An Invited Talk at IEDM: Intel’s Mr. Transistor Presents The Incredible Shrinking Transistor – Shattering Perceived Barriers and Forging Ahead

An Invited Talk at IEDM: Intel’s Mr. Transistor Presents The Incredible Shrinking Transistor – Shattering Perceived Barriers and Forging Ahead
by Mike Gianfagna on 12-16-2024 at 10:00 am

An Invited Talk at IDEM Intel’s Mr. Transistor Presents The Incredible Shrinking Transistor – Shattering Perceived Barriers and Forging Ahead

IEDM turned 70 last week. This was cause for much celebration in the form of special events. One such event was a special invited paper on Tuesday afternoon from Intel’s Tahir Ghani, or Mr. Transistor as he is known. Tahir has been driving innovation at Intel for a very long time. He is an eyewitness to the incredible impact of the Moore’s… Read More


Webinar: Advanced CMOS/FinFET Fabrication

Webinar: Advanced CMOS/FinFET Fabrication
by Admin on 07-23-2024 at 6:56 pm

Semiconductor and integrated circuit developments continue to proceed at an incredible pace. For example, today’s microprocessor chips have one thousand times the processing power of those a decade ago. These challenges have been accomplished because of the integrated circuit industry’s ability to track something… Read More


The TSMC OIP Backstory

The TSMC OIP Backstory
by Daniel Nenni on 09-18-2023 at 6:00 am

TSMC OIP 2023

This is the 15th anniversary of the TSMC Open Innovation Platform (OIP). The OIP Ecosystem Forum will kick off on September 27th in Santa Clara, California and continue around the world for the next two months in person and on-line in North America, Europe, China, Japan, Taiwan, and Israel. These are THE most attended semiconductor… Read More


WEBINAR: FinFET UltraPcell Methodology

WEBINAR: FinFET UltraPcell Methodology
by Daniel Nenni on 05-25-2023 at 6:00 am

ICMask PG Pcells JUNE Webinar

The custom physical implementation of circuit designs is a critical component of the integrated circuit (IC) process. Unfortunately, this step has been known to be one of the most time-consuming and prone to human error. Therefore, the need for a methodology that allows for faster, more accurate, and less error-prone work is … Read More


Gate Resistance in IC design flow

Gate Resistance in IC design flow
by Maxim Ershov on 05-03-2023 at 6:00 am

Figure1 9

MOSFET gate resistance is a very important parameter, determining many characteristics of MOSFETs and CMOS circuits, such as:

• Switching speed
• RC delay
• Fmax – maximum frequency of oscillations
• Gate (thermal) noise
• Series resistance and quality factor in MOS capacitors and varactors
• Switching speed and uniformity… Read More


IEDM 2022 – TSMC 3nm

IEDM 2022 – TSMC 3nm
by Scotten Jones on 01-02-2023 at 6:00 am

TSMC CPP

TSMC presented two papers on 3nm at the 2022 IEDM; “Critical Process features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond” and “A 3nm CMOS FinFlexTM Platform Technology with Enhanced Power Efficiency and Performance for Mobile SOC and High Performance Computing Applications”.

When … Read More


Achieving 400W Thermal Envelope for AI Datacenter SoCs

Achieving 400W Thermal Envelope for AI Datacenter SoCs
by Kalar Rajendiran on 12-05-2022 at 10:00 am

Alchip BlockDiagram Oct 26 2022 tsmc na oip presentation

Successful ASIC providers offer top-notch infrastructure and methodologies that can accommodate varied demands from a multitude of customers. Such ASIC providers also need access to best-in-class IP portfolio, advanced packaging and test capabilities, and heterogeneous chiplet integration capability among other things.… Read More


Samsung Versus TSMC Update 2022

Samsung Versus TSMC Update 2022
by Daniel Nenni on 12-02-2022 at 6:00 am

TSMC Versus Samsung

After attending the TSMC and Samsung foundry conferences I wanted to share some quick opinions about the foundry business. Nothing earth shattering but interesting just the same. Both conferences were well attended. If we are not back to the pre pandemic numbers we are very close to it.

TSMC and Samsung both acknowledged that there… Read More