My Top Three Reasons to Attend IEDM 2019

My Top Three Reasons to Attend IEDM 2019
by Scotten Jones on 10-11-2019 at 6:10 am

Image RemovedThe International Electron Devices Meeting is a premier event to learn about the latest in semiconductor process technology. Held every year in early December is San Francisco this years conference will be held  from Decembers 7th through December 11th. You can learn more about the conference at their web site hereRead More


TSMC OIP Overview and Agenda!

TSMC OIP Overview and Agenda!
by Daniel Nenni on 09-05-2019 at 6:00 am

The TSMC Symposium and OIP Ecosystem Fourm are the most coveted events of the year for the fabless semiconductor ecosystem, absolutely. In my 35 years of semiconductor experience never has there been a more exciting time in the ecosystem and that is clear by the overview and agenda for this year’s event. I hope to see you there:… Read More


WEBINAR: VLSI Design Methodology Development

WEBINAR: VLSI Design Methodology Development
by Daniel Nenni on 09-04-2019 at 10:00 am

This webinar provides a brief overview of a new text, VLSI Design Methodology Development. The content of the book will be reviewed, highlighting topics that have recently influenced SoC design methodology features – e.g., FinFET circuit libraries, multipatterning lithography, layout-dependent effects, electromigration… Read More


Webinar: VLSI Design Methodology Development (new text)

Webinar: VLSI Design Methodology Development (new text)
by Tom Dillinger on 08-28-2019 at 10:00 am

Daniel Nenni was gracious enough to encourage me to conduct a brief webinar describing a new reference text, recently published by Prentice-Hall, part of the Semiwiki Webinar Series.

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VLSI DESIGN Methodology Development Webiner Replay

Background

I was motivated to write the text to provide college students with… Read More


IEDM 2019 to Highlight Innovative Devices for an Era of Connected Intelligence

IEDM 2019 to Highlight Innovative Devices for an Era of Connected Intelligence
by Scotten Jones on 08-28-2019 at 6:00 am

Image RemovedThe IEEE International Electron Devices Meeting is in my opinion the leading technology conference to understand the current state-of-the-art in semiconductor process technology. Held each year in early December in San Francisco it is a must attend conference for anyone following technology development. The… Read More


IC to Systems Era

IC to Systems Era
by Daniel Nenni on 05-16-2019 at 12:00 pm

One of my favorite EDA disruptions is the Siemens acquisition of Mentor, pure genius. Joe Sawicki now runs the Mentor IC EDA business for Siemens so we will be seeing him at more conferences and events than ever before. Joe did a very nice keynote at the recent U2U conference that I would like to talk about before we head to the 56thDAC… Read More


The Evolution of the Extension Implant Part V

The Evolution of the Extension Implant Part V
by Daniel Nenni on 05-13-2019 at 7:00 am

Part 4 of this series discussed how a transistor Extension could be fabricated in a planar device without using an implant operation, and is instead formed using a preferential etch followed by a selective epitaxial deposition. This final installment of the series will present the formation of an Extension in a FinFET transistor… Read More


The Evolution of the Extension Implant Part III

The Evolution of the Extension Implant Part III
by Daniel Nenni on 05-06-2019 at 7:00 am

The problem of traditional FinFET Extension Implant doping concerns the awkward 3-dimensional structure of the fin. Because the Extension Implant defines the conductive electrical pathway between the Source/Drains and the undoped channel portion of the fin, it is essential that the fin be uniformly doped all three of its surfaces… Read More


The Evolution of the Extension Implant Part II

The Evolution of the Extension Implant Part II
by Daniel Nenni on 05-02-2019 at 7:00 am

The use of hard masks instead of photoresist for the Extension implant is an effective way to optimize the amount of dopant that is retained along the fin sidewalls for those fins that border along photoresist edges (as discussed in Part 1 of this series).

However, hard masks do nothing to address the dominant problem driving steeper… Read More


The Evolution of the Extension Implant Part I

The Evolution of the Extension Implant Part I
by Daniel Nenni on 04-29-2019 at 7:00 am

The 3D character of FinFET transistor structures pose a range of unique fabrication problems that can make it challenging to get these devices to yield. This is especially true for the all-important Extension implant that is put in place just prior to the nitride spacer formation.

The Extension implant is a central component of… Read More