Synopsys Enhances PPA with Backside Routing

Synopsys Enhances PPA with Backside Routing
by Mike Gianfagna on 03-19-2024 at 6:00 am

Comparison of frontside and backside PDNs (Source IMEC)

Complexity and density conspire to make power delivery very difficult for advanced SoCs. Signal integrity, power integrity, reliability and heat can seem to present unsolvable problems when it comes to efficient power management. There is just not enough room to get it all done with the routing layers available on the top side… Read More


On-Chip Power Distribution Networks Get Help from Magwel’s RNi

On-Chip Power Distribution Networks Get Help from Magwel’s RNi
by Tom Simon on 02-02-2017 at 12:00 pm

Counting squares is a useful tool for calculating simple resistance in wires, but falls short in reality when wires deviate from ideal. Frequently the use of RC extraction tools for determining resistance in signal lines in digital designs can be effective and straightforward. However, there are classes of nets in designs that… Read More


DesignCon 2016 — signal integrity must be power-aware!

DesignCon 2016 — signal integrity must be power-aware!
by Tom Dillinger on 01-31-2016 at 6:00 pm

DesignCon is a unique conference — its tagline is “Where the Chip meets the Board”. Held each January in Santa Clara, the conference showcases a wealth of new technologies for advanced packaging, printed circuit board fabrication, connectors, cables, and related analysis equipment (e.g, BERT, VNA, scopes). Of specific… Read More


ANSYS Enters the League of 10nm Designs with TSMC

ANSYS Enters the League of 10nm Designs with TSMC
by Pawan Fangaria on 04-09-2015 at 7:00 pm

The way we are seeing technology progression these days is unprecedented. It’s just about six months ago, I had written about the intense collaboration between ANSYSand TSMCon the 16nm FinFET based design flow and TSMC certifying ANSYS tools for TSMC 16nm FF+ technology and also conferring ANSYS with “Partner of the Year” award.… Read More


Noise & Reliability of FinFET Designs – Success Stories!

Noise & Reliability of FinFET Designs – Success Stories!
by Pawan Fangaria on 11-01-2014 at 7:00 am

I think by now there has been good level of discussion on FinFET technology at sub-20 nm process nodes and this is an answer to ultra dense, high performance, low power, and billion+ gate SoC designs within the same area. However, it comes with some of the key challenges with respect to power, noise and reliability of the design. A FinFET… Read More


A Comprehensive Power Analysis Solution for SoC+Package

A Comprehensive Power Analysis Solution for SoC+Package
by Pawan Fangaria on 09-08-2014 at 4:00 pm

Since power has become a critical factor in semiconductor chip design, the stress is towards decreasing supply voltage to reduce power consumption. However, the threshold voltage to switch devices cannot go down beyond a certain limit and these results in an extremely narrow margin for noise between the two. And that gets further… Read More


A Collaborative Approach Yields Better PI for PCBs

A Collaborative Approach Yields Better PI for PCBs
by Pawan Fangaria on 05-18-2014 at 10:30 am

The power integrity (PI) of a system is an extremely important aspect to be looked at all levels – chip, package and PCB for overall reliability of the system. At the PCB level, a DC analysis, usually based on IR drop, must ensure that adequate DC voltage, satisfying all constraints of current density and temperature, is delivered… Read More


LSI’s Way of Faster & Reliable Electronic System Design

LSI’s Way of Faster & Reliable Electronic System Design
by Pawan Fangaria on 05-05-2014 at 9:30 am

LSI Corporationstarted in 1980s and I had several encounters with it during my jobs in 1990s; not to forget the LSI chips I used to see in desktops and other electronic systems, and I’m happy to see LSI continuing today with more vigour having leadership position in storage and networking space. It provides highly reliable, high … Read More


How to meet 3Ps in 3D-ICs with sub-20nm Dies?

How to meet 3Ps in 3D-ICs with sub-20nm Dies?
by Pawan Fangaria on 03-06-2014 at 1:30 am

It feels to be at the top of semiconductor technology by having dies with high density of semiconductor design at sub-20nm technology node stacked together into a 3D-IC to form a complete SoC which can accommodate billions of gates. However there are multiple factors to be looked at in order to make that successful amid often conflicting… Read More