System on chip (SoC) based design has long been recognized as a powerful method to offer product differentiation through higher performance and expanded functionality. Yet, it comes with a number of limitations, such as high cost of development. Also, SoCs are monolithic, which can inhibit rapid adaptation in the face of changing… Read More
Tag: samsung
Low Power High Performance PCIe SerDes IP for Samsung Silicon
No matter how impressive the specifications are for an SoC, the power performance and area of the finished design all depend on the IP selected for the IO blocks. In particular, most SOCs designed for consumer and enterprise applications rely heavily on PCI Express. Because PCIe analog IP is critical to design success, Samsung … Read More
CDC for MBIST: Who Knew?
Now and again, I enjoy circling back to a topic on which I spent a good deal of time back in my Atrenta days – clock domain crossing analysis (CDC). This is an area that still has opportunity to surprise me at least, in this case looking at CDC analysis around MBIST logic. CDC for MBIST might seem strange. Isn’t everything in test mode synchronous… Read More
Semiconductor CapEx too strong?
Semiconductor capital expenditures (CapEx) are on track for strong growth in 2021. For many companies the increase should continue into 2022. TSMC, the dominant foundry company, expects to spend $30 billion in CapEx in 2021, a 74% increase from 2020. TSMC announced in March it plans to invest $100 billion over the next three years,… Read More
IEDM 2021 – Back to in Person
Anyone who has read my previous articles about IEDM knows I consider it the premier conference on process technology.
Last year due to COVID IEDM was virtual and although virtual offers some advantages the hallway conversations that can be such an important part of the conference are lost. This year IEDM is returning as a live event… Read More
The Journey of DRAM Continues
The field of DRAM is fascinating as it continues to grow and innovate. For the past ten years, I have often read that DRAM is running out of steam because of its difficulty to scale the capacitor, and yet it continues to evolve since invented by Dr. R. Dennard at IBM. In 1966, he introduced the concept of a transistor memory cell consisting… Read More
Intel Accelerated
Intel presented yesterday on their plans for process technology and packaging over the next several years. This was the most detailed roadmap Intel has ever laid out. In this write up I will analyze Intel’s process announcement and how they match up with their competitors.
10nm Super Fin (SF)
10nm is now in volume production in three… Read More
VLSI Technology Symposium – Imec Alternate 3D NAND Word Line Materials
At the 2021 VLSI Technology Symposium, Imec presented on Ruthenium (Ru) and Molybdenum (Mo) as alternate Word Line (WL) materials for 3D NAND Flash “First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D NAND Memory Devices”. I had an opportunity to interview one of the authors: Maarten Rosmeulen.… Read More
TSMC and the FinFET Era!
While there is a lot of excitement around the semiconductor shortage narrative and the fabs all being full, both 200mm and 300mm, there is one big plot hole and that is the FinFET era.
Intel ushered in the FinFET era only to lose FinFET dominance to the foundries shortly thereafter. In 2009 Intel brought out a 22nm FinFET wafer at the… Read More
From Silicon To Systems
The annual Siemens Digital Industries Software user group event was held virtually on May 26th, which made it easy to attend from my home office, although selecting from the list of speakers was a challenge, because they offered 475 sessions, wow. My focus is EDA, so I listened to Joseph Sawicki, the Executive Vice President, IC … Read More