I’ve written before about anti-fuse non-volatile memory, where the gate oxide is intentionally damaged in order to create a readable bit of data, but this is what most circuit designers never want to have happen to their logic gates. However, since the advent of MOS transistors the issue of Electrostatic Discharge (ESD) and the… Read More
Often we hear about isolated instances of excellence from various companies in the semiconductor industry which contribute significantly in building the overall ecosystem. While the individual excellence is essential, it’s rather more important how that excellence is utilized in a larger way by the industry to create a ‘value… Read More
ESD stands for electro-static discharge and deals with the fact that chips have to survive in an electrically hostile environment: people, testers, assembly equipment, shipping tubes. All of these can carry electric charge that has the “potential” (ho-ho) to damage the chip irreversibly. Historically this was… Read More
Electro Static Discharge (ESD) has been a major cause of failures in electronic devices. As the electronic devices have moved towards high density SoCs accommodating ever increasing number of gates at lower process nodes, their vulnerability to ESD effects has only increased. Among the reasons for ESD failures in SoCs, device… Read More
In a world with mobile and IoT devices driven by ultra-low power, high performance and small footprint transistors, FinFET based designs are ideal. FinFETs provide high current drive, low leakage and high device density. However, a FinFET transistor is more exposed to thermal issues, electro migration (EM), and electrostatic… Read More
As we move towards packing more and more functionalities and increasing densities of SoCs, the power, thermal and signal integrity issues keep on rising. 3D-IC is a great concept to stack multiple dies on top of each other vertically. While it brings lot of avenues to package dies with multiple functions together, it has challenges… Read More
I think by now there has been good level of discussion on FinFET technology at sub-20 nm process nodes and this is an answer to ultra dense, high performance, low power, and billion+ gate SoC designs within the same area. However, it comes with some of the key challenges with respect to power, noise and reliability of the design. A FinFET… Read More
In the modern semiconductor ecosystem we are seeing rapid advancement in technology breaking past once perceived limits; 28nm, 20nm, 16-14nm, 10nm and we are foreseeing 7nm now. Double and multi-patterning are already being seen along with complex FinFET structures in transistors to gain the ultimate advantages in PPA from… Read More
In this age of electronics, especially with so many different types of human held devices and more upcoming wearable devices, it’s utmost important to protect the massive circuitry inside those tiny parts in the devices from ESD related failures. The protection needs to happen at all stages – cells inside the chips, package… Read More
Back in the pre-SemiWiki days when I had the EdaGrafitti blog I wrote about the Carrington event. This was a solar storm in 1859 that lasted for several days. On September 1st there was a coronal mass ejection (CME) traveling directly towards earth. Normally such an event would take several days to reach earth but an earlier ejection… Read More
