FinFET Custom Design

FinFET Custom Design
by Paul McLellan on 04-02-2014 at 8:30 pm

At CDNLive, Bob Mullen of TSMC gave a presentation on their new custom FinFET flow, doing design, and verifying designs. At 16nm there are all sorts of relatively new verification problems such as layout dependent effects (LDE) and voltage dependent design rules. We had some of this at 20nm but like most things in semiconductor,… Read More


Full Chip ESD Sign-off – Necessary

Full Chip ESD Sign-off – Necessary
by Pawan Fangaria on 11-13-2013 at 7:00 pm

As Moore’s law keeps going, semiconductor design density on a chip keeps increasing. The real concern today is that the shrinkage in technology node has rendered the small wire geometry and gate oxide thickness (although fine in all other perspectives) extremely vulnerable to ESD (Electrostatic Discharge) effects. More than… Read More


TSMC’s 16FinFET and 3D IC Reference Flows

TSMC’s 16FinFET and 3D IC Reference Flows
by Paul McLellan on 09-17-2013 at 2:01 am

Today TSMC announced three reference flows that they have been working on along with various EDA vendors (and ARM and perhaps other IP suppliers). The three new flows are:

  • 16FinFET Digital Reference Flow. Obviously this has full support for non-planar FinFET transistors including extraction, quantized pitch placement, low-vdd
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