I have written multiple articles about this year’s SPIE Advanced Lithography Conference describing all of the progress EUV has made in the last year. Source power is improving, photoresists are getting faster, prototype pellicles are in testing, multiple sites around the world are exposing wafers by the thousands and more. … Read More
At ISSCC this year Samsung published a paper entitled “A 10nm FinFET 128Mb SRAM with Assist Adjustment System for Power, Performance, and Area Optimization. In the paper Samsung disclosed a high density 6T SRAM cell size of 0.040µm[SUP]2[/SUP]. I thought it would be interesting to take a look at how this cell size stacks … Read More
SPIE Days 3 and 4:
Anna Lio of Intel presented EUV resists: What’s next?
Intel wants to insert EUV at 7nm but it has to be ready and economical. Critical Dimension Uniformity (CDU), Line Width Roughness (LWR) and edge placement/stochastics are all stable on 22nm, 14nm and 10nm pilot lines.… Read More
About 35 years ago the first commercial SPICE circuit simulators emerged and they were quickly put to work helping circuit designers predict the timing and power of 6um NMOS designs. Then we had to limit our circuit simulations to just hundreds of transistors and interconnect elements to fit into the RAM and complete simulation… Read More
It used to be that GPU chips moved to new process nodes pretty frequently, previously as often as annually. That is up until 2011. That was the year that 28nm GPU’s were unveiled. Since then there has been a long pause. Now in the wake of the 2016 CES both Nvidia, with its previously announced Pascal, and AMD, with the just announced Polaris,… Read More
With every new technology node, there are newer physical effects that need to be taken into account. And every new physical effect brings with itself several new formats to model them. Often a format is also associated with several of its derivatives, sometimes an standard reincarnation of a proprietary format further evolved… Read More
Daniel Nenni recently blogged about Intel’s claims of industry leading process density that were made at their analysts meeting. It isn’t clear to me why Intel makes this such a big focus at the analysts meetings, they really don’t compete with the foundries much but this seems to be a big deal to them. I thought it would be interesting… Read More
Fabless companies and the need for foundries
The success of fabless semiconductor companies is well documented with companies such as Qualcomm, Broadcom, MediaTek, AMD, Avago and others selling semiconductors made using the fabless model (see Fabless: The Transformation of the Semiconductor Industry by Daniel Nenni and … Read More
Last Monday Daniel Nenni and I had a conference call with Jason Gorss and Shubhankar Basu of Global Foundries to get an update on their 14nm process. Shubhankar is the product line manager for 14nm.
Global Foundries 14nm process is a FinFET on bulk process they licensed from Samsung and both companies supply the same process although… Read More
Last Tuesday was the SEMI’s annual Strategic Materials Conference (SMC). The opening keynotes were given by Gary Patton, the CTO of GlobalFoundries, and Mark Thirsk, Managing Partner of Linx Consulting. This year it was held in the Computer History Museum (which always makes the commute interesting since you have to fight… Read More