3DIC, the World Goes to…Burlingame

3DIC, the World Goes to…Burlingame
by Paul McLellan on 10-23-2013 at 2:09 pm

For the tenth year, the big 3DIC conference takes place in the Hyatt Regency at Burlingame (just south of San Francisco Airport). Officially it is 3D Architectures for Semiconductor Integration and Packaging or ASIP. This year there have already been some significant 3D announcements: TSMC’s 3D program, and Micron’s… Read More


3D: the Backup Plan

3D: the Backup Plan
by Paul McLellan on 09-05-2013 at 1:20 pm

With the uncertainties around timing of 450mm wafers, EUV (whether it works at all and when) and new transistor architectures it is unclear whether Moore’s law as we know it is going to continue, and in particular whether the cost per transistor is going to remain economically attractive especially for consumer markets … Read More


Cadence 3D Methodology

Cadence 3D Methodology
by Paul McLellan on 12-28-2012 at 8:20 pm

A couple of weeks ago was the 3D Architectures for Semiconductor Integration and Packagingconference in Redwood City. Cadence presented the changes that they have been making to their tool flow to enabled 2.5D (interposer-based) and true 3D TSV-based designs. You know what TSV stands for by now right? Through-silicon-via, … Read More


3D Architectures for Semiconductor Integration and Packaging

3D Architectures for Semiconductor Integration and Packaging
by Paul McLellan on 12-10-2012 at 4:00 am

There is obviously a lot going on in 3D IC these days. And I don’t mean at the micro level of FinFETs which is also a way of going vertical. I mean through-silicon-via (TSV) based approaches for either stacking die or putting them on an interposer. Increasingly the question is no longer if this technology will be viable (there… Read More


RedHawk: On to the Future

RedHawk: On to the Future
by Paul McLellan on 05-01-2012 at 6:00 am

For many, maybe most, big designs, Apache’s RedHawk is the signoff tool for analyzing issues around power: electromigration, power supply droop, noise, transients and so on. But the latest designs have some issues: they are enormous (so you can’t just analyze them naively any more than you can run a Spice simulation… Read More


EDPS: 3D ICs, part II

EDPS: 3D ICs, part II
by Paul McLellan on 04-12-2012 at 10:00 pm

Part I is here.

In the panel session at EDPS on 3D IC a number of major issues got highlighted (highlit?).

The first is the problem of known-good-die (KDG) which is what killed off the promising multi-chip-module approach, perhaps the earliest type of interposer. The KDG problem is that with a single die in a package it doesn’t… Read More


EDPS: 3D ICs, part I

EDPS: 3D ICs, part I
by Paul McLellan on 04-10-2012 at 10:00 pm

The second day (more like a half-day) of EDPS was devoted to 3D ICs. There was a lot of information, too much to summarize in a few hundred words. The keynote was by Riko Radojcic of Qualcomm, who has been a sort of one-man-band attempting to drive the EDA and manufacturing industries towards 3D. Of course it helps if you don’t … Read More


Synopsys: now in 3D

Synopsys: now in 3D
by Paul McLellan on 03-26-2012 at 8:00 am

And no red and green glasses required.

I remember the first time I heard about a Through Silicon Via (TSV), punching a hole through the entire wafer to make an electrical connection at the back, like we do all the time in printed circuit boards with through plated holes. I thought someone was trying one on and trying to make me look a fool.… Read More


EDPS Monterey

EDPS Monterey
by Paul McLellan on 03-17-2012 at 8:00 am

Every year in Monterey is a relatively small conference that looks at the design process, EDPS, the electronic design process symposium. I gave a keynote there a couple of years ago, but you don’t have to listen to me this time. The keynotes are from:

  • 1st day: Misha Buric, CTO of Altera, talking about SoC FPGAs and other things
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3D-IC Physical Design

3D-IC Physical Design
by Pawan Fangaria on 02-22-2012 at 10:00 am

When process nodes reached 28 nm and below, it appeared that design density is reaching a saturation point, hitting the limits of Moore’s law. I was of the opinion that the future of microelectronic physical design was limited to 20 and 14 nm being addressed by technological advances such as FinFETs, double patterning, HKMG (High-k… Read More