The main threat for the wide adoption of MRAM memories continues to be their lack of immunity to magnetic fields. MRAM magnetic immunity (MI) levels has seen significant research over the years and new data is continuously published from the main MRAM vendors.
This data, however, is rarely compared to magnetic field exposure scenarios… Read More
Summary
A novel spin-transfer torque magnetoresistive memory (STT-MRAM) IP offering provides an attractive alternative for demanding high-performance embedded applications.
Introduction
There is a strong need for embedded non-volatile memory IP across a wide range of applications, as depicted in the figure below.
The… Read More
32Mb Embedded STT-MRAM in ULL 22nm CMOS Achieves 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150C and High Immunity to Magnetic Field Interference presented at ISSCC2020
1. Motivation for STT-MRAM in Ultra-Low-Leakage 22nm Process
TSMC’s embedded Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)… Read More
The International Electron Devices Meeting is a premier event to learn about the latest in semiconductor process technology. Held every year in early December is San Francisco this years conference will be held from Decembers 7th through December 11th. You can learn more about the conference at their web site here.
This is a must… Read More
On the Sunday evening at IEDM last year, TechInsights held a reception in which Arabinda Das and Jeongdong Choe gave presentations that attracted a roomful of conference attendees.
This is the second part of the review of Jeongdong’s talk, we covered NAND flash technology in the last post. Jeongdong is a Senior Technical… Read More
An increasing percentage of SoC die area is being allocated to memory arrays, as applications require more data/instruction storage and boot firmware. Indeed, foundries invest considerable R&D resources into optimizing their array technology IP offerings, often with more aggressive device features than used for other… Read More
