Mahesh Tirupattur, EVP at low-power SERDES pioneer Analog Bits lead off the panel discussion at the recent FD-SOI Forum in Shanghai with the assertion that for anything “always on” in IoT, FD-SOI’s always better. They had a great experience porting their SERDES IP to 28nm FD-SOI (which they detailed last spring – see the ppt here… Read More
Tag: fdsoi
Soitec – Enabling the FDSOI Revolution
Recently I published two blogs on Fully Depleted Silicon On Insulator (FDSOI) and the potential the technology shows for a variety of low power and wireless applications. In order to produce FDSOI devices, the device layer has to be thin enough to ensure the device is fully depleted and ideally the buried oxide has to be thin enough… Read More
CEO Interview: Marie Semeria of LETI
Laboratoire d’électronique des technologies de l’information (LETI) is a French research center, affiliate to the CEA (Commisariat a l’Energie Atomique). Since LETI creation in 1967, this affiliation has two consequences, the money was flowing from the deep pocket of the atomic industry to sustain advanced … Read More
GloFo’s 12nm FD-SOI: why it makes headlines in China
As you’ve probably seen in (excellent!) recent semiwiki postings by Eric Esteve and Scotten Jones, 12nm FD-SOI has now officially joined the GlobalFoundries’ roadmap. Eric and Scotten did a great job of putting many things in perspective. But this is a big piece of news, so here I propose looking at it from yet another perspective,… Read More
The Status and Future of FDSOI
I recently took a look at the current status and future direction of FinFET based logic processes in my Leading Edge Logic Landscape blog. I thought it would be interesting to take a similar look at FDSOI and to compare and contrast the two processes. My Leading Edge Logic Landscape blog is available here.… Read More
GLOBALFOUNDRIES Extends the FDSOI Roadmap
On September 8, 2016 GLOBALFOUNDRIES (GF) announced their 12nm FDSOI technology node. On September 12th I had a chance to interview Greg Bartlett, GF Senior Vice President for the CMOS Business Unit (as a side note, GF has: RF SOI, ASIC and CMOS business units).… Read More
GlobalFoundries Enhances FDSOI Roadmap with 12FDX
Last year, GlobalFoundries filled the competitive gap by offering FD-SOI technology on 22nm, offering better performance than 28nm, you may have read about the news in Semiwiki. Timing is important, as Samsung has announced FD-SOI support one year before (2014) GlobalFoundries, but for 28nm. The announcement made by GlobalFoundries… Read More
Why are Top Brass from NXP, Qualcomm, Skyworks Keynoting Upcoming IEEE SOI-3D-SubVt (S3S) Conference? (San Francisco, Oct.’16)
By Fred Allibert
The IEEE S3S Conference (10-13 October 2016 at the San Francisco Airport Hyatt Regency) brings together 3 key technologies that will play a major role in tomorrow’s industry: SOI, 3D integration, and Subthreshold Microelectronics. The numerous degrees of freedom they allow enable the ultra-low power operation… Read More
The Perfect Wearable SoC…?
Power is Everything
During Apollo 13 after the oxygen tank in the service module exploded forcing the crew to use the lunar module as a life boat to get back home, John Aaron – an incredibly gifted NASA engineer who was tasked with getting the Apollo 13 crew back home safely – flatly stated “Power is everything…we’ve… Read More
SEMICON West – Leti FDSOI and IOT, status and roadmap
On Tuesday, July 12th at SEMICON West I had an opportunity to sit down with Marie Semeria, the CEO of Leti and discuss the status and future of FDSOI. Leti pioneered FDSOI 15 years ago and has been the leading FDSOI research ever since.
Two years ago Leti and ST Micro demonstrated products on 28nm that are cost competitive with bulk technology.… Read More