is that many high speed analog and RF designers resort to using multiple, often overlapping, tools to get the job done.

Lorentz Solution set out years ago to solve this problem. Their success to date shows that this is working. ThePeakView electromagnetic design platform is used by the largest FPGA, RF and foundry companies. PeakView has a finely tuned field solver, flexible passive device synthesis and automatically generates physics based RCLK models for time domain analysis.

With higher frequency designs and more advanced process nodes, the challenge has moved on to a new frontier – multiple device electromagnetics. Designers increasingly care about coupling between passive devices or interconnect, and also the effects of shielding and DFM structures like metal fills. The best example of this trend is the elevated need to model critical interconnect for inductance – not just R and C anymore. Circuit designers are learning that extraction tools are not accurate enough for the job.

Lorentz has implemented a set of new technologies that make it easy and efficient to look at coupling among devices and interconnect while considering DFM structures too. The 3.1.1 release of PeakView brings these features together.

Hierarchical EM (HEM) gives designers the flexibility to rapidly model large and complicated EM structures. A powerful direct solver handles each ‘partition’ then the coupling between partitions is factored in, producing a single EM model. Customers are using this to model caps, inductors, transmission lines and interconnect together all in one run. It is ideal for ensuring that mutual inductance is not going to interfere with circuit operation.

Incremental EM adds the ability to change and move devices around for coupling analysis and get fast results. It works by only re-simulating has what changed in the design. After the first run, all changes in subsequent design iterations will run at lightening speed – giving the designer true EM results for all devices and device coupling.

High Frequency Designer takes circuit analysis beyond simple RC extraction and adds true EM field solver capability to the LVS->LPE->Simulation flow. High port count critical interconnect is electromagnetically analyzed and back-annotated into an updated simulation view in the designer’s library.

Physics Based Interconnect Modeling ensures that designers have RLCK subcircuits suitable for SPICE simulators running time domain analysis. The problem with field solvers is that that they only output s-parameters. Lorentz had previously solved this problem for devices, but now boasts the ability to give physics based RLCK models for arbitrary interconnect.

This new suite of capabilities, running in a millimeter-wave silicon tested solver, means that designers can easily and confidently build circuits where verification includes factoring in electromagnetic effects at the circuit level, something that has never been done so easily before. Moving well integrated EM analysis and design to an earlier point in the flow means fewer iterations, more productivity and increased first time silicon success.

By Tom Simon
Director of sales and Business Development
Lorentz Solution, Inc.