This comparison of smartphone processors from different companies and fab processes was originally going to be a post, but with the growing information content, I had to put it into an article. Here, due to information availability, Apple, Huawei, and Samsung Exynos processors will get the most coverage, but a few Qualcomm Snapdragon
Thermo-compression bonding for Large Stacked HBM Die
Summary
Thermo-compression bonding is used in heterogeneous 3D packaging technology – this attach method was applied to the assembly of large (12-stack and 16-stack) high bandwidth memory (HBM) die, with significant bandwidth and power improvements over traditional microbump attach.
Introduction
The rapid growth of heterogeneous… Read More
Intel 7NM Slip Causes Reassessment of Fab Model
Waving white surrender flag as TSMC dominates-
The quarter was a success but the patient is dying-
Packaging now critical as Moore progress stumbles-
Intel reported a great quarter but weak H2 guidance-
But 7NM slip and “fab lite” talk sends shockwaves-
Intel reported a great quarter beating numbers all around with… Read More
In-Memory Computing for Low-Power Neural Network Inference
“AI is the new electricity.”, according to Andrew Ng, Professor at Stanford University. The potential applications for machine learning classification are vast. Yet, current ML inference techniques are limited by the high power dissipation associated with traditional architectures. The figure below highlights the … Read More
A Compelling Application for AI in Semiconductor Manufacturing
There have been a multitude of announcements recently relative to the incorporation of machine learning (ML) methods into EDA tool algorithms, mostly in the physical implementation flows. For example, deterministic ML-based decision algorithms applied to cell placement and signal interconnect routing promise to expedite… Read More
Optimizing Chiplet-to-Chiplet Communications
Summary
The growing significance of ultra-short reach (USR) interfaces on 2.5D packaging technology has led to a variety of electrical definitions and circuit implementations. TSMC recently presented the approach adopted by their IP development team, for a parallel-bus, clock-forwarded USR interface to optimize power/performance/area… Read More
Multi-Vt Device Offerings for Advanced Process Nodes
Summary
As a result of extensive focus on the development of workfunction metal (WFM) deposition, lithography, and removal, both FinFET and gate-all-around (GAA) devices will offer a wide range of Vt levels for advanced process nodes below 7nm.
Introduction
Cell library and IP designers rely on the availability of nFET and pFET… Read More
Effect of Design on Transistor Density
I have written a lot of articles looking at leading edge processes and comparing the process density. One comment I often get are that the process density numbers I present do not correlate with the actual transistor density on released products. A lot of people want to draw conclusions an Intel’s processes versus TSMC’s processes… Read More
Cost Analysis of the Proposed TSMC US Fab
On May 15th TSMC “announced its intention to build and operate an advanced semiconductor fab in the United States with the mutual understanding and commitment to support from the U.S. federal government and the State of Arizona.”
The fab will run TSMC’s 5nm technology and have a capacity of 20,000 wafers per month (wpm). Construction… Read More
TSMC’s Advanced IC Packaging Solutions
TSMC as Pure Play Wafer Foundry
TSMC started its wafer foundry business more than 30 years ago. Visionary management and creative engineering teams developed leading-edge process technologies and their reputation as trusted source for high-volume production. TSMC also recognized very early the importance of building an … Read More