At the 2022 SPIE Advanced Lithography Conference, ASML presented an update on EUV. I recently had a chance to go over the presentations with Mike Lercel of ASML. The following is a summary of our discussions.
The 0.33 NA EUV systems are the production workhorse systems for leading edge lithography today. 0.33 NA systems are… Read More
The next generation of EUV lithography systems are based on a numerical aperture (NA) of 0.55, a 67% increase from the current value of 0.33. It targets being able to print 16 nm pitch [1]. The High-NA systems are already expected to face complications from four issues: (1) reduced depth-of-focus requires thinner resists, which… Read More
To the general public, EUV lithography’s resolution can be traced back to its short wavelengths (13.2-13.8 nm), but the true printed resolution has always been affected by the stochastic behavior of the electrons released by EUV absorption [1-5].
A 0.33 NA EUV system is expected to have a diffraction-limited point spread… Read More
At the recent SPIE Advanced Lithography + Patterning Conference, Mark Phillips from Intel gave an insightful update on the status of the introduction of the 0.55 high numerical aperture extreme ultraviolet lithography technology. Mark went so far as to assert that the development progress toward high-NA EUV would support … Read More
As a consequence of having a ~13.5 nm wavelength, EUV photons transfer ~90% of their energy to ionized photoelectrons. Thus, EUV lithography is fundamentally mostly EUV photoelectron lithography. The actual resolution becomes dependent on photoelectron trajectories.
Photoelectron trajectories in EUV lithography were… Read More
-KLA has another great QTR in face of overwhelming demand
-Supply chain issues obliterated by backlog
-Longer term technology leadership concerns are increasing
-We see limited upside near term & remain cyclically cautious
KLA’s performance remains great as does… Read More
The list of possible stochastic patterning issues for EUV lithography keeps growing longer: CD variation, edge roughness, placement error, defects [1]. The origins of stochastic behavior are now well-known. For a given EUV photon flux into the resist, a limited fraction are absorbed. Since the absorption is less than 5% affected… Read More
-ASML reported an “in line” Q1- Orders remain super strong
-Ongoing supply chain issues will limit growth and upside
-ASML targets 2025 for supply fixes- We are not so sure
-Intel, TSMC, Samsung won’t be able to build all fabs they plan
ASML reported… Read More
In my “The EUV Divide and Intel Foundry Services” article available here, I discussed the looming EUV shortage. Two days ago, Intel announced their first EUV tool installed at their new Fab 34 in Ireland is a tool they moved from Oregon. This is another indication of the scarcity of EUV tools.
I have been tracking EUV system production… Read More
Stochastic defects continue to draw attention in the area of EUV lithography. It is now widely recognized that stochastic issues not only come from photon shot noise due to low (absorbed) EUV photon density, but also the resist material and process factors [1-4].
It stands to reason that resist absorption of EUV light, which is … Read More
