With the announcement of early PDK availability for the 3nm GAA process node, designers are extremely interested in the characteristics of the new “gate-all-around” transistor structure and how it compares to the existing FinFET device. The GAA transistor has been denoted as a (horizontal) nanowire or nanosheet.
I will talk… Read More
We live in an age of abundant information. There is a tremendous exchange of ideas crisscrossing the world enabling new innovative type of products to pop up daily. Therefore, in this era there is a greater need to understand competitive intelligence. Corporate companies today are interested in what other competitors are brewing… Read More
At IEDM in December I had a chance to interview Thomas Ernst about the paper “Performance and Design Considerations for Gate-All-around Stacked-NanoWires FETs” by Leti and STMicroelectonics.
Leti published the first stacked nanowire in 2006, it was very new then, now stacked nanowire/nanosheets are starting… Read More
‘Laughing Buddha’ is eternal, but for semiconductor industry, I must say it’s ‘laughing Moore’. Moore made a predictive hypothesis and the whole world is inclined to let that continue, eternally? When we were at 28nm, we weren’t hoping to go beyond 20/22nm; voices like ‘Moore’s law is dead’ started emerging. Today, we are already… Read More
