In-Design DFM Signoff for 14nm FinFET Designs

In-Design DFM Signoff for 14nm FinFET Designs
by Pawan Fangaria on 11-04-2014 at 4:00 pm

While FinFET yield controversy is going on, I see a lot being done to improve that yield by various means. One prime trend today, it must be, it’s worthwhile, is to pull up various signoffs as early as possible during the design cycle. And DFM signoff is a must with respect to yield of fabrication. This reminds me about my patents filed… Read More


TSMC Breaks More Records in Q3 2014!

TSMC Breaks More Records in Q3 2014!
by Daniel Nenni on 10-16-2014 at 4:00 pm

As previously predicted TSMC is having another record breaking SoC quarter. TSMC is my favorite economic bellwether and from what I can see the semiconductor industry will continue to grow this year and next at a rapid rate thanks to TSMC and the fabless semiconductor ecosystem:

We have set a new record of revenue and profitabilityRead More


The Apple Samsung TSMC Intel 14nm Mashup!

The Apple Samsung TSMC Intel 14nm Mashup!
by Daniel Nenni on 10-04-2014 at 1:00 pm

One of the strengths of the fabless semiconductor ecosystem is competition since it keeps innovation high and prices low. One of the challenges of fostering competition is that you have to make good on a threat of using a competing product during a pricing negotiation. Well, in my opinion, for the next version of the iPhone, Apple… Read More


GlobalFoundries and Samsung at ARM

GlobalFoundries and Samsung at ARM
by Paul McLellan on 10-03-2014 at 3:01 pm

It was back in April that GlobalFoundries and Samsung announced that GF would license Samsung’s 14nm process to run in their Fab8 in upstate New York. Since then there has not really been any news and of course those of us that follow the foundry industry wondered to what extent there was real substance to the agreement or if … Read More


ANSYS Tools Shine at FinFET Nodes!

ANSYS Tools Shine at FinFET Nodes!
by Pawan Fangaria on 09-30-2014 at 4:00 pm

In the modern semiconductor ecosystem we are seeing rapid advancement in technology breaking past once perceived limits; 28nm, 20nm, 16-14nm, 10nm and we are foreseeing 7nm now. Double and multi-patterning are already being seen along with complex FinFET structures in transistors to gain the ultimate advantages in PPA from… Read More


Who Will Lead at 10nm?

Who Will Lead at 10nm?
by Scotten Jones on 09-29-2014 at 4:00 pm

There has been a lot of discussion on SemiWiki lately around 14nm FinFET technology and who really leads and by how much. I thought it would be interesting to review some process metrics for previous technology generation and then make some forecasts around 10nm.

The focus of this article will be Intel, TSMC and Global Foundries/Samsung… Read More


Place & Route with FinFETs and Double Patterning

Place & Route with FinFETs and Double Patterning
by Paul McLellan on 09-29-2014 at 8:00 am

Place & route in the 16/14nm era requires a new approach since it is significantly more complex. Of course, every process generation is more complex than the one before and the designs are bigger. But modern processes have new problems. The two biggest changes are FinFETs and double patterning.

FinFETs, as I assume you know,… Read More


Samsung 14nm FinFET Design with Cadence Tools

Samsung 14nm FinFET Design with Cadence Tools
by Daniel Payne on 09-22-2014 at 5:30 pm

The first consumer products with 20nm processing are arriving in 2014 like the 2 billion transistor A8 chip in the iPhone 6, however at the 14nm node there are new designs underway to continue the trend of Moore’s Law. To get a better feel for the challenges of designing with 14nm FinFET technology I watched a 23 minute video … Read More


USB 3.0 IP on FinFET may stop port pinching

USB 3.0 IP on FinFET may stop port pinching
by Don Dingee on 08-19-2014 at 5:00 pm

Sometimes a standard is a victim of its own success, at least for a while as the economics catch up to the technology. When a standard like USB 3.0 is announced, with a substantial performance increase over USB 2.0, some of the use cases come on board right away. Others, where vendors enjoy a decent ROI with good-enough performance,… Read More


SEMulator3D: GlobalFoundries Process Variation Reduction

SEMulator3D: GlobalFoundries Process Variation Reduction
by Paul McLellan on 08-19-2014 at 7:01 am

At SEMICON last month, Rohit Pal of GlobalFoundries gave a presentation on their methodology for reducing process variation. It was titled Cpk Based Variation Reduction: 14nm FinFET Technology.

Capability indices such as Cpk is a commonly used technique to assess the variation maturity of a technology. It looks at a given parameter’s… Read More