IEDM 2017 – Leti Gate-All-Around Stacked-Nanowires

IEDM 2017 – Leti Gate-All-Around Stacked-Nanowires
by Scotten Jones on 02-12-2018 at 12:00 pm

At IEDM in December I had a chance to interview Thomas Ernst about the paper “Performance and Design Considerations for Gate-All-around Stacked-NanoWires FETs” by Leti and STMicroelectonics.

Leti published the first stacked nanowire in 2006, it was very new then, now stacked nanowire/nanosheets are starting… Read More


7nm node is arriving, which ones will continue past 2020?

7nm node is arriving, which ones will continue past 2020?
by Pawan Fangaria on 02-17-2015 at 6:30 pm

‘Laughing Buddha’ is eternal, but for semiconductor industry, I must say it’s ‘laughing Moore’. Moore made a predictive hypothesis and the whole world is inclined to let that continue, eternally? When we were at 28nm, we weren’t hoping to go beyond 20/22nm; voices like ‘Moore’s law is dead’ started emerging. Today, we are already… Read More