Although semiconductor manufacturing has taken off with FinFET based process technology which provides lucrative payoffs on performance improvement, power reduction and area saving in devices for high density and high performance SoC demand of modern era, apprehensions remain about its reliability due to reduced noise … Read More
Tag: finfet
TSMC vs Intel vs Samsung FinFETs
By definition the pure-play foundry business model separates the design and manufacturing of a semiconductor device. TSMC was the first dedicated (pure-play) foundry which enabled the incredible fabless semiconductor ecosystem we have today. If not for the fabless business model we would not have the supercomputer class … Read More
RedHawk Excels – Customers Endorse
Since a few years, I have been following up Ansys Apachetools for semiconductor design, verification and sign-off. RedHawk is the most prominent platform of tools from Ansys, specifically for Power, Noise and Reliability Sign-off. It has witnessed many open endorsements from several of Ansyscustomers through open presentations,… Read More
Virtual Fabrication: Not just for fabs. Fabless companies can benefit from more visibility into process technology
Ever since I started talking about Virtual Fabrication I have mostly looked at it from the manufacturers’ perspective, where it has obvious benefits to develop and model new process technology. But what about the fabless design concept and indeed even the semiconductor IP world that has spawned from it as well? It seems that Virtual… Read More
FD-SOI Not Just For France Any More, China Signs On?
The COO of ST Microelectronics, Jean-Marc Chery announced that they have signed a new foundry agreement for FD-SOI. What he actually said doesn’t reveal who the foundry in question is:“We have just signed a strategic agreement with a top-tier foundry for 28nm FD-SOI technology. This agreement expands the ecosystem, assures… Read More
FinFET & Multi-patterning Need Special P&R Handling
I think by now a lot has been said about the necessity of multi-patterning at advanced technology nodes with extremely low feature size such as 20nm, because lithography using 193nm wavelength of light makes printing and manufacturing of semiconductor design very difficult. The multi-patterning is a novel semiconductor manufacturing… Read More
FD-SOI Better Than FinFET?
As I said earlier in the month, I was going to be talking about FD-SOI at the Electronic Design Process Symposium (EDPS) in Monterey. I am not especially an expert on FD-SOI but I know enough to be dangerous and given that we were already talking about FinFET and 3D/2.5D chips, it fitted in nicely.
The 10,000 foot view is that FD-SOI has… Read More
Samsung ♥ GLOBALFOUNDRIES
Had I not been briefed personally I may not have believed it. Samsung and GLOBALFOUNDRIES will work closely together on satisfying 14nm wafer demand while sharing Samsung’s FinFET secret sauce. This tells me two things: Samsung has more 14nm design wins than I had originally reported and the new GF CEO is serious about the… Read More
U2U: Things You Might Not Know About TSMC
At Mentor’s U2U this afternoon I attended a presentation on TSMC’s use of Calibre PERC (it is a programmable electrical rule checker) for qualification of IP in TSMC’s IP9000 program. I’ve written about this before here. Basically IP providers at N20SOC, N16FF, and below are required to use PERC to guarantee… Read More
FD-SOI, FinFET, 3D in Monterey
Last night the IEEE Silicon Valley Chapter had a panel session that was in some ways a preview of some of what will be discussed at the Electronic Design Process Symposium in Monterey next Thursday and Friday. At EDPS Herb Reiter organized a session on FinFET, 3DIC and FD-SOI (sort of how many buzzwords can you get into one set of titles).… Read More