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The previous post in this series provided an overview of FinFET devices. This article will briefly cover FinFET fabrication.
The major process steps in fabricating silicon fins are shown in Figures 1 through 3. The step that defines the fin thickness uses Sidewall Image Transfer (SIT). Low-pressure chemical vapor (isotropic)… Read More
This is the first of a multi-part series, to introduce FinFET technology to SemiWiki readers. These articles will highlight the technology’s key characteristics, and describe some of the advantages, disadvantages, and challenges associated with this transition. Topics in this series will include FinFET fabrication,… Read More
ASML High-NA EUV is Not Ready for High-Volume Production