As I have discussed before, I believe that IEDM is the premier technical conference for understanding leading edge process technologies. Beginning this coming weekend, this year’s edition of IEDM will be held virtually, and I highly recommend attending.
The conference held a press briefing last Monday. The tutorial and short… Read More
With the announcement of early PDK availability for the 3nm GAA process node, designers are extremely interested in the characteristics of the new “gate-all-around” transistor structure and how it compares to the existing FinFET device. The GAA transistor has been denoted as a (horizontal) nanowire or nanosheet.
I will talk… Read More
We live in an age of abundant information. There is a tremendous exchange of ideas crisscrossing the world enabling new innovative type of products to pop up daily. Therefore, in this era there is a greater need to understand competitive intelligence. Corporate companies today are interested in what other competitors are brewing… Read More
At IEDM in December I had a chance to interview Thomas Ernst about the paper “Performance and Design Considerations for Gate-All-around Stacked-NanoWires FETs” by Leti and STMicroelectonics.
Leti published the first stacked nanowire in 2006, it was very new then, now stacked nanowire/nanosheets are starting… Read More
‘Laughing Buddha’ is eternal, but for semiconductor industry, I must say it’s ‘laughing Moore’. Moore made a predictive hypothesis and the whole world is inclined to let that continue, eternally? When we were at 28nm, we weren’t hoping to go beyond 20/22nm; voices like ‘Moore’s law is dead’ started emerging. Today, we are already… Read More
