TSMC (N7+): https://www.eetimes.com/document.asp?doc_id=1333827
- 1.2X density compared to N7
- up to 12% power reduction compared to N7
- up to 4 EUV layers
- tracks assumed the same
=> N7 MMP=40 nm, assuming 10% reduction each direction gives 36 nm for N7+.
Samsung (7LPP): Samsung Electronics Starts Production of EUV-based 7nm LPP Process – Samsung Global Newsroom
- 1.4x density ("area efficiency") compared to 10nm
- up to 50% power reduction compared to 10nm
- 20% fewer masks compared to non-EUV
- 6.75 tracks compared to 8.75 tracks 10nm (https://www.semiwiki.com/forum/content/7442-samsung-10nm-8nm-7nm-vlsit.html)
=> With 10nm MMP=48 nm, 1.4/(8.75/6.75) ~1.08x increase in pitch density means MMP for 7LPP is hardly changed (46 nm).
- 1.2X density compared to N7
- up to 12% power reduction compared to N7
- up to 4 EUV layers
- tracks assumed the same
=> N7 MMP=40 nm, assuming 10% reduction each direction gives 36 nm for N7+.
Samsung (7LPP): Samsung Electronics Starts Production of EUV-based 7nm LPP Process – Samsung Global Newsroom
- 1.4x density ("area efficiency") compared to 10nm
- up to 50% power reduction compared to 10nm
- 20% fewer masks compared to non-EUV
- 6.75 tracks compared to 8.75 tracks 10nm (https://www.semiwiki.com/forum/content/7442-samsung-10nm-8nm-7nm-vlsit.html)
=> With 10nm MMP=48 nm, 1.4/(8.75/6.75) ~1.08x increase in pitch density means MMP for 7LPP is hardly changed (46 nm).
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