Dan is joined by Srabanti Chowdhury, the publicity co-chair for IEDM, which will be an in-person conference December 11-15 at the Hilton San Francisco Union Square. Dan explores the topics to be discussed at the upcoming meeting and what they suggest about the future of semiconductors.
Srabanti Chowdhury is an associate professor of Electrical Engineering (EE) and a Senior Fellow of Precourt Institute at Stanford. She leads the Wide bandgap (WBG) Lab at Stanford, where her research focuses on the wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy-efficient and compact system architecture for various applications, including power, RF, computation, and emerging ones. Besides Gallium Nitride, her group is exploring Diamond for various active and passive electronic applications, particularly thermal management.
Srabanti received her M.S and Ph.D. in Electrical Engineering from the University of California, Santa Barbara working on Vertical GaN Switches.
She received the DARPA Young Faculty Award, NSF CAREER, and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She is a senior member of IEEE and an alumni of NAE Frontiers of Engineering. She received the Alfred P. Sloan fellowship in Physics in 2020. To date, her work has produced over 6 book chapters, 90 journal papers, 110 conference presentations, and 26 issued patents. She serves the program committee of several IEEE conferences including IRPS and VLSI Symposium, and the executive committee of IEDM. She serves as the Associate Editor of Transaction Electron Devices as well as two committees under IEEE Electron Device Society (Compound Semiconductor Devices & Circuits Committee Members and Power Devices and ICs Committee).
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