– SPIE EUV & Photomask conference well attended with great talks
– Chip industry focused on next gen High NA EUV & what it impacts
– Do big chips=big masks? Another Actinic tool?
– AI & chip tools, a game changer- China pre-empting more sanctions
Extension of DUV Multipatterning Toward 3nm
China’s recent achievement of a 7nm-class foundry node using only DUV lithography [1] raises the question of how far DUV lithography can be extended by multipatterning. A recent publication at CSTIC 2023 indicates that Chinese groups are currently looking at extension of DUV-based multipatterning to 5nm, going so far… Read More
Stochastic Model for Acid Diffusion in DUV Chemically Amplified Resists
Recent articles have focused much effort on studying the stochastic behavior of secondary electron exposure of EUV resists [1-4]. Here, we consider the implications of extending similar treatments to DUV lithography.
Basic Model Setup
As before, the model uses pixel-by-pixel calculations of absorbed photon dose, followed… Read More
Advancing Semiconductor Processes with Novel Extreme UV Photoresist Materials
Introduction
The ever-growing demand for faster, smaller, and more efficient electronic devices has fueled the semiconductor industry’s relentless pursuit of innovation. One crucial technology at the heart of semiconductor manufacturing is Extreme Ultraviolet Lithography (EUVL) to achieve smaller feature sizes… Read More
Modeling EUV Stochastic Defects with Secondary Electron Blur
Extreme ultraviolet (EUV) lithography is often represented as benefiting from the 13.5 nm wavelength (actually it is a range of wavelengths, mostly ~13.2-13.8 nm), when actually it works through the action of secondary electrons, electrons released by photoelectrons which are themselves released from ionization by absorbed… Read More
Enhanced Stochastic Imaging in High-NA EUV Lithography
High-NA EUV lithography is the anticipated new lithography technology to be introduced for the 2nm node. Essentially, it replaces the 0.33 numerical aperture of current EUV systems with a higher 0.55 numerical aperture (NA). This allows the projection of smaller spot sizes and smaller pitches, roughly 60% smaller compared … Read More
Application-Specific Lithography: Via Separation for 5nm and Beyond
With metal interconnect pitches shrinking in advanced technology nodes, the center-to-center (C2C) separations between vias are also expected to shrink. For a 5/4nm node minimum metal pitch of 28 nm, we should expect vias separated by 40 nm (Figure 1a). Projecting to 3nm, a metal pitch of 24 nm should lead us to expect vias separated… Read More
ASML Update SEMICON West 2023
At SEMICON West I had a chance to catch up with Mike Lercel of ASML. In this article I am going to combine ASML presentation material from the SPIE Advanced Lithography Conference, Mike’s SEMICON presentation, my discussions with Mike at SEMICON and a few items from ASML’s recent earnings call.
DUV
ASML continues to improve DUV systems.… Read More
NILS Enhancement with Higher Transmission Phase-Shift Masks
In the assessment of wafer lithography processes, normalized image log-slope (NILS) gives the % change in width for a given % change in dose [1,2]. A nominal NILS value of 2 indicates 10% change in linewidth for 10% change in dose; the % change in linewidth is inversely proportional to the NILS. In a previous article [2], it was shown… Read More
Assessing EUV Wafer Output: 2019-2022
At the 2023 SPIE Advanced Lithography and Patterning conference, ASML presented an update on its EUV lithography systems in the field [1]. The EUV wafer exposure output was presented and is shown below in table form:
From this information, we can attempt to extract and assess the EUV wafer output per quarter. First, since there … Read More
Micron- “The first cut isn’t the deepest”- Chops production & forecast further