SPIE Photomask Technology + Extreme Ultraviolet Lithography

SPIE Photomask Technology + Extreme Ultraviolet Lithography
by Admin on 06-21-2024 at 3:46 pm

Share your research and join the outstanding program for 2024

Make plans to join the premier worldwide technical meeting for photomasks, patterning, metrology, materials, inspection/repair, mask business, extreme UV lithography, and emerging technologies.

Present your research in Monterey. Present your research in Monterey,

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Report from SPIE- EUV’s next 15 years- AMAT “Sculpta” braggadocio rollout

Report from SPIE- EUV’s next 15 years- AMAT “Sculpta” braggadocio rollout
by Robert Maire on 03-06-2023 at 10:00 am

EUV DUV Lithography

-We attended the SPIE lithography Conference in San Jose
-No significant news or announcements on EUV
-Focus on 500WPM target and High & Hyper NA rollout
-AMAT overblown Sculpta-Not exactly what its cracked up to be

SPIE Lithography 2023

We have been attending SPIE for many years now and are happy to see a return to pre Covid levels… Read More


Double Diffraction in EUV Masks: Seeing Through The Illusion of Symmetry

Double Diffraction in EUV Masks: Seeing Through The Illusion of Symmetry
by Fred Chen on 05-22-2022 at 7:00 am

Double Diffraction in EUV Masks

At this year’s SPIE Advanced Lithography conference, changes to EUV masks were particularly highlighted, as a better understanding of their behavior is becoming clear. It’s now confirmed that a seemingly symmetric EUV mask absorber pattern does not produce a symmetric image at the wafer, as a conventional DUV … Read More


Has KLA lost its way?

Has KLA lost its way?
by Robert Maire on 05-01-2022 at 6:00 am

KLA SPIE 2022

-KLA has another great QTR in face of overwhelming demand
-Supply chain issues obliterated by backlog
-Longer term technology leadership concerns are increasing
-We see limited upside near term & remain cyclically cautious

Another great quarter- demand remains super strong

KLA’s performance remains great as does… Read More


SPIE 2017 ASML and Cadence EUV impact on place and route

SPIE 2017 ASML and Cadence EUV impact on place and route
by Scotten Jones on 04-13-2017 at 7:00 am

As feature sizes have shrunk, the semiconductor industry has moved from simple, single-exposure lithography solutions to increasingly complex resolution-enhancement techniques and multi-patterning. Where the design on a mask once matched the image that would be produced on the wafer, today the mask and resulting image … Read More


Heads Up! Photonics West is Just Around the Corner

Heads Up! Photonics West is Just Around the Corner
by Mitch Heins on 12-04-2016 at 4:00 pm

As I write about integrated photonics I continue to hear from long-time experts in the field who lament that integrated photonics has been around for decades and other than telecom/datacom, it seems to never be a mainstream technology. It’s hard to argue that this time around it will be different as those people have lived through… Read More


IMEC Technology Forum (ITF) – EUV When, Not If

IMEC Technology Forum (ITF) – EUV When, Not If
by Scotten Jones on 05-28-2016 at 7:00 am

For me personally EUV has been something of a roller coaster ride over the last several years. I started out a strong believer in EUV but then at the SPIE Advanced Lithography Conference in 2014 TSMC gave a very negative assessment of EUV, and there was a SEMATECH paper on high NA EUV that struck me as extremely unlikely to succeed. I … Read More


Extending EUV Lithography

Extending EUV Lithography
by Scotten Jones on 06-12-2015 at 1:00 pm

I have previously written about SPIE day 1 and 2 so I want to wrap up my coverage with some impressions from days 3 and 4. My single biggest take away from the conference is that EUV has made tremendous progress in the last 12 months. Last year the mood of the conference was in my opinion pessimistic with respect to EUV, this year the mood… Read More


Mapping Focus and Dose onto BEOL Fabrication Effects

Mapping Focus and Dose onto BEOL Fabrication Effects
by Tom Simon on 03-16-2015 at 7:00 pm

With today’s ArF based lithography using 193nm wavelength light, we are hard up against the limitations imposed by the Raleigh equation. Numerous clever things have been devised to maximize yield and reduce feature size. These include 2 beam lithography, multiple patterning, immersion litho processes to improve NA, thinner… Read More