Synopsys ♥ FinFETs

Synopsys ♥ FinFETs
by Daniel Nenni on 03-03-2013 at 6:00 pm

FinFETs are fun! They certainly have kept me busy writing over the past year about the possibilities and probabilities of a disruptive technology that will dramatically change the semiconductor ecosystem. Now that 14nm silicon is making the rounds I will be able to start writing about the realities of FinFETs which is very exciting!… Read More


FinFET Design Challenges at 14nm and 10nm

FinFET Design Challenges at 14nm and 10nm
by Daniel Payne on 02-25-2013 at 11:09 am

speaker vassiliosgerousis

At DAC 2012 we were hearing about the 20nm design ecosystem viability, however IC process technology never stands still so we have early process development going on now at the 10nm and 14nm nodes where FinFET technology is being touted. Earlier in February Vassilios Gerousis, a distinguished engineer at Cadence presented a session… Read More


How Can You Work Better with Your Foundry?

How Can You Work Better with Your Foundry?
by glforte on 02-22-2013 at 5:40 pm

The fabless revolution in the digital semiconductor industry is no more, with just a few integrated device manufacturers (IDMs) remaining on the playing field, it is now the normal way to do business. However, the learning curve for each new process node continues as it always has, with a host of new technical challenges for the … Read More


ISSCC 2013: Circuit Design Using FinFETs!

ISSCC 2013: Circuit Design Using FinFETs!
by Daniel Nenni on 02-16-2013 at 8:00 pm


One of the privilages of blogging for SemiWiki is invitations to the top conferences around the world including the International Solid-State Circuits Conference (ISSCC) in San Francisco this week. Amazing, this conference is older than I am:

ISSCC 2013 is the 60th Conference in an incredibly long-lasting series. FollowingRead More


Tubes of the Future

Tubes of the Future
by Paul McLellan on 02-07-2013 at 10:00 pm

So what is a silicon nanowire? It is basically a FET where the active element is a wire 3-20nm in diameter. So where a FinFET has the gate wrapped around 3 sides of the transistor, a nanowire (NW) has it wrapped around all four. In essence, the wire runs through the middle of the gate.

There seem to be three issues about building a silicon… Read More


Common Platform Technology Forum February 5th 2013 Live or Online!

Common Platform Technology Forum February 5th 2013 Live or Online!
by Daniel Nenni on 02-03-2013 at 8:00 am

Can’t make it to Santa Clara? Join us online!

The detailed 2013 CPTF agenda is now up in preparation for the February 5th event at the Santa Clara Convention Center. This is one of the rare times that you can get a free lunch! Watch this quick video to see what is in store for us this year. Dr. Paul McLellan and I will be there so please… Read More


Advanced Technology-Design-Manufacturing Co-optimization

Advanced Technology-Design-Manufacturing Co-optimization
by Daniel Nenni on 01-31-2013 at 7:00 pm

I spent some quality time with Subi Kengeri, Vice President, Technology Architecture, Office of the CTO, GLOBALFOUNDRIES in Las Vegas during CES. Great guy, he worked at Silicon Access, Virage and TSMC before GF. One thing you should know about embedded memory guys, SRAM is the first thing that goes through a new process so they … Read More


FD-SOI is Worth More Than Two Cores

FD-SOI is Worth More Than Two Cores
by Paul McLellan on 01-20-2013 at 10:00 pm

This is the second blog entry about an ST Ericsson white-paper on multiprocessors in mobile. The first part was here.

The first part of the white-paper basically shows that for mobile the optimal number of cores is two. It is much better to use process technology (and good EDA) to run the processor at higher frequency rather than add… Read More


Intel 22nm SoC Process Exposed!

Intel 22nm SoC Process Exposed!
by Daniel Nenni on 12-27-2012 at 9:00 pm

The biggest surprise embedded in the Intel 22nm SoC disclosure is that they still do NOT use Double Patterning which is a big fat hairy deal if you are serious about the SoC foundry business. The other NOT so surprising thing I noticed in reviewing the blogosphere response is that the industry term FinFET was dominant while the Intel… Read More


FinFET Modeling and Extraction at 16-nm

FinFET Modeling and Extraction at 16-nm
by Daniel Payne on 12-18-2012 at 12:05 pm

In 2012 FinFET is one of the most talked about MOS technologies of the year because traditional planar CMOS has slowed down on scaling below the 28nm node. To learn more about FinFET process modeling I attended a Synopsys webinar where Bari Biswas presented for about 42 minutes include a Q&A portion at the end.


Bari Biswas, SynopsysRead More