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By Dr. Sabina Kuprėnaitė
Deep-ultraviolet optics used in semiconductor lithography may be exposed to billions of pulses over their service life. That creates a qualification challenge that initial reflectance specifications or laser-induced damage thresholds alone cannot answer.
A mirror may meet its optical specification… Read More
On May 25, Huawei semiconductor chief He Tingbo unveiled LogicFolding, an architecture intended to advance chip performance without relying on ever-smaller transistors. Presented alongside Huawei’s “Tau Scaling Law,” the approach prioritizes signal speed over transistor dimensions. It is a genuine engineering response… Read More
Extreme-ultraviolet lithography is essential for manufacturing advanced semiconductor devices, but its continued scaling presents a difficult materials problem. Photoresists must simultaneously provide high resolution, low exposure dose, limited line-edge or linewidth roughness, and extremely low defectivity. … Read More
ASML’s dominance was not born from a single invention. It emerged from four decades of systems engineering, supplier orchestration, and repeated bets on lithographic transitions that competitors judged too expensive. Founded in 1984 as a Philips–ASM joint venture, the Dutch company first differentiated itself with modular… Read More
Intel and TSMC are pursuing the same objective—manufacturing smaller, faster, and more energy-efficient semiconductors—but they have adopted different strategies for advanced lithography. Intel moved early to develop High-Numerical-Aperture Extreme Ultraviolet lithography, commonly called High-NA EUV, while TSMC… Read More
Yossi Meyouhas is the CEO of Xsight Labs. Yossi joined Xsight Labs in May 2021 as Chief Operating Officer. Prior to Xsight Labs, Yossi was SVP R&D in Valens Semiconductors (2017-2021), and before that served in multiple senior positions in Marvell Technology Group, the last being SVP Engineering and General Manager of Marvell
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Contrary to the popular press, ASML High-NA EUV is not ready for logic production yet—and it may never be, at least not in the form originally envisioned. If you remember how long it took conventional EUV to become production-worthy—arguably 5–10 years—this should not come as a surprise. More importantly, this is no longer just… Read More
The paper, Industrial Defectivity Prediction (IDP) V6: A Two-Layer Yield Cliff Framework for Cross-Industry Mass-Production Forecasting, presents a generalized industrial yield-modeling architecture that extends the classical Negative Binomial framework through a two-layer phenomenological structure designed … Read More
In the pursuit of advanced extreme ultraviolet (EUV) lithography for high-NA patterning, metal oxide resists (MORs) offer significant promise but face challenges like critical dimension (CD) variation due to atmospheric interactions. Presented at SPIE Advanced Lithography + Patterning 2025 by Kevin M. Dorney and colleagues… Read More
The imec installation of the ASML EXE:5200 High Numerical Aperture (High NA) extreme ultraviolet (EUV) lithography system at imec represents a pivotal advancement in semiconductor manufacturing and research. This system, installed in imec’s 300 mm cleanroom in Leuven, Belgium, introduces unprecedented lithographic resolution… Read More
Intel 18A-P Pushes RibbonFET and Backside Power Beyond the First Generation